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Winbond Electronics Corporation W25N512GVEIR

Part No.:
W25N512GVEIR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixW25N512GVEIR.pdf
Description:
IC FLASH 512MBIT SPI/QUAD 8WSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,276

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Product details

Overview

W25N512GVEIR from Winbond is a 512M-bit (64MB) Serial SLC NAND Flash memory with Dual/Quad SPI interface, organized as 32,768 pages × 2,048 bytes, supporting 128KB uniform block erase, on-chip 1-bit ECC, and dual read modes (Buffer Read and Continuous Read). It operates from 2.7V to 3.6V and targets embedded code storage, firmware update, and data logging in space-constrained industrial controllers.

For engineers reviewing the W25N512GVEIR datasheet, W25N512GVEIR pinout, W25N512GVEIR application, or W25N512GVEIR equivalent, key selection considerations include its 166MHz SPI clock support, BUF-mode default configuration (BUF=1), TFBGA 8×6-mm 24-ball package, hardware/software write protection, and integrated bad block management with LUT access.

Technical Context

The W25N512GVEIR implements a serial NAND architecture with dedicated internal 2,048-byte buffer for page programming and supports three operational read modes: standard Buffer Read (default at power-up), Continuous Read (single-command full-array access), and Fast Read variants (Dual/Quad I/O up to 664MHz equivalent). Its command set includes JEDEC-compliant instructions for ID read, status register access, block erase (D8h), chip erase (C7h), and ECC-aware operations like Last ECC Failure Page Address (A9h).

It integrates configurable protection registers (SR-1/SR-2) with OTP-lockable bits for BP[3:0], WP-E, SRP[1:0], OTP-L, and ECC-E, plus status-only SR-3 reporting cumulative ECC status (ECC-1/ECC-0), P-FAIL/E-FAIL, and BUSY. The device uses standard SPI pins (/CS, CLK, DI/DO) extended to IO0–IO3 for Quad mode, with /WP and /HOLD repurposed as IO2/IO3 in Quad SPI but retaining hardware protection functions in Standard/Dual modes.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density512 M-bit (64 MB), organized as 32,768 × 2,048-byte pages
Interface SupportStandard SPI, Dual I/O, Quad I/O with up to 166 MHz clock (332/664 MHz equivalent)
Read Throughput50 MB/s continuous data transfer rate in Continuous Read Mode
Erase/Program Endurance100,000 cycles with on-chip 1-bit ECC correction (1 bit per 528 bytes)
Data Retention10 years at +85°C operating temperature
Power SupplySingle 2.7 V to 3.6 V supply; 25 mA active, 10 µA standby, 1 µA deep power-down
Operating Temperature–40°C to +85°C (industrial grade)
Default Read ModeBuffer Read Mode (BUF = 1) enabled at power-up

Pinout & Package

W25N512GVEIR is packaged in a 24-ball TFBGA 8×6-mm (package code B) with 5×5 ball array and 0.8 mm pitch. Pin assignments follow JEDEC MO-270AB standard, with no-connect balls omitted from functional mapping.

Pin/Terminal Circuit Role Design Meaning
B2CLKInput: Serial clock for all SPI modes; timing reference for instruction/data sampling
B3GNDGround reference for all I/O and core logic; required for stable voltage referencing
B4VCCPower supply input (2.7–3.6 V); powers flash array, buffer, and control logic
C2/CSInput: Active-low chip select; enables instruction decoding and transitions device from standby to active state
C4/WP (IO2)I/O: Hardware write protect input in Standard/Dual SPI; bidirectional data I/O (IO2) in Quad SPI
D2DO (IO1)I/O: Data output in Standard SPI; bidirectional data I/O (IO1) in Dual/Quad SPI
D3DI (IO0)I/O: Data input in Standard SPI; bidirectional data I/O (IO0) in Dual/Quad SPI
D4/HOLD (IO3)I/O: Pause ongoing serial transfer in Standard/Dual SPI; bidirectional data I/O (IO3) in Quad SPI

Key Features

Feature Design Value
Continuous Read ModeEnables single-command sequential access across entire memory array-eliminates repeated "Page Data Read" commands for code shadowing
On-chip 1-bit ECCAutomatically corrects single-bit errors per 528-byte sector; status bits (ECC-1/ECC-0) report correction events without host intervention
Configurable Protection RegistersSR-1 (volatile/OTP-lockable) and SR-2 (volatile) allow granular hardware/software write protection down to 128KB block level
Bad Block Management (BBM)Host-accessible Look-Up Table (LUT) stores invalid block addresses; A1h/A5h instructions manage and query BBM state
Unique & OTP PagesOne 2KB Unique ID page, one 2KB parameter page, and ten 2KB OTP pages for secure device identification and immutable configuration storage
Deep Power-Down ModeReduces current to 1 µA via B9h instruction; ABh releases device while preserving internal state for rapid wake-up

Applications

Industrial PLC Firmware Storage Medical Device Boot Code

Use Scenario: Storing boot firmware and field-upgradable application code in programmable logic controllers deployed in factory automation environments.

IC Role / Device Role / Timing Role: Non-volatile code storage with XIP-capable Dual/Quad SPI interface enabling direct execution or fast shadowing to RAM.

Use Value: 100,000 program/erase cycles and 10-year data retention ensure long-term reliability across maintenance intervals; Continuous Read Mode accelerates boot sequence by >30% vs. legacy page-by-page reads.

Use Scenario: Holding certified bootloader and safety-critical diagnostic routines in portable ultrasound and infusion pump systems requiring regulatory traceability.

IC Role / Device Role / Timing Role: Secure, tamper-resistant storage for immutable boot assets using OTP pages and hardware write protection (/WP pin + BP bits).

Use Value: On-chip 1-bit ECC prevents silent corruption of boot code; Unique ID page enables device-level serialization compliant with IEC 62304 requirements.

Smart Meter Data Logging Automotive Telematics OTA Storage

Use Scenario: Recording time-stamped energy consumption metrics in ANSI C12.19-compliant smart meters with limited PCB area and thermal budget.

IC Role / Device Role / Timing Role: High-density, low-power NAND storage managing cyclic overwrite of rolling log buffers using 128KB block erase granularity.

Use Value: 1 µA deep power-down current extends battery life during meter sleep cycles; TFBGA 8×6-mm footprint fits compact meter modules without compromising thermal dissipation.

Use Scenario: Storing signed firmware images and delta patches for over-the-air updates in automotive infotainment ECUs operating across –40°C to +85°C.

IC Role / Device Role / Timing Role: Robust, high-throughput flash memory supporting secure, atomic firmware swaps via dual-bank emulation using block-level erase control.

Use Value: 50 MB/s Continuous Read throughput reduces OTA installation time; SR-1 OTP locking prevents accidental modification of critical protection bits during field updates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial NAND flash applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT29F512G08CFAAA-IT512Gb (64GB) Toggle Mode 2.0 NAND; parallel interface (x8), not SPI; requires external controller for ECC and BBMTargeted at high-throughput SSD/embedded storage with dedicated NAND controller; incompatible pinout and protocolSelect only when system already includes NAND controller and requires higher density than SPI NAND allows
IS25LP512M512Mb (64MB) Quad SPI NOR flash; no ECC, no BBM, no Continuous Read; 133 MHz max clock, 4KB sector eraseSuitable for XIP code execution but lacks NAND's cost-per-bit advantage and wear leveling; no built-in bad block handlingPrefer for simple boot code where deterministic latency and no background management are required; avoid for large data logging

Compared with MT29F512G08CFAAA-IT and IS25LP512M, the W25N512GVEIR uniquely delivers SPI-native SLC NAND with integrated ECC, BBM, and Continuous Read-enabling direct microcontroller interfacing without external controller overhead, while balancing density, endurance, and protocol simplicity for mid-tier embedded applications.

Availability

W25N512GVEIR is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device boot code, and smart meter data logging requiring stable component supply, long-lifecycle support, and qualified industrial-temperature operation.

Supply support for W25N512GVEIR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR/NAND flash, RAM, and trusted computing ICs.

The W25N SpiFlash family was designed to bring NAND density and cost efficiency to SPI-based microcontroller platforms-eliminating the need for complex NAND controllers while delivering robust, managed flash for code and data in resource-constrained embedded systems.

FAQ

What is the default read mode for W25N512GVEIR at power-up?

The W25N512GVEIR powers up in Buffer Read Mode (BUF = 1) by default, as indicated by its "G" suffix in the part number variant W25N512GVxxG/T/R. This mode requires explicit "Page Data Read" (13h) before each read command. To enable Continuous Read Mode, the BUF bit (bit 0 of Configuration Register SR-2) must be cleared to 0 via Write Status Register (1Fh) instruction. W25N512GVEIR maintains this configuration across power cycles only if SR-2 is written non-volatilely-though SR-2 itself is volatile-writable and does not support OTP lock.

Does W25N512GVEIR support Quad SPI operation in all package types?

Yes, W25N512GVEIR supports Quad SPI operation regardless of package type-including its TFBGA 8×6-mm (B) package used in W25N512GVEIR. Quad mode utilizes IO0–IO3 (DI, DO, /WP, /HOLD) as bidirectional data lines, with /WP and /HOLD functioning as IO2 and IO3 respectively. This is confirmed in Section 3.6 (Ball Description) and Section 4.2 of the datasheet, which explicitly states IO0–IO3 are used for Quad SPI instructions across all packages. No package-specific limitation applies.

How is bad block management implemented in W25N512GVEIR?

W25N512GVEIR implements on-die bad block management using a Look-Up Table (LUT) stored in reserved blocks. The A1h instruction initializes or updates the LUT, while A5h reads the full LUT contents. Invalid blocks-whether factory-marked or detected during program/erase-are recorded in the LUT, and the device automatically skips them during sequential operations. Host software accesses the LUT directly; no background scanning or remapping occurs autonomously. The LUT-F status bit (SR-3, bit 7) indicates when the LUT is full and requires host intervention.

What is the role of the /WP pin on W25N512GVEIR in Quad SPI mode?

In Quad SPI mode, the /WP pin on W25N512GVEIR serves exclusively as IO2-a bidirectional data line-and loses its hardware write-protection function. Hardware write protection remains available only in Standard and Dual SPI modes, where /WP acts as an active-low input controlling SR-1's Block Protect bits when WP-E = 1. In Quad mode, write protection must be enforced entirely through software configuration of SR-1 (BP[3:0], SRP[1:0]) and SR-2 (SR1-L, OTP-L), as stated in Note 2 of Section 3.2 and Section 4.3 of the datasheet.

Can W25N512GVEIR be used for Execute-in-Place (XIP) applications?

Yes, W25N512GVEIR supports Execute-in-Place (XIP) from Dual and Quad SPI interfaces, as explicitly stated in Section 1 ("General Descriptions") of the datasheet: "ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)". Its Fast Read Dual/Quad I/O instructions (BBh/Ebh and variants) deliver high effective bandwidth (up to 664 MHz equivalent), and Continuous Read Mode enables seamless linear instruction fetch. However, XIP requires MCU-level SPI memory-mapped controller support-not all microcontrollers provide this capability out-of-box.

W25N512GVEIR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
SpiFlash®
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NAND (SLC)
Memory Size:
512Mbit
Memory Organization:
64M x 8
Memory Interface:
SPI - Quad I/O
Clock Frequency:
166 MHz
Write Cycle Time - Word, Page:
700µs
Access Time:
6 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-WSON (8x6)

W25N512GVEIR FAQ

1.How can I place an order for W25N512GVEIR through Aetrix?

Please submit a Request for Quotation (RFQ) for W25N512GVEIR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W25N512GVEIR reliable?

The price and inventory of W25N512GVEIR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W25N512GVEIR is usually 5 days.

3.What payment methods are accepted for W25N512GVEIR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W25N512GVEIR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W25N512GVEIR?

W25N512GVEIR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W25N512GVEIR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W25N512GVEIR?

For technical support, including W25N512GVEIR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W25N512GVEIR requirements.

6.How does Aetrix verify that W25N512GVEIR is sourced from the original manufacturer or authorized distributors?

All W25N512GVEIR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W25N512GVEIR meets industry standards.

7.What is the process for return or replacement of W25N512GVEIR?

All W25N512GVEIR units undergo pre-shipment inspection (PSI). If there is an issue with W25N512GVEIR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W25N512GVEIR part is unused and in its original packaging.

Return procedure for W25N512GVEIR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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