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Vishay General Semiconductor - Diodes Division VS-HFA08TB60S-M3
- Part No.:
- VS-HFA08TB60S-M3
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
VS-HFA08TB60S-M3.pdf
- Description:
- DIODE GEN PURP 600V 8A TO263AB
- Quantity:
- Payment:
- Shipping:
Inventory:16,478
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Product details
Overview
VS-HFA08TB60S-M3 from Vishay Semiconductors is an ultrafast soft-recovery diode optimized for high-frequency switching in IGBT/MOSFET companion roles, with 600 V blocking voltage, 8 A average forward current, 1.4 V forward voltage at 8 A, 18 ns typical reverse recovery time (trr), and D2PAK (TO-263AB) surface-mount package - widely deployed as PFC boost diodes in industrial power supplies.
For engineers reviewing the VS-HFA08TB60S-M3 datasheet, VS-HFA08TB60S-M3 pinout, VS-HFA08TB60S-M3 application, or VS-HFA08TB60S-M3 equivalent, key selection criteria include ultra-low Qrr (65–138 nC), soft recovery behavior (no snap-off), low RthJC (3.5 K/W), and halogen-free RoHS-compliant construction - critical for EMI-sensitive, thermally constrained, and high-efficiency converter designs.
Technical Context
This HEXFRED® diode employs epitaxial silicon construction with electron irradiation (process designator "A") to achieve ultrafast and ultrasoft reverse recovery, minimizing dI(rec)M/dt (240 A/μs typ. at 25 °C) and peak IRRM (3.5–5.0 A at 25 °C). Its recovery waveform avoids hard switching transitions, eliminating voltage spikes during tb.
Rated for TJ up to 150 °C and specified across operating conditions (not just 25 °C), it delivers stable VF (1.4 V typ. at 8 A, 125 °C) and low IRM (<500 µA at 125 °C, 480 V), enabling reliable operation in motor drives and inverters where thermal cycling and dynamic stress are severe.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VR (Blocking Voltage) | 600 V - supports 400 VAC input PFC stages with ≥1.5× safety margin against transients |
| IF(AV) (Avg. Forward Current) | 8 A at TC = 100 °C - enables compact heatsinking in continuous conduction mode (CCM) PFC |
| VFM (Forward Voltage) | 1.4 V typ. at IF = 8 A, TJ = 125 °C - reduces conduction loss vs. standard FRDs by ~15–20% |
| trr (Reverse Recovery Time) | 18 ns typ. at IF = 1 A, dIF/dt = 200 A/μs - allows >500 kHz switching without excessive diode-induced losses |
| Qrr (Reverse Recovery Charge) | 65 nC typ. at TJ = 25 °C - lowers switching loss in both diode and switching transistor, easing snubber design |
| RthJC (Junction-to-Case) | 3.5 K/W - supports direct thermal pad mounting to PCB copper pour or heatsink for <40 °C junction rise at 8 W dissipation |
| Package | D2PAK (TO-263AB) - surface-mount outline with exposed thermal pad, JEDEC-compliant, 9.65 mm × 10.67 mm footprint |
Pinout & Package
D2PAK (TO-263AB) package with 3 terminals: Pin 1 (Anode), Pin 2 (Cathode), Pin 3 (Thermal Pad / Base - electrically isolated, connected to cathode internally per Vishay marking diagram and mechanical drawing doc #96164).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | Input terminal for forward conduction; connects to switching node (e.g., IGBT collector or MOSFET drain) |
| 2 | Cathode | Output terminal for forward conduction; ties to DC bus (+) in boost PFC or inverter output stage |
| 3 (Base) | Thermal Pad / Cathode Tie | Exposed copper pad on underside - must be soldered to large PCB copper area for thermal management; electrically tied to cathode (Pin 2) |
Key Features
| Feature | Design Value |
|---|---|
| Ultrafast & ultrasoft recovery | No snap-off behavior during tb portion; smooth current decay reduces EMI generation and eliminates need for RC snubbers |
| Low Qrr and IRRM | Qrr = 65 nC (typ.), IRRM = 3.5 A (typ.) at 25 °C - cuts switching loss in both diode and switching device by >30% vs. standard fast diodes |
| Specified at operating conditions | All key parameters (VF, trr, Qrr, IRM) guaranteed at TJ = 125 °C - ensures performance predictability under real thermal load |
| Halogen-free, RoHS, Pb-free | M3 suffix confirms compliance with environmental standards without compromising thermal or electrical performance |
| UL 94 V-0 molding compound | Flame-retardant encapsulation meets safety requirements for enclosed industrial power systems |
Applications
| Industrial PFC Boost Stage | Inverter Output Freewheeling |
|---|---|
|
Use Scenario: Active PFC stage in 3–5 kW industrial AC-DC power supplies operating at 100–300 kHz. IC Role / Device Role / Timing Role: Ultrafast boost rectifier conducting during MOSFET off-time; recovers before next switching cycle. Use Value: Low Qrr and soft recovery reduce total system losses by 0.5–1.2%, enabling higher efficiency (>96%) and smaller heatsinks. |
Use Scenario: Freewheeling path in 3-phase IGBT-based motor drives (e.g., HVAC compressors, servo amplifiers). IC Role / Device Role / Timing Role: Anti-parallel diode providing inductive current path during IGBT commutation. Use Value: 18 ns trr and absence of voltage overshoot prevent IGBT overvoltage failure and eliminate need for clamping circuits. |
| Solar Microinverter DC-Link | UPS Inverter Stage |
|
Use Scenario: High-frequency DC-AC inversion in residential solar microinverters (210–250 VDC input, 50/60 Hz output). IC Role / Device Role / Timing Role: Synchronous rectification assist diode in H-bridge leg, handling bidirectional reactive current. Use Value: Low VF (1.4 V) and soft recovery minimize conduction + switching loss, extending battery runtime and reducing thermal derating. |
Use Scenario: Double-conversion online UPS with high-efficiency inverter stage (1–10 kVA range). IC Role / Device Role / Timing Role: Output rectifier in high-frequency transformer-isolated inverter section. Use Value: 150 °C max TJ rating and 3.5 K/W RthJC allow sustained 8 A operation without forced air, simplifying thermal design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast soft-recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06DJF | Same 600 V / 8 A rating; trr = 25 ns (typ.), Qrr = 90 nC (typ.) - slower recovery and higher charge than VS-HFA08TB60S-M3 | Higher EMI in high-dI/dt PFC; may require larger snubber in >200 kHz designs | Preferred where cost sensitivity outweighs EMI or efficiency targets; not drop-in due to higher VF (1.55 V) and different thermal pad layout |
| IXYS MUR860E | 600 V / 8 A; trr = 35 ns (typ.), Qrr = 140 nC (typ.) - significantly slower and no soft recovery; exhibits snap-off | Requires external snubbing in IGBT freewheeling; unsuitable for >150 kHz PFC | Valid alternative only in lower-frequency (<100 kHz), non-EMI-critical applications; TO-220 package requires through-hole layout change |
Compared with STTH8R06DJF and IXYS MUR860E, the VS-HFA08TB60S-M3 delivers superior high-frequency performance via its 18 ns trr, soft recovery, and 3.5 K/W thermal resistance - making it the optimal choice for thermally dense, EMI-sensitive, and efficiency-driven PFC and inverter designs where layout and thermal constraints are tight.
Availability
VS-HFA08TB60S-M3 is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, and solar inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for VS-HFA08TB60S-M3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for power, signal, and sensing applications.
The HEXFRED® product line was engineered specifically for high-efficiency, high-frequency power conversion - targeting PFC, inverter, and motor drive systems where soft recovery, low Qrr, and thermal robustness are essential.
FAQ
What is the maximum junction temperature rating for the VS-HFA08TB60S-M3?
The VS-HFA08TB60S-M3 has a maximum junction temperature (TJ max.) of +150 °C, validated across all electrical specifications including VF, trr, and Qrr. This rating enables reliable operation in sealed industrial enclosures and high-ambient environments when mounted with adequate PCB copper area or heatsinking per the D2PAK thermal pad guidelines.
Is the VS-HFA08TB60S-M3 pin-compatible with standard D2PAK diodes like the MUR860E?
No - while both use the D2PAK (TO-263AB) outline, the VS-HFA08TB60S-M3 features a cathode-tied thermal pad (Pin 3), whereas the MUR860E uses TO-220 packaging. Even among D2PAK diodes, pin assignments differ: VS-HFA08TB60S-M3 assigns Pin 1 = Anode, Pin 2 = Cathode, Pin 3 = Cathode-connected thermal pad; always verify layout against Vishay doc #96164 before substitution.
Does the VS-HFA08TB60S-M3 require a heatsink in a 8 A continuous application?
At 8 A average forward current and TJ ≤ 150 °C, the VS-HFA08TB60S-M3 dissipates ~11.2 W (8 A × 1.4 V). With RthJC = 3.5 K/W and typical RthCA ≈ 40 K/W on 4-layer PCB, junction rise exceeds safe limits without thermal enhancement. A minimum 10 cm² 2-oz copper pour under the thermal pad is required; external heatsink recommended for ambient >60 °C or derated operation.
What does the "-M3" suffix indicate in VS-HFA08TB60S-M3?
The "-M3" suffix certifies that the VS-HFA08TB60S-M3 is halogen-free, RoHS-compliant, and features lead (Pb)-free terminations - fully aligned with JEDEC J-STD-020 and IPC-1752 standards. It does not denote tape-and-reel packaging; the base part VS-HFA08TB60S-M3 ships in antistatic plastic tubes (50 pcs), distinct from the "-R" or "-L" reel variants.
Can the VS-HFA08TB60S-M3 replace the VS-HFA08TB60SR-M3 in a design?
Yes - the VS-HFA08TB60S-M3 and VS-HFA08TB60SR-M3 share identical die, electrical specs, thermal performance, and D2PAK package. The only difference is packaging: tube vs. 13" tape-and-reel. Electrical functionality, pinout, and reliability data are fully interchangeable; board layout and soldering process remain unchanged.
VS-HFA08TB60S-M3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- HEXFRED®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 2.1 V @ 16 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 55 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
- Operating Temperature - Junction:
- -55°C ~ 150°C
VS-HFA08TB60S-M3 FAQ
1.How can I place an order for VS-HFA08TB60S-M3 through Aetrix?
Please submit a Request for Quotation (RFQ) for VS-HFA08TB60S-M3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VS-HFA08TB60S-M3 reliable?
The price and inventory of VS-HFA08TB60S-M3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VS-HFA08TB60S-M3 is usually 5 days.
3.What payment methods are accepted for VS-HFA08TB60S-M3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VS-HFA08TB60S-M3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VS-HFA08TB60S-M3?
VS-HFA08TB60S-M3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VS-HFA08TB60S-M3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VS-HFA08TB60S-M3?
For technical support, including VS-HFA08TB60S-M3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VS-HFA08TB60S-M3 requirements.
6.How does Aetrix verify that VS-HFA08TB60S-M3 is sourced from the original manufacturer or authorized distributors?
All VS-HFA08TB60S-M3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VS-HFA08TB60S-M3 meets industry standards.
7.What is the process for return or replacement of VS-HFA08TB60S-M3?
All VS-HFA08TB60S-M3 units undergo pre-shipment inspection (PSI). If there is an issue with VS-HFA08TB60S-M3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VS-HFA08TB60S-M3 part is unused and in its original packaging.
Return procedure for VS-HFA08TB60S-M3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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