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Winbond Electronics Corporation W25M02GVZEJT

Part No.:
W25M02GVZEJT
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixW25M02GVZEJT.pdf
Description:
IC FLASH 2GBIT SPI/QUAD 8WSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,447

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Product details

Overview

W25M02GVZEJT from Winbond is a 2G-bit (2 × 1G-bit) Serial SLC NAND Flash MCP with dual/quad SPI interface, implemented as two stacked W25N01GV dies in a single 8-pad WSON 8×6-mm package. It delivers 50 MB/s continuous read throughput, supports concurrent read-while-program/erase operations, and enables independent die access via Software Die Select (C2h) instruction - ideal for space-constrained embedded boot storage and firmware update systems.

For engineers reviewing the W25M02GVZEJT datasheet, W25M02GVZEJT pinout, W25M02GVZEJT application, or W25M02GVZEJT equivalent, key selection considerations include its 104 MHz SPI clock support, on-chip 1-bit ECC, hardware/software write protection, 128 KB uniform block erase architecture, and dual-die concurrency for improved firmware update latency.

Technical Context

The W25M02GVZEJT implements SpiStack® architecture with two independent W25N01GV SLC NAND dies sharing a single SPI bus. Each die has a factory-assigned Die ID and is selected exclusively via C2h instruction, preventing bus contention while enabling true concurrent operations - including simultaneous program/erase on one die and read on the other.

It supports three operational modes: Standard SPI (DI/DO), Dual SPI (IO0/IO1), and Quad SPI (IO0–IO3), with Fast Read Quad I/O achieving up to 416 MHz equivalent bandwidth. Internal ECC corrects 1-bit errors per 528-byte page, and Bad Block Management uses a dedicated Look-Up Table (LUT) accessible via A5h instruction.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Capacity2 G-bit (2 × 1 G-bit) = 256 M-byte total, organized as two independent 128 M-byte dies
SPI Clock FrequencyUp to 104 MHz - enables 208 MHz (Dual I/O) or 416 MHz (Quad I/O) effective data rates
Continuous Read Throughput50 MB/s - eliminates need for repeated Page Data Read commands across full array access
Erase/Program Endurance100,000 cycles - specified with on-chip 1-bit ECC enabled per 528-byte page
Data Retention10 years at +85°C - guaranteed under JEDEC JESD22-A117 conditions with ECC active
Operating Voltage2.7 V to 3.6 V - single-supply operation compatible with standard 3.3 V embedded rails
Temperature Range−40°C to +85°C - industrial-grade qualification for automotive infotainment and industrial control

Pinout & Package

W25M02GVZEJT is packaged in an 8-pad WSON 8×6-mm (JEDEC MO-252 compliant) with exposed thermal pad, marked "ZE" per ordering code. Pin 1 is top-left corner (notch-marked), and all pins are surface-mount compatible with standard reflow profiles.

Pin Circuit Role Design Meaning
1/CSActive-low chip select - must transition high→low before any instruction; controls device enable and power state
2DO (IO1)Bidirectional data line - output in Standard SPI; I/O in Dual/Quad SPI; used for status/data reads
3/WP (IO2)Hardware write protect input - active low when WP-E=1; functions as IO2 in Quad SPI when WP-E=0
4GNDSignal and power ground reference - requires low-inductance connection for noise-sensitive SPI timing
5DI (IO0)Bidirectional data line - input in Standard SPI; I/O in Dual/Quad SPI; carries instructions, addresses, and data
6CLKInput-only serial clock - rising edge latches inputs; falling edge samples outputs; max 104 MHz
7/HOLD (IO3)Active-low suspend input - pauses ongoing read without deselecting; functions as IO3 in Quad SPI when WP-E=0
8VCCPrimary power supply - 2.7–3.6 V; decoupling capacitor (≥1 µF X7R) required within 5 mm of pin

Key Features

Feature Design Value
Software Die Select (C2h)Enables deterministic, instruction-based switching between two stacked dies - no external logic or address decoding needed
Concurrent OperationsAllows simultaneous read from one die while programming/erasing the other - reduces firmware update time by up to 40% in real-world implementations
Continuous Read ModeSingle Read command accesses entire memory array sequentially - eliminates overhead of 256K+ individual Page Data Read instructions for code shadowing
On-Chip 1-Bit ECCCorrects single-bit errors per 528-byte page in real time - removes need for host-side ECC engine and simplifies BSP integration
Configurable Write ProtectionCombines volatile BP[3:0] bits, OTP-lockable SRP[1:0], and /WP pin - supports hierarchical protection from sector to full-array levels

Applications

Boot Code Storage Firmware Update Buffer

Use Scenario: Storing primary bootloader and secure ROM images in resource-constrained microcontrollers with limited internal flash.

IC Role / Device Role / Timing Role: Non-volatile boot memory mapped via XIP or copied to RAM at power-on; accessed via continuous read mode for fast execution startup.

Use Value: 50 MB/s read speed and 128 KB uniform erase blocks enable sub-200 ms boot time even with 8 MB firmware images.

Use Scenario: Holding staged firmware updates in embedded gateways prior to atomic swap and validation.

IC Role / Device Role / Timing Role: Dual-die concurrency allows background download to one die while executing current firmware from the other - zero-downtime updates.

Use Value: Concurrent read-while-program eliminates update stalls; 100,000-cycle endurance supports >5 years of field upgrades.

Industrial HMI Display Cache Automotive Infotainment Media Buffer

Use Scenario: Caching UI assets (fonts, icons, bitmaps) in programmable logic controllers and HMIs where SD card reliability is insufficient.

IC Role / Device Role / Timing Role: High-speed serial NAND acting as persistent graphics buffer - accessed via Quad I/O for burst pixel transfers.

Use Value: 416 MHz equivalent bandwidth sustains 60 fps rendering of 1024×600 displays with <5 ms latency per frame load.

Use Scenario: Storing navigation map tiles and voice prompt audio in automotive head units requiring AEC-Q100 Grade 2 compliance.

IC Role / Device Role / Timing Role: Industrial-temperature qualified NAND with ECC and bad-block management - ensures data integrity over 15-year vehicle lifecycle.

Use Value: −40°C to +85°C operation and 10-year data retention meet OEM requirements without external temperature compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NAND flash applications.

Alternative Part Technical Difference Application Difference Selection Advice
Macronix MX35LF2GE4AB2 G-bit single-die SLC NAND; no dual-die concurrency or Software Die Select; supports only standard/dual SPI (no quad I/O)Lacks concurrent operations and continuous read mode - requires host-managed multi-step read sequencesChoose when cost sensitivity outweighs throughput and concurrency needs; suitable for static firmware storage only
Micron MT29F2G01ABAGDWB2 G-bit single-die SLC NAND; parallel NAND interface (not SPI); requires external controller and 48-pin packageHigher raw bandwidth but demands PCB real estate, signal integrity layout, and NAND controller IPChoose only if existing platform already includes NAND controller and board space permits larger footprint

Compared with MX35LF2GE4AB and MT29F2G01ABAGDWB, W25M02GVZEJT uniquely delivers dual-die concurrency, 50 MB/s continuous read, and quad SPI in an 8-pin WSON - reducing BOM count, eliminating NAND controller complexity, and cutting firmware update latency by enabling true background operations.

Availability

W25M02GVZEJT is available at Aetrix Electronics and suitable for industrial HMI, automotive infotainment, and embedded firmware update systems requiring stable component supply, long-term lifecycle assurance, and verified industrial-temperature performance.

Supply support for W25M02GVZEJT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND flash, RAM, and trusted computing ICs since 1987.

The W25M series is designed specifically for high-density, low-pin-count embedded storage - addressing the gap between NOR flash density limits and NAND flash interface complexity through SpiStack® MCP integration.

FAQ

What is the package type and footprint of W25M02GVZEJT?

W25M02GVZEJT uses an 8-pad WSON 8×6-mm package (JEDEC MO-252), with pin 1 located at the top-left corner adjacent to the notch marking. The package includes an exposed thermal pad on the bottom side, and the "ZE" suffix in the part number explicitly denotes this WSON variant. Its compact size enables placement in space-constrained modules such as wearable controllers and automotive sensor nodes.

Does W25M02GVZEJT support Quad SPI operation, and what are the required pin configurations?

Yes, W25M02GVZEJT supports Quad SPI using IO0–IO3 (pins 5, 2, 3, and 7 respectively). In Quad mode, /WP and /HOLD function as IO2 and IO3 - meaning their hardware write-protect functionality is disabled unless WP-E=1 is set in Status Register-1. All four I/O lines operate bidirectionally on both clock edges, enabling 416 MHz equivalent bandwidth with Fast Read Quad I/O (6Bh/6Ch) instructions.

How does the Software Die Select (C2h) instruction work in W25M02GVZEJT?

The Software Die Select (C2h) instruction allows explicit activation of either die (Die #0 or Die #1) by sending an 8-bit Die ID immediately after the opcode. Only one die is active at a time; the inactive die enters low-power standby. This mechanism enables deterministic die isolation without external multiplexing. After power-up or Device Reset (FFh), Die #0 is always active by default - W25M02GVZEJT relies on this behavior for boot consistency.

What ECC capability does W25M02GVZEJT provide, and how is it configured?

W25M02GVZEJT integrates on-chip 1-bit error correction per 528-byte page, controlled by the ECC-E bit (bit 4) in Status Register-2. When ECC-E=1, correction is enabled and ECC status bits (ECC-1/ECC-0 in Status Register-3) report correction events. Uncorrectable multi-bit errors trigger P-FAIL/E-FAIL flags. ECC operates transparently - no host software intervention is required beyond enabling the bit during initialization.

Can W25M02GVZEJT perform read and program/erase operations simultaneously on different dies?

Yes - W25M02GVZEJT supports true concurrent operations: while one die executes Program or Erase, the other die can serve Read commands (including Continuous Read and Fast Read variants). This is enabled by SpiStack® architecture and requires explicit die selection via C2h before each operation. Concurrent access improves firmware update throughput and eliminates read stalls during background writes - a capability not present in single-die serial NAND devices like W25N01GV.

W25M02GVZEJT Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
SpiFlash®
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NAND (SLC)
Memory Size:
2Gbit
Memory Organization:
256M x 8
Memory Interface:
SPI - Quad I/O
Clock Frequency:
104 MHz
Write Cycle Time - Word, Page:
700µs
Access Time:
7 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 105°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WSON (8x6)

W25M02GVZEJT FAQ

1.How can I place an order for W25M02GVZEJT through Aetrix?

Please submit a Request for Quotation (RFQ) for W25M02GVZEJT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W25M02GVZEJT reliable?

The price and inventory of W25M02GVZEJT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W25M02GVZEJT is usually 5 days.

3.What payment methods are accepted for W25M02GVZEJT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W25M02GVZEJT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W25M02GVZEJT?

W25M02GVZEJT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W25M02GVZEJT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W25M02GVZEJT?

For technical support, including W25M02GVZEJT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W25M02GVZEJT requirements.

6.How does Aetrix verify that W25M02GVZEJT is sourced from the original manufacturer or authorized distributors?

All W25M02GVZEJT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W25M02GVZEJT meets industry standards.

7.What is the process for return or replacement of W25M02GVZEJT?

All W25M02GVZEJT units undergo pre-shipment inspection (PSI). If there is an issue with W25M02GVZEJT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W25M02GVZEJT part is unused and in its original packaging.

Return procedure for W25M02GVZEJT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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