Vishay General Semiconductor - Diodes Division VS-8EWS10SPBF
- Part No.:
- VS-8EWS10SPBF
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
VS-8EWS10SPBF.pdf
- Description:
- DIODE GEN PURP 1KV 8A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:6,682
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Product details
Overview
VS-8EWS10SPBF from Vishay Semiconductors is a surface-mount fast soft recovery rectifier diode rated for 8 A average forward current and 1000 V peak reverse voltage, with 1.3 V forward voltage at 8 A and 80 ns reverse recovery time at 1 A/100 A/μs. It features glass-passivated junction, DPAK (TO-252AA) package, and is optimized for EMI-sensitive output rectification in DC-DC converters and motor drive freewheeling paths.
For engineers reviewing the VS-8EWS10SPBF datasheet, VS-8EWS10SPBF pinout, VS-8EWS10SPBF application, or VS-8EWS10SPBF equivalent, key selection criteria include soft recovery behavior (snap factor = 0.6), thermal resistance (RthJC = 2.5 °C/W), low leakage (4 mA at 150 °C), and compliance with MSL Level 1 reflow profile (260 °C peak).
Technical Context
This diode employs a soft-recovery silicon structure engineered to minimize voltage overshoot and EMI generation during reverse recovery, achieved via controlled carrier lifetime and tailored doping profiles. Its trr of 80 ns (at 1 A, 100 A/μs) and Qrr of 1 μC (at 25 °C) reflect balanced speed and softness-critical for high-frequency switching in industrial inverters and UPS systems.
The DPAK package enables direct PCB heat sinking through its exposed cathode tab, supporting continuous 8 A operation at TC = 96 °C. Thermal performance is defined by RthJC = 2.5 °C/W (DC), and the device operates across -40 to +150 °C junction temperature range with stable VF(TO) = 0.93 V threshold voltage.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IF(AV) | 8 A - Sustained DC or sinusoidal half-wave conduction at TC = 96 °C without derating |
| VRRM | 1000 V - Maximum repetitive peak reverse voltage; defines safe blocking capability in HV DC bus applications |
| VF @ 8 A | 1.3 V - Forward drop at rated current; determines conduction loss (10.4 W typical at full load) |
| trr | 80 ns - Reverse recovery time under 1 A, 100 A/μs conditions; enables <100 kHz hard-switched topologies |
| Snap factor | 0.6 - Ratio of peak reverse recovery current to di/dt-induced current; quantifies softness for EMI control |
| RthJC | 2.5 °C/W - Junction-to-case thermal resistance; allows direct heatsinking to PCB copper area ≥650 mm² |
| TJ max. | +150 °C - Maximum junction temperature; supports operation in sealed industrial enclosures |
Pinout & Package
DPAK (TO-252AA) package with exposed cathode tab for thermal management and mechanical anchoring. Three-terminal single-diode configuration: anode and cathode pins plus integrated thermal pad (cathode-connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode) | Anode connection | Input terminal for forward conduction; connects to switched/high-side node in buck/flyback outputs |
| 2 (Cathode) | Cathode connection | Output terminal; electrically tied to exposed thermal pad for low-inductance, low-resistance heat path |
| 3 (Thermal Pad) | Cathode thermal interface | Exposed copper area on underside; must be soldered to ≥650 mm² FR-4 copper pour for rated IF(AV) performance |
Key Features
| Feature | Design Value |
|---|---|
| Glass passivated junction | Ensures long-term reliability under thermal cycling and humidity exposure per J-STD-020 MSL Level 1 |
| Soft recovery profile | Snap factor of 0.6 reduces dv/dt-induced EMI and eliminates snubber requirements in many 48–400 V systems |
| Low Qrr (1 μC) | Minimizes stored charge loss during turn-off, improving efficiency in high-frequency synchronous rectifier auxiliary paths |
| Halogen-free & RoHS-compliant | -M3 suffix confirms lead-free terminations, halogen-free molding compound, and full compliance with EU directives |
| High IFSM (150 A) | Withstands 10 ms non-repetitive surge events-critical for motor startup and inverter short-circuit protection |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
Use Scenario: Freewheeling path in 3-phase IGBT inverter legs driving HVAC compressors or conveyor motors. IC Role / Device Role / Timing Role: Unidirectional current clamp during IGBT turn-off; recirculates inductive energy with minimal voltage spike. Use Value: Soft recovery (trr = 80 ns, S = 0.6) prevents IGBT overvoltage failure and eliminates need for RC snubbers. | Use Scenario: Output rectification in high-efficiency double-conversion online UPS systems with 400 V DC bus. IC Role / Device Role / Timing Role: Primary DC output diode in phase-shifted full-bridge secondary; handles 8 A continuous load with low conduction loss. Use Value: 1.3 V VF at 8 A limits power dissipation to ≤10.4 W, enabling compact heatsink design in space-constrained rack units. |
| Solar Microinverters | EV On-Board Chargers (OBC) |
Use Scenario: DC link clamping and auxiliary rectification in transformerless microinverter power stages. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode in interleaved boost converters; manages high di/dt transients up to 100 A/μs. Use Value: Low Qrr (1 μC) and soft snap factor reduce EMI emissions below CISPR-32 Class B limits without added filtering. | Use Scenario: Secondary-side rectification in LLC resonant converter of 3.3–6.6 kW OBC modules. IC Role / Device Role / Timing Role: High-voltage output diode handling 1000 V reverse stress during resonance zero-crossings. Use Value: 1000 V VRRM rating provides 2× margin over 400 V battery system transients, ensuring long-term reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast soft recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VSKY10100D-M3 | Same DPAK package, 1000 V VRRM, but trr = 75 ns and Qrr = 0.85 μC; slightly faster but less soft (S = 0.55) | Better suited for higher-frequency (>150 kHz) PFC stages where speed outweighs EMI concerns | Select when prioritizing minimal reverse recovery loss over EMI suppression |
| STTH8L06D | DPAK package, 600 V VRRM, trr = 65 ns, Qrr = 0.7 μC; lower voltage rating and tighter softness control (S = 0.5) | Limited to 200–400 V DC bus applications; not suitable for 1000 V industrial inverters | Choose only for cost-sensitive 600 V designs where 1000 V margin is unnecessary |
Compared with VSKY10100D-M3 and STTH8L06D, VS-8EWS10SPBF delivers optimal balance of 1000 V blocking, 80 ns soft recovery, and 4 mA leakage at 150 °C-making it the preferred choice for EMI-critical 8 A, 1000 V freewheeling and output rectification where thermal robustness and regulatory compliance are mandatory.
Availability
VS-8EWS10SPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, solar microinverters, and EV on-board chargers requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for VS-8EWS10SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for industrial, automotive, and computing markets.
The VS-8EWS10SPBF belongs to Vishay's Soft Recovery Series, designed specifically for high-efficiency, low-EMI power conversion in inverters, choppers, and DC-DC converters where fast yet controlled reverse recovery is essential.
FAQ
What is the maximum junction temperature rating for VS-8EWS10SPBF?
The VS-8EWS10SPBF has a maximum junction temperature (TJ) of +150 °C, verified per absolute maximum ratings in the Vishay datasheet (Document Number: 93377). This rating enables reliable operation in sealed industrial enclosures and high-ambient environments. Derating begins above TC = 96 °C, and the device maintains specified trr and VF performance across the full -40 to +150 °C range. The VS-8EWS10SPBF thermal design must ensure RthJC = 2.5 °C/W is maintained via proper PCB copper area.
Does VS-8EWS10SPBF support lead-free reflow assembly?
Yes, VS-8EWS10SPBF is qualified for lead-free reflow per J-STD-020 MSL Level 1, with a maximum peak temperature of 260 °C. The -M3 suffix explicitly denotes halogen-free, RoHS-compliant construction with lead-free terminations and compliant molding compound. No special prebake or moisture sensitivity handling is required prior to assembly. The VS-8EWS10SPBF DPAK footprint aligns with Vishay's recommended AN-994 layout for optimal thermal and mechanical reliability.
How does the snap factor of VS-8EWS10SPBF affect EMI performance?
The VS-8EWS10SPBF has a measured snap factor of 0.6, indicating highly controlled reverse recovery with minimal current tail and suppressed peak reverse current (Irr). This directly reduces high-frequency dv/dt noise and conducted EMI-especially critical in inverters and UPS systems subject to CISPR-32 limits. Unlike standard fast recovery diodes, the VS-8EWS10SPBF's soft recovery avoids sharp current collapse, eliminating the need for snubbers in many 48–400 V applications. This characteristic is confirmed in the recovery waveforms of the VS-8EWS10SPBF datasheet Figure 12.
What is the reverse leakage current of VS-8EWS10SPBF at elevated temperature?
At TJ = 150 °C and rated VRRM = 1000 V, the VS-8EWS10SPBF exhibits a maximum reverse leakage current (IRM) of 4 mA, as specified in the Electrical Specifications table (Document Number: 93377, page 2). This value is critical for high-temperature hold-off applications such as DC link clamping in motor drives. At 25 °C, leakage is ≤0.1 mA. The VS-8EWS10SPBF's stable leakage ensures predictable blocking behavior across its full operating temperature range.
Is VS-8EWS10SPBF pin-compatible with other DPAK fast recovery diodes?
VS-8EWS10SPBF uses the standard DPAK (TO-252AA) outline with 3-terminal configuration (anode, cathode, thermal pad), matching JEDEC MO-246. It shares identical pinout and footprint with industry-standard DPAK rectifiers like STTH8L06D and VSKY10100D-M3. However, pin compatibility does not guarantee functional equivalence-VS-8EWS10SPBF's 1000 V rating, 80 ns trr, and 0.6 snap factor differ meaningfully from those alternatives. Always verify electrical and thermal specs before substitution. The VS-8EWS10SPBF marking "8EWS10S" appears on the case per Vishay document 95176.
VS-8EWS10SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1000 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 8 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 50 µA @ 1000 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
- Operating Temperature - Junction:
- -55°C ~ 150°C
VS-8EWS10SPBF FAQ
1.How can I place an order for VS-8EWS10SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for VS-8EWS10SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VS-8EWS10SPBF reliable?
The price and inventory of VS-8EWS10SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VS-8EWS10SPBF is usually 5 days.
3.What payment methods are accepted for VS-8EWS10SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VS-8EWS10SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VS-8EWS10SPBF?
VS-8EWS10SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VS-8EWS10SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VS-8EWS10SPBF?
For technical support, including VS-8EWS10SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VS-8EWS10SPBF requirements.
6.How does Aetrix verify that VS-8EWS10SPBF is sourced from the original manufacturer or authorized distributors?
All VS-8EWS10SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VS-8EWS10SPBF meets industry standards.
7.What is the process for return or replacement of VS-8EWS10SPBF?
All VS-8EWS10SPBF units undergo pre-shipment inspection (PSI). If there is an issue with VS-8EWS10SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VS-8EWS10SPBF part is unused and in its original packaging.
Return procedure for VS-8EWS10SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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