Vishay General Semiconductor - Diodes Division VS-3EYH02-M3/I

Overview

VS-3EYH02-M3/I from Vishay Semiconductors is a hyperfast recovery silicon rectifier diode in SlimSMAW (DO-221AD) package, rated for 200 V peak reverse voltage, 3 A average forward current, and 16 ns typical reverse recovery time at 125 °C - optimized for high-frequency DC/DC converters and PFC stages in industrial power supplies.

For engineers reviewing the VS-3EYH02-M3/I datasheet, VS-3EYH02-M3/I pinout, VS-3EYH02-M3/I application, or VS-3EYH02-M3/I equivalent, key selection criteria include trr ≤ 30 ns at 125 °C, VF ≤ 0.79 V at 3 A/150 °C, RthJM ≤ 15 °C/W, and compatibility with automated SMT placement on FR4 PCBs with 2 oz copper.

Technical Context

This device belongs to Vishay's FRED Pt® eSMP® series and employs a planar-diffused hyperfast recovery structure enabling low Qrr (23–60 nC), minimal stored charge, and stable switching performance across -55 °C to +175 °C junction temperature range. Its low VF and ultra-fast trr support high-efficiency, high-density power conversion topologies.

The SlimSMAW (DO-221AD) package features matte tin-plated leads compliant with J-STD-002, MSL Level 1 per J-STD-020 (260 °C peak reflow), and UL 94 V-0 molding compound - enabling reliable thermal transfer to the PCB mount pad without heatsink dependency.

Key Specifications

Pinout & Package

Package: SlimSMAW (DO-221AD), surface-mount, low-profile (max height 1.10 mm), cathode denoted by color band. Mounting pad layout per Vishay Doc. #96582.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar hyperfast rectifier applications.

Compared with VS-3EYH02HM3 (same die, different reel size) and NRVB3200M3T5G (slower, higher VF), the VS-3EYH02-M3/I delivers superior high-frequency efficiency and thermal performance in space-constrained, high-reliability power designs - especially where trr < 22 ns and RthJM ≤ 15 °C/W are critical.

Availability

VS-3EYH02-M3/I is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, active PFC stages, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and traceable halogen-free sourcing.

Supply support for VS-3EYH02-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global semiconductor manufacturer specializing in discrete components, sensors, and passive elements, with leadership in power rectifiers, MOSFETs, and precision resistors.

The VS-3EYH02-M3/I belongs to Vishay's FRED Pt® eSMP® hyperfast rectifier product line, engineered specifically for high-efficiency, high-frequency power conversion in industrial, computing, and automotive systems where low Qrr and tight thermal resistance are essential.

FAQ

What is the maximum junction temperature rating for the VS-3EYH02-M3/I?

The VS-3EYH02-M3/I has a maximum junction temperature (TJ max.) of +175 °C, validated per JEDEC specifications and supported by its SlimSMAW package construction. This rating enables operation in harsh thermal environments such as enclosed power modules or automotive under-hood applications. The device maintains specified electrical performance up to this limit, with VF and trr values characterized at 150 °C and 125 °C respectively. Thermal design must ensure RthJM ≤ 15 °C/W to avoid exceeding TJ max. under full load.

Does the VS-3EYH02-M3/I have a halogen-free and RoHS-compliant construction?

Yes, the VS-3EYH02-M3/I carries the M3 suffix, confirming it is halogen-free, RoHS-compliant, and features lead (Pb)-free matte tin-plated terminations solderable per J-STD-002. Its molding compound meets UL 94 V-0 flammability rating, and the entire construction complies with Vishay's material categorization standard (Doc. #99912). This makes the VS-3EYH02-M3/I suitable for green manufacturing and export-regulated markets without compromise to reliability or thermal performance.

What is the reverse recovery time (trr) of the VS-3EYH02-M3/I under real-world operating conditions?

The VS-3EYH02-M3/I exhibits a typical reverse recovery time (trr) of 16 ns at TJ = 25 °C, dIF/dt = 100 A/μs, and VR = 30 V. At elevated temperature (TJ = 125 °C), trr increases to 30 ns under the same test conditions. In actual DC/DC converter operation with dIF/dt ≈ 200 A/μs and VR = 100 V, trr remains ≤18 ns at 25 °C and ≤30 ns at 125 °C - values confirmed in Vishay Doc. #96515, Fig. 7. These figures directly impact switching loss and EMI profile.

How does the VS-3EYH02-M3/I differ from the VS-3EYH01-M3/I?

The VS-3EYH02-M3/I and VS-3EYH01-M3/I share identical package (SlimSMAW), forward characteristics (IF(AV) = 3 A, VF ≈ 0.71 V @ 150 °C), and thermal specs (RthJM = 12–15 °C/W), but differ in peak reverse voltage: VS-3EYH02-M3/I is rated for 200 V VRRM, while VS-3EYH01-M3/I is rated for 100 V. Their part markings (3H2 vs. 3H1) and breakdown voltage testing (VBR = 200 V vs. 100 V at IR = 100 μA) are distinct. System-level voltage margin requirements determine selection - VS-3EYH02-M3/I is mandatory for 200 V bus or 150 V nominal systems with transient overvoltage.

Is the VS-3EYH02-M3/I suitable for automated SMT assembly?

Yes, the VS-3EYH02-M3/I is explicitly designed for automated placement: its SlimSMAW (DO-221AD) package has low profile (1.10 mm max height), coplanar matte tin leads, and MSL Level 1 rating (260 °C peak reflow per J-STD-020). The 13" tape-and-reel packaging (I suffix) supports high-throughput pick-and-place machines. Vishay confirms compatibility with standard SMT processes including stencil printing, reflow profiling, and AOI inspection - no special tooling or process adjustments are required for the VS-3EYH02-M3/I.