Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W29EE011P90Z

Name: W29EE011P90Z
Brand: Winbond Electronics Corporation
SKU: W29EE011P90Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: W29EE011P90Z

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 32-LCC (J-Lead)

Datasheet:: W29EE011P90Z.pdf

Description:: IC FLASH 1MBIT PARALLEL 32PLCC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,655

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

W29EE011P90Z from Winbond is a 1-Mbit (128K × 8) 5-V-only CMOS flash memory IC used for non-volatile code and data storage in embedded microcontroller systems. It supports page-write (128-byte pages), software chip erase (50 ms), and dual write-status detection via DQ7 data polling and DQ6 toggle bit. Its 90 ns read access time, 10 ms max page-program cycle, and 1K program/erase cycles make it suitable for firmware boot storage in industrial controllers and legacy instrumentation.

For engineers reviewing the W29EE011P90Z datasheet, W29EE011P90Z pinout, W29EE011P90Z application, or W29EE011P90Z equivalent, key selection considerations include its lead-free 32-pin PLCC package, JEDEC byte-wide pinout compatibility, 5-V-only operation (no VPP), hardware and software data protection, and support for in-system programming with standard EPROM programmers.

Technical Context

The W29EE011P90Z implements a NOR-type flash architecture with latched address/data inputs and TTL-compatible I/Os. Its internal timing generator handles automatic program/erase cycles, eliminating external timing control. The device uses a two-stage write process: byte-load cycle (≤200 µs per byte, up to 128 bytes/page) followed by self-timed internal programming (≤10 ms).

Write status is monitored via two independent mechanisms-DQ7 data polling (complement-to-true transition) and DQ6 toggle bit (alternating 0/1 until completion)-enabling flexible host system polling strategies. Software protection is implemented via JEDEC-standard 3-byte command sequences at addresses 5555H/2AAAH, while hardware protection includes noise immunity (<15 ns #WE pulse rejection) and VDD power-up/down detection (operation inhibited below 3.8 V).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 Mbit (128K × 8 bits): provides sufficient space for small firmware images or configuration tables in resource-constrained MCU systems.
Read Access Time	90 ns (W29EE011P90Z): enables direct execution from flash (XIP) in 8-bit bus systems with ≤11 MHz clock domains.
Page Write Cycle	10 ms max: allows efficient bulk updates of 128-byte blocks without requiring full-chip erase, reducing field update latency.
Chip Erase Time	50 ms: significantly faster than typical parallel flash devices, supporting rapid reprogramming during manufacturing or service.
Data Retention	10 years: ensures long-term reliability for unpowered storage in industrial environments without refresh.
Power Supply	5 V ±10% only: eliminates need for 12-V VPP programming voltage, simplifying power design and enabling single-rail systems.
Operating Temp.	0 °C to +70 °C: validated for commercial and industrial ambient conditions, not extended temperature grades.
Package	Lead-free 32-pin PLCC: RoHS-compliant surface-mount package with 1.27 mm pitch, compatible with standard PLCC sockets and reflow profiles.

Pinout & Package

W29EE011P90Z is housed in a lead-free 32-pin Plastic Leaded Chip Carrier (PLCC) package with J-lead configuration, 1.27 mm pitch, and 13.97 mm × 13.97 mm body size (per datasheet section 12.2). Pin 1 is located at the index corner adjacent to the notch.

Pin/Terminal	Circuit Role	Design Meaning
A0–A16	Address Inputs	17-bit address bus accepting 00000H–1FFFFH range; A0–A6 select byte within 128-byte page, A7–A16 select page.
DQ0–DQ7	Data I/O Bidirectional Bus	8-bit data path supporting read, byte-load, and status polling; TTL-compatible with VOH ≥2.4 V, VOL ≤0.45 V.
#CE	Chip Enable (active low)	Primary device select; high disables outputs and reduces current to 20 µA (CMOS standby), enabling multi-device bus sharing.
#OE	Output Enable (active low)	Gates output drivers; high places DQ bus in high-impedance state, allowing safe bus contention during writes or reads of other devices.
#WE	Write Enable (active low)	Controls write initiation and data latching; falling edge latches address, rising edge latches data during byte-load cycle.
VDD	Power Supply	+5 V ±10% supply; powers core logic and charge pump; internal VPP generation eliminates external high-voltage circuitry.
GND	Ground Reference	0 V reference for all signals and power; requires low-impedance connection to minimize noise coupling into sensitive flash array.
NC	No Connection	Pins marked NC (e.g., pins 13, 31, 32 on PLCC) are internally unconnected; must be left floating or tied to GND per board layout best practice.

Key Features

Feature	Design Value
5-V-only operation	Eliminates requirement for 12-V VPP programming voltage, reducing BOM count and PCB complexity in 5-V systems.
Page-write architecture	128-byte pages enable partial updates without erasing entire chip, preserving valid data and minimizing reprogramming overhead.
Dual write-status detection	Simultaneous DQ7 data polling and DQ6 toggle bit allow host firmware to choose optimal polling method based on timing constraints or interrupt capability.
JEDEC software data protection	Three-byte unlock sequence prevents accidental writes during power transitions or noise events, critical for field-updatable firmware integrity.
Hardware write inhibition	Automatic disable of write operations when VDD < 3.8 V or when #OE/#CE/#WE violate timing, preventing corruption during brown-out conditions.
TTL-compatible I/O	Direct interface with 8-bit microcontrollers and FPGAs without level-shifting, supporting legacy designs and cost-sensitive applications.

Applications

Industrial PLC Firmware Storage	Legacy Instrumentation Boot Memory
Use Scenario: Storing firmware and calibration constants in programmable logic controllers operating in factory-floor environments with wide temperature swings and electrical noise. IC Role / Device Role / Timing Role: Non-volatile boot memory mapped to MCU address space; accessed during cold start and firmware updates via serial bootloader. Use Value: 10-year data retention and hardware write protection ensure firmware integrity across decades of unattended operation, even during frequent power cycling.	Use Scenario: Holding boot code and instrument-specific configuration in benchtop test equipment such as digital multimeters and oscilloscopes. IC Role / Device Role / Timing Role: Primary code storage executing directly from flash (XIP); supports field upgrades via RS-232 or USB-to-parallel adapters. Use Value: 90 ns read access enables real-time execution without wait states on 8-bit MCUs, while 50 ms chip erase accelerates factory calibration reprogramming.
Embedded Controller Configuration EEPROM Replacement	Automotive Diagnostic Module Code Storage
Use Scenario: Replacing serial EEPROM in HVAC controllers where higher density and faster write performance are needed for logging operational parameters. IC Role / Device Role / Timing Role: Page-write buffer stores sensor history or fault logs; software protection prevents corruption during vehicle ignition transients. Use Value: 128-byte page writes reduce update time by >90% versus byte-wise EEPROM writes, improving responsiveness of diagnostic logging functions.	Use Scenario: Storing OBD-II protocol stack and vehicle-specific adaptation data in aftermarket diagnostic tools operating in automotive 12-V battery environments. IC Role / Device Role / Timing Role: Standalone flash memory interfaced to 8051 or ARM7-based host processor; powered from regulated 5-V rail derived from vehicle battery. Use Value: VDD monitoring and noise-immune #WE filtering prevent spurious writes during engine cranking, ensuring diagnostic code remains intact after repeated starts.

Industrial PLC Firmware Storage

Legacy Instrumentation Boot Memory

Use Scenario: Storing firmware and calibration constants in programmable logic controllers operating in factory-floor environments with wide temperature swings and electrical noise.

IC Role / Device Role / Timing Role: Non-volatile boot memory mapped to MCU address space; accessed during cold start and firmware updates via serial bootloader.

Use Value: 10-year data retention and hardware write protection ensure firmware integrity across decades of unattended operation, even during frequent power cycling.

Use Scenario: Holding boot code and instrument-specific configuration in benchtop test equipment such as digital multimeters and oscilloscopes.

IC Role / Device Role / Timing Role: Primary code storage executing directly from flash (XIP); supports field upgrades via RS-232 or USB-to-parallel adapters.

Use Value: 90 ns read access enables real-time execution without wait states on 8-bit MCUs, while 50 ms chip erase accelerates factory calibration reprogramming.

Embedded Controller Configuration EEPROM Replacement

Automotive Diagnostic Module Code Storage

Use Scenario: Replacing serial EEPROM in HVAC controllers where higher density and faster write performance are needed for logging operational parameters.

IC Role / Device Role / Timing Role: Page-write buffer stores sensor history or fault logs; software protection prevents corruption during vehicle ignition transients.

Use Value: 128-byte page writes reduce update time by >90% versus byte-wise EEPROM writes, improving responsiveness of diagnostic logging functions.

Use Scenario: Storing OBD-II protocol stack and vehicle-specific adaptation data in aftermarket diagnostic tools operating in automotive 12-V battery environments.

IC Role / Device Role / Timing Role: Standalone flash memory interfaced to 8051 or ARM7-based host processor; powered from regulated 5-V rail derived from vehicle battery.

Use Value: VDD monitoring and noise-immune #WE filtering prevent spurious writes during engine cranking, ensuring diagnostic code remains intact after repeated starts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
AT29C010A-12JC	1-Mbit, 12V VPP required; 120 ns access; 10K endurance; 10-year retention.	Requires external 12-V programming supply; incompatible with 5-V-only systems; slower read timing.	Select only if legacy 12-V infrastructure exists and VPP generation is already available on board.
SST39SF010A-90-4C-NHE	1-Mbit, 5-V-only; 90 ns access; 10K endurance; 100 µA standby current; 32-pin PLCC.	Higher standby current (100 µA vs. 20 µA); identical pinout and command set; no hardware SID read function.	Preferred for lower-cost alternatives where 5× higher standby current is acceptable and SID read is unused.

Compared with AT29C010A-12JC and SST39SF010A-90-4C-NHE, the W29EE011P90Z offers superior low-power standby (20 µA), integrated VPP generation, and hardware SID read capability-making it optimal for battery-backed or energy-sensitive embedded systems requiring robust in-field firmware updates.

Availability

W29EE011P90Z is available at Aetrix Electronics and suitable for industrial PLC firmware storage, legacy instrumentation boot memory, embedded controller configuration, and automotive diagnostic module code storage requiring stable component supply and long-lifecycle support.

Supply support for W29EE011P90Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in memory ICs, including NOR/NAND flash, SRAM, and specialty DRAM products for industrial, computing, and communications markets.

The W29EE011P90Z belongs to Winbond's legacy parallel NOR flash product line, designed specifically for 8-bit microcontroller-based systems requiring simple, reliable, and cost-effective non-volatile storage with minimal external components.

FAQ

What is the maximum page-write time for W29EE011P90Z?

The W29EE011P90Z has a maximum page-write cycle time of 10 ms, covering both the byte-load phase (up to 128 bytes loaded within 200 µs intervals) and the internal programming phase. This value is specified under worst-case conditions (TA = +70 °C, VDD = 4.5 V) and applies to the full 128-byte page. The W29EE011P90Z datasheet confirms this in Section 8.3.4, Table "Byte/Page-write Cycle Timing Parameters".

Does W29EE011P90Z support hardware-assisted product identification?

Yes, W29EE011P90Z supports hardware product identification using a 12-V pulse on address pin A9 while holding #CE and #OE low and #WE high. This mode outputs manufacturer code DAh at address 0000H and device code C1h at address 0001H. However, the hardware SID read function is only present on parts ordered with suffix 'Y' in the Hardware SID Read column (per Ordering Information table), and W29EE011P90Z is explicitly marked 'Y'.

Can W29EE011P90Z be programmed using standard EPROM programmers?

Yes, W29EE011P90Z can be programmed and erased using standard EPROM programmers that support JEDEC-standard command sequences and 5-V-only operation. Its TTL-compatible I/O levels, JEDEC pinout, and software command set (including chip erase and product ID) ensure compatibility with widely deployed programming hardware-no special adapters or voltage translators are required for W29EE011P90Z.

What is the standby current specification for W29EE011P90Z?

The W29EE011P90Z specifies a typical standby current of 20 µA under CMOS input conditions (#CE = VDD − 0.3 V, all inputs at VDD − 0.3 V or GND), with a maximum of 100 µA. This low quiescent draw is critical for battery-powered or energy-harvesting applications. The value is documented in Section 8.2.1, "Operating Characteristics", Table "Standby VDD Current (CMOS input)".

How does software data protection work on W29EE011P90Z?

Software data protection on W29EE011P90Z requires a three-byte unlock sequence (AAh to 5555H, 55h to 2AAAH, A0h to 5555H) before any write operation. Once enabled, all subsequent writes-including page load and chip erase-must begin with this sequence. The W29EE011P90Z ships with protection enabled, and disabling requires a six-byte command (AAh/55h/80h/AAh/55h/20h), as detailed in Section 7.2 and Figure 7.2.1.

W29EE011P90Z Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 32-LCC (J-Lead)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH

Memory Size:: 1Mbit

Memory Organization:: 128K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 10ms

Access Time:: 90 ns

Voltage - Supply:: 4.5V ~ 5.5V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 32-PLCC (11.43x13.97)

W29EE011P90Z FAQ

1.How can I place an order for W29EE011P90Z through Aetrix?

Please submit a Request for Quotation (RFQ) for W29EE011P90Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W29EE011P90Z reliable?

The price and inventory of W29EE011P90Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29EE011P90Z is usually 5 days.

3.What payment methods are accepted for W29EE011P90Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29EE011P90Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W29EE011P90Z?

W29EE011P90Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W29EE011P90Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W29EE011P90Z?

For technical support, including W29EE011P90Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29EE011P90Z requirements.

6.How does Aetrix verify that W29EE011P90Z is sourced from the original manufacturer or authorized distributors?

All W29EE011P90Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29EE011P90Z meets industry standards.

7.What is the process for return or replacement of W29EE011P90Z?

All W29EE011P90Z units undergo pre-shipment inspection (PSI). If there is an issue with W29EE011P90Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W29EE011P90Z part is unused and in its original packaging.

Return procedure for W29EE011P90Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…