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Vishay General Semiconductor - Diodes Division VS-10ETF10S-M3
- Part No.:
- VS-10ETF10S-M3
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VS-10ETF10S-M3.pdf
- Description:
- DIODE GEN PURP 1KV 10A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
VS-10ETF10S-M3 from Vishay Semiconductors is a surface-mount fast soft recovery rectifier diode rated for 10 A average forward current and 1000 V peak reverse voltage, featuring 1.33 V forward voltage at 10 A and 80 ns reverse recovery time at 1 A/100 A/μs test conditions. It is used in high-efficiency output rectification and freewheeling circuits in inverters, choppers, and DC-DC converters operating under severe EMI constraints.
For engineers reviewing the VS-10ETF10S-M3 datasheet, VS-10ETF10S-M3 pinout, VS-10ETF10S-M3 application, or VS-10ETF10S-M3 equivalent, key selection considerations include its D2PAK (TO-263AB) package thermal resistance (RthJC = 1.5 °C/W), snap factor of 0.6 for controlled recovery, and compliance with JEDEC JESD47 and MSL level 1 reflow requirements up to 245 °C.
Technical Context
This diode employs a glass-passivated pellet chip junction optimized for simultaneous low forward voltage drop and short reverse recovery time. Its soft recovery behavior-quantified by a snap factor of 0.6-minimizes voltage overshoot and EMI generation during commutation in high-frequency switching topologies.
The device operates across -40 °C to +150 °C junction temperature range and delivers 155 A non-repetitive surge current capability with no voltage reapplied. Thermal performance is enabled by direct copper thermal pad contact in the D2PAK package, achieving 1.5 °C/W junction-to-case resistance under DC operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IF(AV) | 10 A - maximum average forward current at TC = 125 °C, enabling continuous power handling in compact heatsinked designs |
| VRRM | 1000 V - peak repetitive reverse voltage rating, suitable for 800 V DC bus applications with safety margin |
| VF @ 10 A, 25 °C | 1.33 V - low conduction loss supporting high-efficiency rectification in medium-power converters |
| trr @ 1 A, 100 A/μs | 80 ns - fast soft recovery time reducing switching losses and EMI in 20–100 kHz hard-switched topologies |
| RthJC | 1.5 °C/W - low junction-to-case thermal resistance enabling high power density mounting on PCB copper areas |
| IRM @ 150 °C | 4 mA - controlled leakage at max operating temperature, ensuring stable blocking in high-temp environments |
| Snap factor | 0.6 - quantified softness of reverse recovery, limiting di/dt-induced voltage spikes and RFI generation |
Pinout & Package
Package: D2PAK (TO-263AB), surface-mount with exposed thermal pad (pin 2). Dimensions per JEDEC outline TO-263AB: 10.67 mm × 9.65 mm × 4.83 mm (max), weight ≈ 2 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | Main current entry point; connects to high-side switching node or AC input in bridge configurations |
| 2 | Cathode / Thermal Pad | Primary current exit and thermal conduction path; must be soldered to ≥650 mm² copper area for rated IF(AV) |
| 3 | NC / Mechanical Support | No internal connection; structural support pin aligned with cathode tab for mechanical stability and coplanarity |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Ensures stable electrical parameters and long-term reliability under repeated thermal cycling from -40 °C to +150 °C |
| MSL Level 1 rating | Supports single-reflow assembly at peak 245 °C without moisture-induced damage or delamination |
| JEDEC JESD47 qualified | Validated for robustness in automotive and industrial applications requiring AEC-Q101-equivalent stress screening |
| Halogen-free, RoHS-compliant, Pb-free terminations | Meets global environmental compliance requirements including EU RoHS Directive 2011/65/EU and IEC 61249-2-21 |
| Low Qrr (1.05 μC) | Reduces stored charge loss during turn-off, improving efficiency in high-frequency synchronous rectifier auxiliary paths |
Applications
| Industrial Inverters | Switch-Mode Power Supplies |
|---|---|
Use Scenario: Output rectification in 3-phase motor drive inverters with 600–800 V DC link. IC Role / Device Role / Timing Role: Freewheeling diode clamping in IGBT half-bridge legs during inductive load commutation. Use Value: Soft recovery (snap factor 0.6) suppresses voltage ringing across IGBTs, reducing snubber losses and EMI filter size. |
Use Scenario: Secondary-side rectification in telecom and server PSUs operating at 100–300 kHz. IC Role / Device Role / Timing Role: High-current unidirectional conduction path with minimal conduction and switching loss trade-off. Use Value: 1.33 V VF and 80 ns trr enable >94% efficiency at 10 A output while meeting CISPR-22 Class B conducted EMI limits. |
| Renewable Energy Converters | Uninterruptible Power Supplies |
Use Scenario: DC-DC stage in solar microinverters interfacing 60–100 V PV strings to 400 V DC bus. IC Role / Device Role / Timing Role: Fast recovery path for energy transfer during high-frequency transformer reset cycles. Use Value: Low Qrr (1.05 μC) minimizes reverse recovery loss in phase-shifted full-bridge topologies, extending thermal headroom. |
Use Scenario: Battery charging and inverter output stage in line-interactive UPS systems with 200–500 VA rating. IC Role / Device Role / Timing Role: Bidirectional freewheeling element during battery-to-inverter and AC-to-battery transitions. Use Value: 155 A IFSM supports surge currents during battery short-circuit protection events without bond wire fusing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast soft recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH10R06DJF | 600 V VRRM, 10 A IF(AV), 65 ns trr, TO-220AC package, higher VF (1.55 V @ 10 A) | Limited to ≤600 V DC bus; requires through-hole mounting and heatsink interface | Select when lower trr is prioritized over voltage rating and board space is not constrained. |
| IXYS MBR10100CT | 100 V VRRM, dual common-cathode Schottky, 10 A per diode, VF = 0.75 V, no reverse recovery | Not suitable for 1000 V applications; only applicable in low-voltage secondary-side rectification | Choose only for <100 V systems where zero trr and ultra-low VF outweigh voltage limitations. |
Compared with STTH10R06DJF and MBR10100CT, the VS-10ETF10S-M3 uniquely balances 1000 V blocking, soft recovery (0.6 snap factor), and surface-mount D2PAK thermal performance-making it the only option among the three qualified for high-voltage, high-frequency, and high-reliability industrial converter designs.
Availability
VS-10ETF10S-M3 is available at Aetrix Electronics and suitable for industrial inverters, renewable energy converters, uninterruptible power supplies, and high-efficiency switch-mode power supplies requiring stable component supply and long-lifecycle support.
Supply support for VS-10ETF10S-M3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, specializing in high-reliability power devices for industrial, automotive, and computing markets.
The VS-10ETF10S-M3 belongs to Vishay's fast soft recovery rectifier family, engineered specifically for EMI-sensitive high-frequency power conversion where controlled reverse recovery and thermal robustness are critical.
FAQ
What is the maximum junction temperature rating for the VS-10ETF10S-M3?
The VS-10ETF10S-M3 has a maximum junction temperature (TJ max.) of +150 °C, validated per JEDEC JESD47 qualification. This allows reliable operation in high-ambient environments such as enclosed industrial drives or sealed UPS enclosures, provided thermal design maintains case temperature ≤125 °C at 10 A DC load.
Does the VS-10ETF10S-M3 have a halogen-free and RoHS-compliant construction?
Yes, the VS-10ETF10S-M3 is explicitly specified as halogen-free, RoHS-compliant, and lead (Pb)-free, per its "-M3" suffix designation. It meets EU RoHS Directive 2011/65/EU and IEC 61249-2-21, with material declarations available in Vishay's compliance documentation (Doc. #99912).
What is the reverse recovery time (trr) test condition for the VS-10ETF10S-M3?
The VS-10ETF10S-M3 specifies trr = 80 ns under test conditions of 1 A forward current, 100 A/μs di/dt, and TJ = 25 °C. Additional data shows trr = 310 ns at 10 A IFM and 25 A/μs di/dt-critical for evaluating performance in high-current, moderate-dI/dt applications like motor drive freewheeling.
Can the VS-10ETF10S-M3 be used in place of the VS-10ETF12S-M3?
No-the VS-10ETF10S-M3 is rated for 1000 V VRRM, while the VS-10ETF12S-M3 is rated for 1200 V. Substituting the VS-10ETF10S-M3 in a 1200 V design violates voltage derating guidelines and risks premature breakdown. They share identical package, thermal, and recovery characteristics but differ solely in blocking voltage rating.
What is the thermal resistance from junction to ambient (RthJA) for the VS-10ETF10S-M3?
The VS-10ETF10S-M3 has RthJA = 62 °C/W when mounted on a 1" square (650 mm²) FR-4 PCB with 4 oz. copper, per Note (1) in the datasheet. This value assumes optimal thermal pad soldering; actual RthJA will vary significantly with PCB layout, copper area, and airflow-so junction temperature must be verified in final system conditions.
VS-10ETF10S-M3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1000 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.33 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 310 ns
- Current - Reverse Leakage @ Vr:
- 100 µA @ 1000 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -40°C ~ 150°C
VS-10ETF10S-M3 FAQ
1.How can I place an order for VS-10ETF10S-M3 through Aetrix?
Please submit a Request for Quotation (RFQ) for VS-10ETF10S-M3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VS-10ETF10S-M3 reliable?
The price and inventory of VS-10ETF10S-M3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VS-10ETF10S-M3 is usually 5 days.
3.What payment methods are accepted for VS-10ETF10S-M3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VS-10ETF10S-M3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VS-10ETF10S-M3?
VS-10ETF10S-M3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VS-10ETF10S-M3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VS-10ETF10S-M3?
For technical support, including VS-10ETF10S-M3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VS-10ETF10S-M3 requirements.
6.How does Aetrix verify that VS-10ETF10S-M3 is sourced from the original manufacturer or authorized distributors?
All VS-10ETF10S-M3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VS-10ETF10S-M3 meets industry standards.
7.What is the process for return or replacement of VS-10ETF10S-M3?
All VS-10ETF10S-M3 units undergo pre-shipment inspection (PSI). If there is an issue with VS-10ETF10S-M3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VS-10ETF10S-M3 part is unused and in its original packaging.
Return procedure for VS-10ETF10S-M3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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