My Inquiry
My Account
Vishay General Semiconductor - Diodes Division VSS8D5M12-M3/I
~~2-Bottom-View.jpg)
- Part No.:
- VSS8D5M12-M3/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Single Diodes
- Package:
- DO-221AC, SMA Flat Leads
- Datasheet:
-
VSS8D5M12-M3/I.pdf
- Description:
- DIODE SCHOTT 100V 2.2A SLIMSMAW
- Quantity:
- Payment:
- Shipping:
Inventory:3,067
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
VSS8D5M12-M3/I from Vishay General Semiconductor is a surface-mount Trench MOS Barrier Schottky (TMBS®) rectifier in SlimSMAW (DO-221AD) package, rated for 120 V repetitive peak reverse voltage, 5 A average forward current, and 100 A non-repetitive surge. It delivers low forward voltage drop of 0.64 V at 5 A and 125 °C, enabling high-efficiency DC/DC conversion in automotive and industrial power supplies.
For engineers reviewing the VSS8D5M12-M3/I datasheet, VSS8D5M12-M3/I pinout, VSS8D5M12-M3/I application, or VSS8D5M12-M3/I equivalent, key selection criteria include its AEC-Q101-qualified HM3 variant option, 175 °C maximum junction temperature, MSL Level 1 moisture sensitivity, and compatibility with SOD-128 footprint layouts for thermal and space-constrained designs.
Technical Context
This TMBS® rectifier uses trench-based MOS barrier technology to achieve lower forward voltage and reduced reverse recovery charge compared to planar Schottky diodes. Its single-anode/cathode configuration supports unidirectional conduction in freewheeling and polarity protection circuits.
The SlimSMAW (DO-221AD) package provides enhanced thermal performance via low RθJM (10–12 °C/W) and optimized copper pad mounting per JEDEC 51-14, enabling reliable operation up to 175 °C junction temperature in high-density PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 120 V - Withstands peak reverse voltage in 48 V and 60 V bus systems without breakdown |
| IF(AV) | 5 A - Supports continuous output current in compact DC/DC converters with minimal heatsinking |
| VF @ 5 A, 125 °C | 0.64 V - Minimizes conduction loss and improves system efficiency at elevated temperatures |
| IFSM | 100 A - Handles short-circuit and startup surge currents in automotive load-dump scenarios |
| TJ max. | 175 °C - Enables operation in under-hood automotive environments and industrial enclosures |
| RθJA | 120–150 °C/W - Defines thermal derating on FR4 PCBs; requires ≥30 mm × 30 mm copper pad for full rating |
| CJ @ 4 V | 460 pF - Limits high-frequency switching noise and EMI in MHz-range converters |
Pinout & Package
Package: SlimSMAW (DO-221AD), low-profile surface-mount case with matte tin-plated leads, MSL Level 1, halogen-free and RoHS-compliant. Cathode identified by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Input terminal for forward conduction path | Connected to input rail or switch node; accepts up to 100 A surge current |
| Cathode | Output terminal for forward conduction path | Connected to output rail or ground return; marked with color band; serves as thermal interface to PCB pad |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOS Barrier Schottky structure | Reduces VF by ~15 % vs. planar Schottky at 5 A/125 °C, lowering power loss in high-temp operation |
| AEC-Q101 qualification (HM3 variant) | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
| MSL Level 1, 260 °C peak reflow | Enables standard lead-free SMT assembly without pre-baking or special handling |
| UL 94 V-0 molding compound | Meets flammability safety requirements for industrial and transportation end equipment |
| Junction-to-mount thermal resistance | RθJM = 10–12 °C/W - Enables efficient heat transfer to metal-core or thick-copper PCBs |
Applications
| Automotive DC/DC Converters | Industrial Motor Drive Freewheeling |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in EV/HEV power architectures. IC Role / Device Role / Timing Role: Output rectifier in synchronous or asynchronous buck converter stage. Use Value: 0.64 V VF at 125 °C reduces conduction loss by >0.3 W vs. legacy Schottky, improving thermal margin in sealed enclosures. | Use Scenario: Clamp and recirculate inductive energy during IGBT turn-off in HVAC and pump inverters. IC Role / Device Role / Timing Role: Freewheeling diode across motor phase windings. Use Value: 100 A IFSM withstands repeated inductive kickback events without degradation at 175 °C junction temperature. |
| Commercial Server Power Supplies | Polarity Protection in Telecom Equipment |
Use Scenario: Secondary-side rectification in high-frequency LLC resonant converters for 48 V server racks. IC Role / Device Role / Timing Role: High-efficiency output rectifier replacing Si fast recovery diodes. Use Value: 460 pF junction capacitance minimizes switching loss and EMI generation at 500 kHz–1 MHz operation. | Use Scenario: Reverse-voltage blocking at DC input ports of 48 V telecom line cards and base station modules. IC Role / Device Role / Timing Role: Unidirectional current gate preventing damage from miswired power connections. Use Value: 120 V VRRM provides 2.5× safety margin over nominal 48 V input, ensuring robust field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VSS8D5M12HM3/I | AEC-Q101 qualified; identical electrical specs and package; differs only in qualification status and marking | Required for automotive production; not needed for commercial/industrial use | Select VSS8D5M12HM3/I when automotive qualification is mandated; otherwise VSS8D5M12-M3/I suffices |
| SS5P12HM3_A/H | Same 120 V/5 A rating but in SMA package (DO-214AC); higher VF (0.72 V @ 5 A, 125 °C); RθJA ≈ 180 °C/W | Limited to lower-power or less thermally constrained applications due to inferior thermal performance | Use only if SlimSMAW footprint is unavailable; expect ~15 % higher conduction loss and greater thermal derating |
Compared with VSS8D5M12-M3/I, the HM3 variant adds automotive qualification without altering electrical behavior, while SS5P12HM3_A/H offers functional equivalence in a larger, thermally inferior package-making VSS8D5M12-M3/I optimal for space- and efficiency-critical 48–60 V systems.
Availability
VSS8D5M12-M3/I is available at Aetrix Electronics and suitable for automotive DC/DC converters, industrial motor drive freewheeling, and telecom polarity protection requiring stable component supply and long-term manufacturability.
Supply support for VSS8D5M12-M3/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and MOSFETs for demanding power applications.
The VSS8D5M12-M3/I belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) product line, engineered to deliver ultra-low VF and high-temperature stability for next-generation power conversion in automotive and industrial systems.
FAQ
What is the maximum junction temperature rating for VSS8D5M12-M3/I?
The VSS8D5M12-M3/I has a maximum junction temperature (TJ max.) of +175 °C, verified per JEDEC test conditions and supported by thermal characterization data in the official Vishay datasheet (Document Number: 87447). This rating enables reliable operation in under-hood automotive environments and sealed industrial enclosures where ambient temperatures exceed 125 °C. The VSS8D5M12-M3/I maintains specified electrical performance up to this limit when mounted on appropriate copper pads.
Is VSS8D5M12-M3/I AEC-Q101 qualified?
No, VSS8D5M12-M3/I is not AEC-Q101 qualified. The AEC-Q101-qualified version is designated VSS8D5M12HM3/I, which shares identical electrical and thermal specifications but includes additional automotive reliability testing. The "HM3" suffix explicitly denotes AEC-Q101 compliance, while "M3" alone indicates commercial/industrial grade. Engineers must select VSS8D5M12HM3/I for automotive production programs requiring qualification evidence.
What is the forward voltage of VSS8D5M12-M3/I at 5 A and 125 °C?
The forward voltage (VF) of VSS8D5M12-M3/I is 0.64 V at 5 A and 125 °C, as specified in the Electrical Characteristics table of the Vishay datasheet (Document Number: 87447). This value is a maximum under those exact test conditions and reflects the device's low-loss TMBS® architecture. At room temperature (25 °C), VF is 0.81 V (typical) and 0.89 V (max) at 5 A, confirming strong temperature coefficient behavior beneficial for thermal stability.
Which package outline does VSS8D5M12-M3/I use, and is it compatible with SOD-128 footprints?
VSS8D5M12-M3/I uses the SlimSMAW (DO-221AD) package, which is mechanically compatible with SOD-128 case outlines per Vishay's documentation. Its dimensions (e.g., 4.00 mm × 2.70 mm body size) and terminal layout match SOD-128 land patterns, enabling drop-in replacement in existing designs. However, thermal performance exceeds standard SOD-128 due to optimized internal construction and lower RθJM (10–12 °C/W).
What is the reverse leakage current of VSS8D5M12-M3/I at 120 V and 125 °C?
The reverse leakage current (IR) of VSS8D5M12-M3/I is 1.6 mA maximum at VR = 120 V and TA = 125 °C, as stated in the Electrical Characteristics table (Document Number: 87447). This value is measured under steady-state conditions and reflects the TMBS® structure's superior high-temperature blocking capability versus conventional Schottky diodes. At 25 °C and 120 V, IR is ≤0.35 mA, demonstrating predictable thermal drift.
VSS8D5M12-M3/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- eSMP®, TMBS®
- Package/Case:
- DO-221AC, SMA Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 2.2A
- Voltage - Forward (Vf) (Max) @ If:
- 620 mV @ 2.5 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 350 µA @ 120 V
- Capacitance @ Vr, F:
- 460pF @ 4V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SlimSMAW (DO-221AD)
- Operating Temperature - Junction:
- -40°C ~ 175°C
VSS8D5M12-M3/I FAQ
1.How can I place an order for VSS8D5M12-M3/I through Aetrix?
Please submit a Request for Quotation (RFQ) for VSS8D5M12-M3/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VSS8D5M12-M3/I reliable?
The price and inventory of VSS8D5M12-M3/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VSS8D5M12-M3/I is usually 5 days.
3.What payment methods are accepted for VSS8D5M12-M3/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VSS8D5M12-M3/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VSS8D5M12-M3/I?
VSS8D5M12-M3/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VSS8D5M12-M3/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VSS8D5M12-M3/I?
For technical support, including VSS8D5M12-M3/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VSS8D5M12-M3/I requirements.
6.How does Aetrix verify that VSS8D5M12-M3/I is sourced from the original manufacturer or authorized distributors?
All VSS8D5M12-M3/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VSS8D5M12-M3/I meets industry standards.
7.What is the process for return or replacement of VSS8D5M12-M3/I?
All VSS8D5M12-M3/I units undergo pre-shipment inspection (PSI). If there is an issue with VSS8D5M12-M3/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VSS8D5M12-M3/I part is unused and in its original packaging.
Return procedure for VSS8D5M12-M3/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
VSS8D5M12-M3/I Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
