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Vishay General Semiconductor - Diodes Division VS-MURB820-1HM3
- Part No.:
- VS-MURB820-1HM3
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
VS-MURB820-1HM3.pdf
- Description:
- DIODE GEN PURP 200V 8A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:3,063
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Product details
Overview
VS-MURB820-1HM3 from Vishay Semiconductors is an AEC-Q101 qualified ultrafast recovery rectifier in TO-262AA package, rated for 200 V reverse voltage and 8 A average forward current, with 35 ns reverse recovery time and 0.75 V forward voltage at 8 A and 150 °C - deployed as output rectifier in automotive-grade DC/DC converters and freewheeling diode in motor chopper drives.
For engineers reviewing the VS-MURB820-1HM3 datasheet, VS-MURB820-1HM3 pinout, VS-MURB820-1HM3 application, or VS-MURB820-1HM3 equivalent, key selection criteria include its 175 °C junction temperature rating, platinum-doped lifetime control for stable trr across temperature, MSL Level 1 moisture sensitivity, and TO-262AA mechanical compatibility with high-power thermal management requirements.
Technical Context
This device implements a planar silicon structure with platinum diffusion for precise carrier lifetime control, enabling consistent ultrafast recovery (trr ≤ 35 ns at 25 °C, ≤ 34 ns at 125 °C) and low stored charge (Qrr = 23 nC typ. at 25 °C). Its single-diode configuration supports unidirectional conduction in hard-switched topologies.
Thermal design is enabled by RthJC = 3.0 °C/W and a 175 °C max junction temperature, with TO-262AA mounting optimized for direct heatsink contact via the metal base. The device meets JESD-201 Class 1A thin whisker test and UL 94 V-0 molding compound requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - blocks up to 200 V repetitive reverse voltage without breakdown, suitable for 12–48 V system outputs with margin. |
| IF(AV) | 8 A at TC = 150 °C - delivers continuous DC output current in compact power stages with active thermal management. |
| VF @ 8 A / 150 °C | 0.75 V typ. - reduces forward conduction loss to ~6 W per device, critical for efficiency in high-current SMPS. |
| trr | 35 ns max. at IF = 1.0 A, dIF/dt = 50 A/μs - minimizes switching loss and EMI generation during turn-off in 100–500 kHz converters. |
| TJ max. | 175 °C - enables operation in under-hood automotive environments and sealed industrial enclosures without derating. |
| RthJC | 3.0 °C/W - allows direct thermal path to heatsink; 24 W dissipation raises case temp only 72 °C above ambient. |
| AEC-Q101 | Qualified - certified for automotive powertrain and chassis applications requiring zero-failure reliability over lifetime. |
Pinout & Package
Package: TO-262AA (3-lead, isolated tab), JEDEC-compliant outline with matte tin-plated leads, UL 94 V-0 molding compound, and flat metal base for direct heatsink mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode | Main current entry point; electrically isolated from tab; connects to switching node in buck/flyback secondary. |
| 2 | Cathode | Main current exit point; bonded to metal base/tab; requires low-inductance PCB trace to output capacitor. |
| 3 | Anode | Second anode terminal - confirms dual-die construction (two parallel 4 A dies); used for redundancy or current sharing. |
Key Features
| Feature | Design Value |
|---|---|
| Platinum-doped lifetime control | Stabilizes trr and Qrr across -55 °C to +175 °C, eliminating thermal runaway risk in automotive transients. |
| 175 °C TJ max | Enables placement near hot components (e.g., MOSFETs, inductors) without external cooling in space-constrained modules. |
| MSL Level 1 (260 °C peak) | Supports standard lead-free reflow without baking or special handling - reduces manufacturing cost and yield risk. |
| Low IR (250 μA max @ 150 °C) | Maintains blocking integrity in high-temp standby modes, preventing leakage-induced bus droop in always-on systems. |
| JESD-201 Class 1A whisker test | Validates long-term interconnect reliability in vibration-prone automotive applications (e.g., EPS, ADAS ECUs). |
Applications
| Automotive DC/DC Converter Output Rectification | Industrial Motor Chopper Freewheeling Diode |
|---|---|
|
Use Scenario: 12 V → 5 V/3.3 V step-down converter in engine control unit (ECU), operating continuously at 85 °C ambient. IC Role / Device Role / Timing Role: Primary output rectifier conducting 8 A DC, turning off within 35 ns during 300 kHz PWM cycles. Use Value: Low VF (0.75 V) cuts conduction loss by 22 % vs. legacy FRDs; AEC-Q101 ensures 15-year field reliability. |
Use Scenario: 24 V BLDC motor drive with IGBT-based half-bridge, where back-EMF induces reverse current during PWM off-time. IC Role / Device Role / Timing Role: Freewheeling path for inductive kickback; clamps voltage spikes with <35 ns recovery to limit snubber stress. Use Value: Qrr = 23 nC (25 °C) reduces diode-induced switching loss in IGBT gate driver stage by >30 % vs. standard fast recovery diodes. |
| UPS Battery Charging Stage | Server PSU Secondary-Side Rectification |
|
Use Scenario: Online UPS charging circuit converting 380 V AC to 48 V DC battery bank, operating at 60 °C ambient with 100 % duty cycle. IC Role / Device Role / Timing Role: Unidirectional current path from rectified AC to battery; handles surge currents up to 100 A IFSM. Use Value: 175 °C TJ rating allows full 8 A output without derating; TO-262AA base enables bolt-down heatsinking for 24/7 operation. |
Use Scenario: 48 V input server PSU delivering 100 A at 12 V using multiphase synchronous rectification architecture. IC Role / Device Role / Timing Role: Standby or auxiliary rectifier in OR-ing or hold-up circuits; operates at <10 % duty cycle but must survive 150 °C junction temp. Use Value: RthJC = 3.0 °C/W enables thermal coupling to shared heatsink; halogen-free M3 termination complies with IPC-1752A reporting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R06DJF | 600 V VRRM, 8 A IF(AV), trr = 45 ns, TO-220AC package, no AEC-Q101 qualification | Higher voltage headroom but slower recovery; lacks automotive qualification and thermal performance (RthJC = 4.5 °C/W) | Select when >200 V blocking is required and automotive compliance is not mandated. |
| IXYS MUR820E | 200 V VRRM, 8 A IF(AV), trr = 30 ns, TO-220AB package, AEC-Q101 qualified, but RthJC = 4.0 °C/W | Faster trr but higher thermal resistance; TO-220AB limits heatsink interface area vs. TO-262AA's full-base contact | Prefer when minimal trr is prioritized over thermal density; verify heatsink interface pressure for 175 °C operation. |
Compared with STTH8R06DJF and IXYS MUR820E, the VS-MURB820-1HM3 uniquely balances AEC-Q101 compliance, 3.0 °C/W thermal resistance, and 35 ns trr in a TO-262AA package - making it optimal for space- and thermally constrained automotive power modules where both reliability and thermal density are non-negotiable.
Availability
VS-MURB820-1HM3 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drives, and telecom UPS systems requiring stable component supply, long-lifecycle support, and AEC-Q101 assurance.
Supply support for VS-MURB820-1HM3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Semiconductors is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The MURB series targets high-efficiency, high-temperature power conversion - engineered specifically for output rectification and freewheeling in next-generation automotive and industrial SMPS where ultrafast recovery and ruggedness are mandatory.
FAQ
What is the maximum junction temperature rating for VS-MURB820-1HM3?
The VS-MURB820-1HM3 has a maximum junction temperature (TJ max.) of 175 °C, verified per absolute maximum ratings in Vishay Document 95902. This rating enables reliable operation in under-hood automotive environments and sealed industrial enclosures. The device maintains specified electrical performance up to this temperature, with VF dropping to 0.75 V typ. at 8 A and 150 °C. Thermal design must ensure TJ does not exceed 175 °C under worst-case power dissipation and ambient conditions.
Is VS-MURB820-1HM3 pin-compatible with VS-MURB820HM3?
No, VS-MURB820-1HM3 is not pin-compatible with VS-MURB820HM3. VS-MURB820-1HM3 uses the TO-262AA package with three leads (Anode–Cathode–Anode) and a metal base that serves as cathode connection, while VS-MURB820HM3 uses D2PAK (TO-263AB) with different lead spacing, thermal pad layout, and mechanical footprint. PCB layouts, heatsink interfaces, and solder stencil designs must be revised when substituting between these variants.
Does VS-MURB820-1HM3 meet automotive qualification standards?
Yes, VS-MURB820-1HM3 is AEC-Q101 qualified and meets JESD-201 Class 1A thin whisker test requirements, as confirmed in Vishay Document 95902. It is rated for automotive powertrain and chassis applications, including engine control units, ADAS power supplies, and EPS systems. The device also complies with MSL Level 1 per J-STD-020 and features halogen-free, RoHS-compliant, lead (Pb)-free terminations (M3 suffix).
What is the reverse recovery time (trr) specification for VS-MURB820-1HM3 at elevated temperature?
At TJ = 125 °C, the VS-MURB820-1HM3 exhibits a reverse recovery time (trr) of 34 ns max. under test conditions of IF = 8 A, dIF/dt = 200 A/μs, and VR = 160 V - per Dynamic Recovery Characteristics table in Vishay Document 95902. This value is higher than the 20 ns typ. at 25 °C, reflecting expected temperature-dependent carrier lifetime behavior. Designers must account for this increase when calculating switching losses in high-temperature operation.
How is thermal resistance defined for VS-MURB820-1HM3, and what does RthJC = 3.0 °C/W mean in practice?
RthJC = 3.0 °C/W for VS-MURB820-1HM3 is the thermal resistance from junction to case, measured with the metal base fully contacting a flat, smooth, greased heatsink. In practice, this means that dissipating 10 W of power will raise the junction temperature 30 °C above the case temperature. Combined with TJ max. = 175 °C and typical case temperatures ≤ 100 °C in well-designed mounts, the device supports sustained 8 A operation without exceeding thermal limits.
VS-MURB820-1HM3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- FRED Pt®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 975 mV @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 35 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 200 V
- Capacitance @ Vr, F:
- -
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
- Operating Temperature - Junction:
- -55°C ~ 175°C
VS-MURB820-1HM3 FAQ
1.How can I place an order for VS-MURB820-1HM3 through Aetrix?
Please submit a Request for Quotation (RFQ) for VS-MURB820-1HM3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VS-MURB820-1HM3 reliable?
The price and inventory of VS-MURB820-1HM3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VS-MURB820-1HM3 is usually 5 days.
3.What payment methods are accepted for VS-MURB820-1HM3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VS-MURB820-1HM3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VS-MURB820-1HM3?
VS-MURB820-1HM3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VS-MURB820-1HM3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VS-MURB820-1HM3?
For technical support, including VS-MURB820-1HM3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VS-MURB820-1HM3 requirements.
6.How does Aetrix verify that VS-MURB820-1HM3 is sourced from the original manufacturer or authorized distributors?
All VS-MURB820-1HM3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VS-MURB820-1HM3 meets industry standards.
7.What is the process for return or replacement of VS-MURB820-1HM3?
All VS-MURB820-1HM3 units undergo pre-shipment inspection (PSI). If there is an issue with VS-MURB820-1HM3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VS-MURB820-1HM3 part is unused and in its original packaging.
Return procedure for VS-MURB820-1HM3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VS-MURB820-1HM3 Tags
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