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Winbond Electronics Corporation W29N01HVBINA TR
- Part No.:
- W29N01HVBINA TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 63-VFBGA
- Datasheet:
-
W29N01HVBINA TR.pdf
- Description:
- IC FLASH 1GBIT 63-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,293
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Product details
Overview
W29N01HVBINA TR from Winbond is a 1G-bit (128MB) SLC NAND Flash memory IC operating at 2.7–3.6V, organized into 1,024 erasable blocks of 135,168 bytes each (64 × 2,112-byte pages), with 2,048-byte main data + 64-byte spare area per page. It supports standard NAND command set including COPY BACK, and targets embedded code shadowing, media storage, and solid-state applications requiring industrial temperature range (–40°C to +85°C).
For engineers reviewing the W29N01HVBINA TR datasheet, W29N01HVBINA TR pinout, W29N01HVBINA TR application, or W29N01HVBINA TR equivalent, key selection criteria include x8 multiplexed I/O interface, 25μs random read latency, 250μs typical page program time, 2ms block erase time, and support for RY/#BY status monitoring and #WP hardware write protection.
Technical Context
The W29N01HVBINA TR implements a standard NAND Flash architecture with separate Command Latch Enable (CLE) and Address Latch Enable (ALE) signals, enabling time-multiplexed command/address/data transfer over an 8-bit I/O bus. Its control logic decodes five primary signals (#CE, #WE, #RE, CLE, ALE) to manage page read, program, block erase, and copy-back operations.
It features a dedicated status register accessible via READ STATUS (70h) command, open-drain RY/#BY output for real-time operation monitoring, and hardware-level write protection via active-low #WP. The device uses Single-Level Cell (SLC) technology, delivering 100,000 program/erase cycles and 10-year data retention under 1-bit/528-byte ECC correction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 G-bit / 128 MB total capacity - enables compact firmware and media storage in space-constrained embedded systems. |
| Page Size | 2,112 bytes (2,048 + 64) - 64-byte spare area reserved for ECC metadata and bad-block management. |
| Block Size | 135,168 bytes (64 × 2,112) - matches industry-standard 128KB+4KB layout for compatibility with NAND file systems. |
| Random Read Time | 25 μs max - determines minimum latency for non-sequential instruction or configuration data access. |
| Page Program Time | 250 μs typical - defines write throughput when updating firmware patches or logging data. |
| Block Erase Time | 2 ms typical - sets recovery time before reprogramming a block after wear leveling or garbage collection. |
| Endurance | 100,000 P/E cycles - specifies maximum rewrites per block before failure, critical for logging or OTA update use cases. |
| Data Retention | 10 years at 85°C - guarantees data integrity over product lifetime without refresh in industrial environments. |
Pinout & Package
W29N01HVBINA TR is packaged in a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) with 0.8 mm ball pitch, footprint size 9 mm × 11 mm (Package Code B per datasheet). All Vcc and Vss balls must be connected; DNU (Do Not Use) and N.C. (No Connect) balls are unassigned and must remain unconnected.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable input | Active-low global enable: high = standby mode (10 μA), low = active operation; enables power gating per chip select. |
| #WE | Write Enable input | Rising-edge latch control for commands, addresses, and data; synchronizes all write-cycle timing (tWP, tWH). |
| #RE | Read Enable input | Falling-edge triggered serial data output; column address auto-increments per pulse; tREA = 25 ns max access delay. |
| CLE | Command Latch Enable input | High during #WE rising edge latches I/O[7:0] as command byte (e.g., 00h, 80h, 60h); isolates command path from address/data. |
| ALE | Address Latch Enable input | High during #WE rising edge latches I/O[7:0] as address byte; supports 4-cycle addressing for full 1G-bit address space. |
| #WP | Write Protect input | Active-low hardware lock: low = disables all program/erase commands; prevents accidental corruption during power transitions. |
| RY/#BY | Ready/Busy output | Open-drain status indicator: low = internal operation in progress (read/program/erase), high = ready for next command. |
| I/O[0–7] | Bidirectional data bus | Multiplexed 8-bit path for commands (1B), addresses (4B), and data (2112B/page); requires external bus arbitration logic. |
| Vcc | Power supply | Single 2.7–3.6V supply; all Vcc balls must be decoupled locally to meet active current (25 mA typ.) and noise requirements. |
| Vss | Ground | Reference for all I/O and core logic; all Vss balls require low-impedance connection to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| SLC NAND architecture | Guarantees 100K P/E cycles and 10-year retention-enables reliable logging and firmware storage in industrial controllers. |
| COPY BACK command support | Enables internal page-to-page data relocation without host RAM buffering-reduces system memory overhead during wear leveling. |
| Standard NAND command set | Ensures drop-in compatibility with existing NAND controllers and Linux MTD/UBI drivers without custom firmware. |
| Hardware write protection (#WP) | Provides fail-safe block-level write disable during brown-out or reset-eliminates need for software-based lock mechanisms. |
| Ready/Busy open-drain output | Allows wired-OR connection of multiple NAND devices on shared bus-simplifies multi-chip design in SSD or eMMC modules. |
Applications
| Industrial HMI Storage | Medical Device Firmware |
|---|---|
|
Use Scenario: Storing boot code, GUI assets, and calibration tables in panel-mounted HMIs deployed in factory automation. IC Role / Device Role / Timing Role: Non-volatile code and asset storage with direct XIP-capable read access via memory-mapped controller. Use Value: 25 μs random read latency enables responsive UI rendering; 128MB capacity accommodates multilingual fonts and vector graphics. |
Use Scenario: Holding FDA-compliant firmware updates and device configuration profiles in portable diagnostic equipment. IC Role / Device Role / Timing Role: Secure, field-upgradable firmware repository with hardware write protection against unauthorized modification. Use Value: #WP pin ensures firmware integrity during power loss; 100K endurance supports >5 years of scheduled OTA updates. |
| Smart Meter Data Logging | Automotive Infotainment Cache |
|
Use Scenario: Recording hourly energy consumption snapshots and tamper-event timestamps in ANSI C12.22-compliant meters. IC Role / Device Role / Timing Role: High-reliability sequential write buffer with built-in bad-block management and ECC-ready spare area. Use Value: 2ms block erase time enables rapid log rotation; 64-byte spare area stores BCH-8 ECC syndromes per page. |
Use Scenario: Caching navigation map tiles and voice prompt audio in automotive head units with limited DRAM bandwidth. IC Role / Device Role / Timing Role: Low-latency media cache supporting burst reads and background copy-back for seamless UI transitions. Use Value: COPY BACK command allows silent page relocation during idle cycles-minimizing UI stutter during active navigation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4-IT:E | 1G-bit x8 SLC NAND, 3V, 48-ball VFBGA (9×11mm), ONFI 2.3 compliant; slightly faster 20μs random read. | Requires ONFI-compatible controller; lacks COPY BACK command; different status register bit mapping. | Select when ONFI ecosystem integration is required and COPY BACK is not needed. |
| TC58NVG1S3ETA00 | 1G-bit x8 SLC NAND, 3.3V, 48-ball VFBGA (9×11mm); Toshiba (Kioxia) part with 25μs random read, same block/page structure. | Uses different command set (e.g., 30h vs 00h/30h dual-cycle read); no native COPY BACK; proprietary parameter page format. | Choose for legacy Toshiba platform continuity; verify command timing and status register compatibility. |
Compared with MT29F1G08ABAEAH4-IT:E and TC58NVG1S3ETA00, the W29N01HVBINA TR offers unique COPY BACK functionality for efficient wear leveling, identical 9×11mm VFBGA footprint, and full backward compatibility with standard NAND controllers-making it optimal for new designs prioritizing firmware robustness and field-upgrade flexibility.
Availability
W29N01HVBINA TR is available at Aetrix Electronics and suitable for industrial HMI storage, medical device firmware, smart meter data logging, and automotive infotainment cache applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for W29N01HVBINA TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.
The W29N01HVBINA TR belongs to Winbond's W29N01HV family of SLC NAND Flash devices designed specifically for embedded systems demanding high reliability, low power, and compact packaging in harsh operating environments.
FAQ
What is the operating voltage range for the W29N01HVBINA TR?
The W29N01HVBINA TR operates across a single 2.7V to 3.6V supply range. This wide Vcc window ensures compatibility with common industrial 3.3V rails while tolerating brown-out conditions down to 2.7V without data corruption. All electrical characteristics-including 25mA active current and 10μA standby-are specified across this full range, making the W29N01HVBINA TR suitable for battery-backed or wide-input-power-supply applications.
Does the W29N01HVBINA TR support hardware write protection?
Yes, the W29N01HVBINA TR includes a dedicated active-low #WP (Write Protect) pin that, when driven low, disables all program and erase operations regardless of command sequence. This hardware lock prevents accidental writes during power-up/down transients or system resets. Unlike software-based locks, #WP remains effective even if the internal state machine is uninitialized-ensuring absolute protection for critical firmware sectors stored in the W29N01HVBINA TR.
What package type is used by the W29N01HVBINA TR?
The W29N01HVBINA TR uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch and overall dimensions of 9 mm × 11 mm (Package Code B). This compact, surface-mount package supports high-density PCB layouts and thermal performance suitable for industrial temperature operation (–40°C to +85°C). Pin assignments match Figure 3-3 in the official datasheet, and all Vcc/Vss balls require proper decoupling per Winbond's layout guidelines for the W29N01HVBINA TR.
How many program/erase cycles does the W29N01HVBINA TR guarantee?
The W29N01HVBINA TR guarantees 100,000 program/erase (P/E) cycles per block when used with 1-bit-per-528-byte ECC correction. This endurance rating is achieved using Single-Level Cell (SLC) technology and is validated under JEDEC JESD22-A117 stress conditions. Real-world endurance may vary based on ECC strength, temperature, and usage pattern-but the W29N01HVBINA TR's specification ensures reliable operation for >5 years in firmware update or data logging applications with daily block cycling.
What is the purpose of the spare area in each 2,112-byte page of the W29N01HVBINA TR?
Each page of the W29N01HVBINA TR contains a 64-byte spare area adjacent to the 2,048-byte main data region. This spare area is reserved for error-correcting code (ECC) parity bytes, logical-to-physical block mapping metadata, wear-leveling counters, and bad-block flags. Because the W29N01HVBINA TR is an SLC NAND device, the spare area enables robust BCH or RS-based ECC schemes-critical for maintaining data integrity over 100,000 P/E cycles and 10-year retention. Host controllers must manage this area explicitly during read/write operations.
W29N01HVBINA TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 63-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- -
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- 3ms
- Access Time:
- 6 ns
- Voltage - Supply:
- 1.65V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 63-VFBGA (9x11)
W29N01HVBINA TR FAQ
1.How can I place an order for W29N01HVBINA TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N01HVBINA TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N01HVBINA TR reliable?
The price and inventory of W29N01HVBINA TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HVBINA TR is usually 5 days.
3.What payment methods are accepted for W29N01HVBINA TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HVBINA TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N01HVBINA TR?
W29N01HVBINA TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N01HVBINA TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N01HVBINA TR?
For technical support, including W29N01HVBINA TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HVBINA TR requirements.
6.How does Aetrix verify that W29N01HVBINA TR is sourced from the original manufacturer or authorized distributors?
All W29N01HVBINA TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HVBINA TR meets industry standards.
7.What is the process for return or replacement of W29N01HVBINA TR?
All W29N01HVBINA TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HVBINA TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N01HVBINA TR part is unused and in its original packaging.
Return procedure for W29N01HVBINA TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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