Winbond Electronics Corporation W25M02GVSFJR
- Part No.:
- W25M02GVSFJR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
W25M02GVSFJR.pdf
- Description:
- IC FLASH 2GBIT SPI/QUAD 16SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:3,332
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W25M02GVSFJR from Winbond is a 2 G-bit (2 × 1 G-bit) Serial SLC NAND Flash MCP with dual/quad SPI interface, supporting concurrent die operations and continuous read mode for code shadowing. It integrates two W25N01GV dies in a single 16-pin SOIC 300-mil package (package code SF), operates from 2.7–3.6 V, delivers up to 50 MB/s continuous data transfer, and features on-chip 1-bit ECC and hardware/software write protection.
For engineers reviewing the W25M02GVSFJR datasheet, W25M02GVSFJR pinout, W25M02GVSFJR application, or W25M02GVSFJR equivalent, key selection considerations include its SpiStack® dual-die architecture, 128 KB uniform block erase granularity, JEDEC-compliant ID support, and compatibility with standard, dual, and quad I/O SPI protocols at up to 104 MHz clock frequency.
Technical Context
The W25M02GVSFJR implements a stacked-die Serial MCP architecture where two independent W25N01GV SLC NAND dies share a single SPI bus via Software Die Select (C2h) instruction and factory-assigned Die IDs. Only one die is active at any time to prevent bus contention, enabling true concurrent operations such as Read-while-Program/Erase across dies.
It supports three operational modes: Standard SPI (DI/DO), Dual SPI (IO0/IO1), and Quad SPI (IO0–IO3), with Fast Read Quad I/O achieving 416 MHz equivalent throughput. The device uses volatile and OTP-lockable status/configuration registers (SR-1/SR-2) to manage block protection, ECC enablement (ECC-E), buffer vs. continuous read mode (BUF), and OTP access control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Capacity | 2 G-bit (2 × 1 G-bit) total, organized as two independent 1 G-bit SLC NAND dies |
| Interface | Standard/Dual/Quad SPI with shared CLK, /CS, IO0–IO3; supports Fast Read Quad I/O at 104 MHz |
| Data Transfer Rate | Up to 50 MB/s continuous read throughput in Continuous Read Mode |
| Erase Granularity | Uniform 128 KB blocks - enables deterministic firmware update partitioning and wear leveling |
| Endurance & Retention | 100,000 program/erase cycles with on-chip 1-bit ECC; 10-year data retention at +85°C |
| Voltage & Temp | 2.7–3.6 V supply; -40°C to +85°C industrial operating range |
| Security Features | OTP-lockable protection register (BP bits, WP-E, SRP), 2 KB Unique ID page, ten 2 KB OTP pages |
Pinout & Package
W25M02GVSFJR is packaged in a 16-pin SOIC 300-mil (package code SF), with 8 functional pins and 8 no-connect (NC) pins. Pin assignments are fixed per datasheet Figure 1b and Table 3.4.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | /HOLD (IO3) | Active-low hold input; suspends ongoing serial transfer without deselecting device - preserves SPI state during host interrupt |
| 2 | VCC | Primary power supply (2.7–3.6 V); powers both stacked dies and internal logic |
| 7 | /CS | Chip select input; must transition high→low after power-up before first instruction accepted |
| 8 | DO (IO1) | Data output (standard/dual SPI) or bidirectional I/O (quad SPI); used for status/data readback |
| 9 | /WP (IO2) | Write protect input; hardware-enables SR-1 lock when WP-E=1; functions as IO2 in quad mode when WP-E=0 |
| 10 | GND | Signal and power ground reference for both dies; critical for noise immunity in high-speed SPI |
| 15 | DI (IO0) | Data input (standard/dual SPI) or bidirectional I/O (quad SPI); carries instructions, addresses, and program data |
| 16 | CLK | Serial clock input; edge-triggered; supports up to 104 MHz; timing-critical for all SPI modes |
Key Features
| Feature | Design Value |
|---|---|
| SpiStack® Dual-Die Architecture | Two independent W25N01GV dies in one SOIC package enable concurrent Program/Erase and Read operations across dies - improves effective throughput without external multiplexing |
| Continuous Read Mode | Single Read command accesses entire memory array sequentially - eliminates need for repeated Page Data Read commands, reducing host CPU overhead in boot/code-shadowing use cases |
| Configurable ECC & Bad Block Management | User-enabled 1-bit on-chip ECC corrects single-bit errors; BBM LUT accessible via A5h instruction - reduces firmware complexity for NAND reliability management |
| Flexible Write Protection | Combines software (SR-1 BP bits) and hardware (/WP pin) protection with OTP-lockable SRP bits - allows secure, field-programmable memory partitioning for bootloader/firmware separation |
| JEDEC ID & OTP Pages | Factory-programmed JEDEC manufacturer/device ID; 2 KB Unique ID page and ten 2 KB OTP pages - supports secure device authentication and immutable configuration storage |
Applications
| Industrial HMI Boot Storage | Medical Device Firmware Vault |
|---|---|
|
Use Scenario: Embedded HMI controller boots Linux kernel and rootfs from flash during cold start and performs over-the-air updates. IC Role / Device Role / Timing Role: Primary non-volatile code storage with concurrent read/program capability - enables background firmware download while UI remains responsive. Use Value: Continuous Read Mode reduces boot latency by 35% vs. buffer-read implementations; dual-die concurrency allows simultaneous OTA staging and runtime execution. |
Use Scenario: Portable diagnostic device stores FDA-certified firmware images and calibration data requiring tamper-proof integrity. IC Role / Device Role / Timing Role: Secure firmware vault with OTP-locked protection registers and unique ID binding - prevents unauthorized firmware modification or cloning. Use Value: Hardware /WP + OTP-lockable SRP bits ensure bootloader region is permanently write-protected; 2 KB Unique ID enables cryptographic device attestation. |
| Automotive Telematics Log Buffer | Smart Energy Meter Event Recorder |
|
Use Scenario: Cellular-connected telematics unit logs GPS, CAN, and sensor data continuously under wide temperature and vibration stress. IC Role / Device Role / Timing Role: High-endurance NAND buffer with 100K P/E cycles and 10-year retention - withstands frequent logging writes in automotive under-hood environments. Use Value: 128 KB uniform block erase simplifies wear-leveling algorithm design; on-chip ECC eliminates need for external error correction logic. |
Use Scenario: Utility meter records timestamped energy consumption events and outage logs for regulatory compliance over 15+ year service life. IC Role / Device Role / Timing Role: Long-term, low-power event storage with guaranteed data retention - leverages 2.7–3.6 V operation and 20 µA standby current for battery-backed operation. Use Value: Industrial -40°C to +85°C rating ensures reliability in outdoor enclosures; OTP pages store metrology calibration constants immune to field reprogramming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar serial NAND flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| W25M02GVZEIG | Same die and feature set, but in 8-pad WSON 8×6-mm (ZE) package - smaller footprint, no NC pins, thermal pad option | Better suited for space-constrained portable designs; lacks SOIC's mechanical robustness and hand-solderability | Select W25M02GVZEIG for PCB area optimization; choose W25M02GVSFJR for legacy SOIC compatibility and ease of prototyping. |
| MT29F2G08ABAEAH4-IT:E | 2 G-bit SLC NAND with x8 parallel interface (not SPI); requires dedicated NAND controller, no built-in ECC or BBM | Requires external ECC engine and BBM firmware; higher bandwidth but significantly more complex system integration | Choose MT29F2G08ABAEAH4-IT:E only when raw throughput >50 MB/s is mandatory and NAND controller resources are available. |
Compared with W25M02GVSFJR, W25M02GVZEIG offers identical functionality in a compact WSON package ideal for miniaturized designs, while MT29F2G08ABAEAH4-IT:E provides higher peak bandwidth but demands full NAND controller implementation - making W25M02GVSFJR the optimal balance of integration, ease of use, and industrial reliability.
Availability
W25M02GVSFJR is available at Aetrix Electronics and suitable for industrial HMI boot storage, medical device firmware vaults, and automotive telematics log buffers requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.
Supply support for W25M02GVSFJR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND flash, RAM, and voice ICs, serving industrial, automotive, and consumer markets since 1987.
The W25M series is Winbond's SpiStack® Multi-Chip Package family designed specifically for embedded systems needing high-density serial NAND with simplified interface, concurrent operation, and integrated reliability features - eliminating external NAND controllers.
FAQ
What is the exact memory organization of the W25M02GVSFJR?
The W25M02GVSFJR contains two independent 1 G-bit SLC NAND dies (W25N01GV) stacked in a single SOIC package. Each die has 128 KB uniform erase blocks, 2 KB pages, and supports separate addressing via Software Die Select (C2h) instruction. Total usable capacity is 256 MB (2 × 128 MB), with overhead reserved for bad block management and ECC metadata.
Does the W25M02GVSFJR support Quad SPI mode, and what are the required pin configurations?
Yes, the W25M02GVSFJR supports Quad SPI mode using IO0–IO3 (pins 15, 8, 9, and 1 respectively). In Quad mode, /WP and /HOLD function as IO2 and IO3; standard SPI commands remain compatible. Quad operation requires setting the BUF bit and enabling quad enable in the configuration register, and is validated up to 104 MHz clock frequency with Fast Read Quad I/O instructions (6Bh/6Ch).
How does the Continuous Read Mode in W25M02GVSFJR differ from Buffer Read Mode?
Continuous Read Mode allows direct sequential access to the entire memory array with a single Read command (03h/0Bh), eliminating the need to issue Page Data Read (13h) between pages. Buffer Read Mode requires explicit page-level reads and is optimized for random access. Both modes share identical instruction sets except for the Read command structure, and the BUF bit in SR-2 selects the active mode at power-up.
Can the W25M02GVSFJR be used as a drop-in replacement for standard SPI NOR flash in existing designs?
No - the W25M02GVSFJR is a serial SLC NAND device with different command set, ECC requirements, and bad block management versus SPI NOR. While pin-compatible with some NOR packages, it requires NAND-aware firmware (e.g., YAFFS2/JFFS2), dedicated initialization for die selection, and ECC handling. It is not a functional or timing drop-in replacement for NOR flash.
What is the role of the Software Die Select (C2h) instruction in the W25M02GVSFJR?
The Software Die Select (C2h) instruction allows the host to activate a specific stacked die (Die #0 or Die #1) by sending its 8-bit factory-assigned Die ID immediately after the instruction opcode. Only the selected die responds to subsequent commands; the other remains idle. This enables independent die access and concurrent operations - a core feature of the W25M02GVSFJR's SpiStack® architecture.
W25M02GVSFJR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- SpiFlash®
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- SPI - Quad I/O
- Clock Frequency:
- 104 MHz
- Write Cycle Time - Word, Page:
- 700µs
- Access Time:
- 7 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 105°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
W25M02GVSFJR FAQ
1.How can I place an order for W25M02GVSFJR through Aetrix?
Please submit a Request for Quotation (RFQ) for W25M02GVSFJR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W25M02GVSFJR reliable?
The price and inventory of W25M02GVSFJR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W25M02GVSFJR is usually 5 days.
3.What payment methods are accepted for W25M02GVSFJR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W25M02GVSFJR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W25M02GVSFJR?
W25M02GVSFJR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W25M02GVSFJR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W25M02GVSFJR?
For technical support, including W25M02GVSFJR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W25M02GVSFJR requirements.
6.How does Aetrix verify that W25M02GVSFJR is sourced from the original manufacturer or authorized distributors?
All W25M02GVSFJR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W25M02GVSFJR meets industry standards.
7.What is the process for return or replacement of W25M02GVSFJR?
All W25M02GVSFJR units undergo pre-shipment inspection (PSI). If there is an issue with W25M02GVSFJR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W25M02GVSFJR part is unused and in its original packaging.
Return procedure for W25M02GVSFJR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W25M02GVSFJR Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

