Vishay General Semiconductor - Diodes Division VSS8D2M6HM3/I

Overview

VSS8D2M6HM3/I from Vishay General Semiconductor is a surface-mount Trench MOS Barrier Schottky (TMBS®) rectifier in SlimSMAW (DO-221AD) package, rated for 60 V repetitive peak reverse voltage, 2 A average forward current, and 60 A surge capability, with 0.46 V forward voltage at 2 A and 125 °C junction temperature-used for polarity protection and freewheeling in automotive DC/DC converters.

For engineers reviewing the VSS8D2M6HM3/I datasheet, VSS8D2M6HM3/I pinout, VSS8D2M6HM3/I application, or VSS8D2M6HM3/I equivalent, key selection criteria include its AEC-Q101 qualification, low VF at high temperature, 175 °C max junction rating, and SlimSMAW thermal performance in space-constrained power stages.

Technical Context

This device implements a single-diode TMBS® structure using trench MOS barrier technology to achieve lower forward voltage and higher temperature operation than planar Schottky diodes. Its 0.46 V VF at 2 A/125 °C and 175 °C TJ(max) enable high-efficiency operation in thermally demanding automotive and industrial power supplies.

The SlimSMAW (DO-221AD) package provides enhanced thermal resistance (RθJM = 12 °C/W typical) and meets MSL level 1 per J-STD-020 with 260 °C peak reflow. The cathode band marking and matte tin-plated terminals ensure reliable assembly and polarity identification.

Key Specifications

Pinout & Package

Package: SlimSMAW (DO-221AD), low-profile surface-mount case with cathode band marking; compatible with SOD-128 footprint but optimized for improved thermal performance and higher current density.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VSS8D2M6HM3/I, the VSS8D2M6-M3/I offers identical performance without automotive qualification, while SS26HE3_A/H trades lower cost for higher VF and inferior thermal performance-making VSS8D2M6HM3/I optimal where AEC-Q101, low VF at temperature, and compact thermal design are critical.

Availability

VSS8D2M6HM3/I is available at Aetrix Electronics and suitable for automotive power management, industrial DC/DC converters, and commercial polarity protection requiring stable component supply and long-term lifecycle support.

Supply support for VSS8D2M6HM3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability and application-specific performance.

The VSS8D2M6 series belongs to Vishay's TMBS® rectifier product line, engineered to deliver superior forward voltage and high-temperature operation for next-generation automotive and industrial power conversion.

FAQ

What is the maximum junction temperature rating for VSS8D2M6HM3/I?

The VSS8D2M6HM3/I has a maximum junction temperature (TJ max.) of +175 °C, enabling reliable operation in high-ambient environments such as engine compartments or enclosed industrial power supplies. This rating is validated per AEC-Q101 stress testing and supported by its TMBS® trench structure, which maintains low forward voltage even at elevated temperatures. Thermal design must ensure junction-to-ambient temperature rise stays within RθJA limits under actual load conditions.

Is VSS8D2M6HM3/I qualified for automotive applications?

Yes, VSS8D2M6HM3/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HM3" and documentation (Document Number 87441). It meets rigorous stress tests for temperature cycling, humidity, and mechanical shock required for automotive power electronics. This qualification applies specifically to the HM3 variant-standard M3 versions like VSS8D2M6-M3/I are not AEC-Q101 certified.

What package type does VSS8D2M6HM3/I use, and how does it differ from SMA?

VSS8D2M6HM3/I uses the SlimSMAW (DO-221AD) package-a low-profile variant of DO-221AD with reduced height and optimized thermal path. Unlike standard SMA (DO-214AC), SlimSMAW offers lower RθJM (12 °C/W typical) and fits tighter board spacing. Its mounting pad layout and mechanical dimensions are defined in Vishay's package outline drawing, and it is compatible with SOD-128 footprint standards but delivers superior thermal performance.

What is the forward voltage of VSS8D2M6HM3/I at 2 A and 125 °C?

The forward voltage of VSS8D2M6HM3/I is specified as 0.46 V (max) at IF = 2 A and TA = 125 °C, per Vishay's Electrical Characteristics table. This value reflects real-world conduction loss under hot operating conditions and is significantly lower than conventional Schottky diodes, directly contributing to higher efficiency in thermally stressed applications such as automotive DC/DC converters.

Does VSS8D2M6HM3/I have a cathode marking, and how is polarity identified?

Yes, VSS8D2M6HM3/I features a visible cathode band on the body of the SlimSMAW package, located at the cathode end. This marking aligns with JEDEC-standard polarity identification and ensures correct orientation during automated placement and manual inspection. The anode is the unmarked end, and terminals are matte tin-plated for solderability per J-STD-002 and JESD 22-B102.