Winbond Electronics Corporation W25N04KWZEIR TR

Overview

W25N04KWZEIR TR from Winbond is a 1.8V SLC QspiNAND Flash memory IC with 4G-bit (512MB) capacity, organized as 262,144 × 2,048-byte pages and 4,096 × 128KB erasable blocks. It supports Standard/Dual/Quad SPI interfaces up to 104MHz clock (416MHz equivalent Quad I/O), delivers 50MB/s sequential read throughput, and integrates on-chip 8-bit ECC for NAND array integrity. It is used in embedded boot storage, firmware code shadowing, and XIP-capable microcontroller systems.

For engineers reviewing the W25N04KWZEIR TR datasheet, W25N04KWZEIR TR pinout, W25N04KWZEIR TR application, or W25N04KWZEIR TR equivalent, key selection considerations include 1.7–1.95V supply compatibility, dual/quad SPI command set support, buffer vs. sequential read mode configuration (BUF bit), ECC enable control (ECC-E), and hardware write protection behavior dependent on WP-E bit setting.

Technical Context

The W25N04KWZEIR TR implements a QspiNAND architecture that merges SPI serial interface simplicity with NAND flash density-enabling direct execution (XIP) and efficient large-block sequential access. Its dual-mode read operation (Buffer Read with BUF=1, Sequential Read with BUF=0) allows optimized data streaming or random page access.

It features three volatile status registers (SR-1 to SR-3) and extended ECC registers (BFD, BFS, BFR, MBF/MFS) for real-time bit-flip monitoring and failure reporting. Write protection is configurable via software (BP bits + WP-E) or hardware (WP-E=1 + /WP grounded), with OTP-lockable register bits for permanent security settings.

Key Specifications

Pinout & Package

W25N04KWZEIR TR is packaged in an 8-pad WSON 8×6-mm (JEDEC MO-252, package code ZE), with exposed pad for thermal dissipation. Pin assignments are fully defined per Figure 1 of the datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QspiNAND flash memory applications.

Compared with W25N04KWZEIR TR, the W25N02KVZEIR TR offers identical interface and reliability at half capacity for tighter BOM budgets, while GD5F4GQ4UCYIGR demands controller-level redesign and forfeits SPI simplicity - making W25N04KWZEIR TR the optimal balance of density, ease of integration, and industrial robustness.

Availability

W25N04KWZEIR TR is available at Aetrix Electronics and suitable for industrial HMI boot storage, edge AI sensor node firmware, and medical diagnostic device log storage requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for W25N04KWZEIR TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based global semiconductor manufacturer specializing in specialty memory solutions, including SPI NOR/NAND, mobile DRAM, and code storage flash.

The W25N QspiNAND product line was designed to replace parallel NAND and legacy SPI NOR in space-constrained, low-pin-count embedded systems - delivering NAND density with SPI simplicity and XIP capability.

FAQ

What is the operating voltage range for W25N04KWZEIR TR?

The W25N04KWZEIR TR operates from 1.70V to 1.95V. This narrow 1.8V nominal range enables ultra-low-power operation and compatibility with modern low-voltage SoCs and PMICs. Operation outside this range may cause functional failure or reduced endurance. The device draws only 25mA active current and 2µA in deep power-down mode, making it suitable for battery-powered applications where W25N04KWZEIR TR voltage tolerance and current efficiency are critical.

Does W25N04KWZEIR TR support execute-in-place (XIP) functionality?

Yes, W25N04KWZEIR TR supports XIP via Dual and Quad SPI Fast Read instructions (e.g., 3Bh, 6Bh, EBh), enabling microcontrollers to execute code directly from flash without copying to RAM. This capability relies on the device's 104MHz clock support and low-latency sequential read mode (BUF=0). W25N04KWZEIR TR's 50MB/s throughput and uniform 128KB block structure further optimize XIP performance for real-time embedded applications.

How does hardware write protection work on W25N04KWZEIR TR?

Hardware write protection on W25N04KWZEIR TR is activated by setting the WP-E bit (SR-2[5]) to 1 and grounding the /WP pin. When enabled, all program, erase, and register-write operations are disabled - rendering the entire device read-only, including OTP pages and status registers. This mode disables Quad SPI read commands as well. W25N04KWZEIR TR's hardware lock provides tamper-resistant firmware protection independent of software state, critical for safety-critical deployments.

What is the purpose of the BUF bit in W25N04KWZEIR TR's configuration register?

The BUF bit (SR-2[7]) in W25N04KWZEIR TR selects between Buffer Read mode (BUF=1, default) and Sequential Read mode (BUF=0). In Buffer Read mode, each Read Data (03h) command accesses one 2,048-byte page. In Sequential Read mode, a single command streams the entire memory array continuously - enabling high-throughput firmware loading or media playback. W25N04KWZEIR TR's 50MB/s rate is only achievable in Sequential Read mode with Quad I/O instructions.

Can W25N04KWZEIR TR be used in automotive applications?

W25N04KWZEIR TR is qualified for industrial Plus Grade (-40°C to +105°C), meeting AEC-Q100 stress test requirements for ambient temperature in many automotive subsystems such as ADAS camera modules and infotainment head units. While not AEC-Q100 certified out-of-box, its 10-year data retention at +105°C, 60,000 endurance cycles, and hardware write protection make W25N04KWZEIR TR a proven choice for non-safety-critical automotive storage where qualification support is available through Winbond's automotive program.