Vishay General Semiconductor - Diodes Division VSS8D5M15-M3/H

Overview

VSS8D5M15-M3/H from Vishay General Semiconductor is a surface-mount Trench MOS Barrier Schottky (TMBS®) rectifier in SlimSMAW (DO-221AD) package, rated for 150 V repetitive peak reverse voltage, 5 A average forward current, and 100 A non-repetitive surge. It operates up to 175 °C junction temperature and delivers 0.68 V forward voltage at 5 A and 125 °C - optimized for high-frequency DC/DC converters and automotive polarity protection.

For engineers reviewing the VSS8D5M15-M3/H datasheet, VSS8D5M15-M3/H pinout, VSS8D5M15-M3/H application, or VSS8D5M15-M3/H equivalent, key selection criteria include its low VF at elevated temperature, AEC-Q101 qualification (via HM3 variant), MSL Level 1 solderability, and thermal resistance of 120 °C/W (junction-to-ambient on FR4).

Technical Context

This TMBS® rectifier uses trench MOS barrier technology to achieve lower forward voltage and higher temperature capability than conventional planar Schottky diodes. Its single-anode/cathode configuration supports unidirectional conduction with low reverse leakage (≤0.18 mA at 150 V, 25 °C) and 300 pF junction capacitance at 4.0 V.

The SlimSMAW (DO-221AD) package enables high power density with a low-profile footprint and matte tin-plated leads compliant to J-STD-002 and JESD 22-B102. Thermal performance is characterized per JEDEC 51-2A (R_θJA) and JEDEC 51-14 (R_θJM), supporting reliable operation under pulsed and continuous loads.

Key Specifications

Pinout & Package

Package: SlimSMAW (DO-221AD) - low-profile, surface-mount case with cathode band marking; compatible with SOD-128 outline but dimensionally distinct (5.00 mm × 3.60 mm × 1.10 mm max height); UL 94 V-0 molding compound; halogen-free and RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VSS8D5M15-M3/H, the HM3 variant adds formal AEC-Q101 validation without electrical trade-offs, while SS5P15L-M3/84A offers similar form-factor and ratings but lacks automotive qualification and has marginally higher forward voltage - impacting thermal design in high-power-density applications.

Availability

VSS8D5M15-M3/H is available at Aetrix Electronics and suitable for high-frequency inverters, DC/DC converters, and automotive polarity protection requiring stable component supply across industrial, commercial, and Tier-1 automotive programs.

Supply support for VSS8D5M15-M3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The VSS8D5M15-M3/H belongs to Vishay's TMBS® (Trench MOS Barrier Schottky) rectifier family, engineered to replace conventional Schottky and fast recovery diodes in high-efficiency, high-temperature power conversion applications.

FAQ

What is the maximum junction temperature rating for the VSS8D5M15-M3/H?

The VSS8D5M15-M3/H has a maximum junction temperature (T_J) of +175 °C, enabling operation in demanding thermal environments such as automotive under-hood locations and sealed industrial power supplies. This rating is validated per JEDEC standards and supported by its 120 °C/W R_θJA on FR4 with recommended copper pad layout. The VSS8D5M15-M3/H must be thermally managed to ensure dP_D/dT_J remains below 1/R_θJA.

Is the VSS8D5M15-M3/H AEC-Q101 qualified?

No - the VSS8D5M15-M3/H is not AEC-Q101 qualified. The automotive-qualified version is the VSS8D5M15HM3/H, which shares identical electrical and thermal specifications but carries formal AEC-Q101 certification. The "HM3" suffix explicitly denotes this qualification. For automotive production, VSS8D5M15HM3/H must be specified; VSS8D5M15-M3/H is intended for commercial and industrial applications.

What does the "-M3/H" suffix indicate in VSS8D5M15-M3/H?

The "-M3" suffix indicates halogen-free, RoHS-compliant construction with matte tin-plated leads meeting J-STD-002 and JESD 22-B102 solderability standards. The "/H" denotes packaging in 7-inch plastic tape-and-reel format with 3500 units per reel. This ordering code confirms compliance with environmental regulations and specifies logistics configuration - critical for automated SMT placement and traceability in high-volume manufacturing of the VSS8D5M15-M3/H.

How does the VSS8D5M15-M3/H compare to standard Schottky rectifiers in terms of forward voltage?

The VSS8D5M15-M3/H delivers 0.68 V forward voltage at 5 A and 125 °C - significantly lower than typical planar Schottky diodes (often >0.85 V under same conditions). This reduction stems from its Trench MOS Barrier Schottky (TMBS®) structure, which improves carrier injection efficiency and thermal stability. Lower V_F directly reduces conduction loss and junction heating, making the VSS8D5M15-M3/H especially advantageous in high-current, high-temperature DC/DC outputs.

What is the thermal resistance junction-to-ambient (R_θJA) for the VSS8D5M15-M3/H?

The VSS8D5M15-M3/H has a typical R_θJA of 120 °C/W when mounted on a standard FR4 PCB per JEDEC 51-2A test method, using the recommended 30 mm × 30 mm copper pad area. Maximum R_θJA is 150 °C/W. This value defines the thermal derating curve: for example, at 25 °C ambient, maximum continuous I_F(AV) is 5 A, but drops to ~2 A at 100 °C ambient. Proper heatsinking or enhanced copper area is required to maintain safe T_J in the VSS8D5M15-M3/H.