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Winbond Electronics Corporation W29N01HVBINF TR
- Part No.:
- W29N01HVBINF TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 63-VFBGA
- Datasheet:
-
W29N01HVBINF TR.pdf
- Description:
- IC FLASH 1GBIT 63-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,538
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Product details
Overview
W29N01HVBINF TR from Winbond is a 1G-bit (128MB) x8 Single-Level Cell (SLC) NAND Flash memory operating on a single 2.7V–3.6V supply, organized into 1,024 erasable blocks of 135,168 bytes each (64 pages × 2,112 bytes), with 2,048-byte main data + 64-byte spare area per page. It supports standard NAND command set including COPY BACK, and targets embedded code shadowing, solid-state storage, and media data retention in space-constrained industrial systems.
For engineers reviewing the W29N01HVBINF TR datasheet, W29N01HVBINF TR pinout, W29N01HVBINF TR application, or W29N01HVBINF TR equivalent, key selection considerations include its 25μs random read latency, 250μs typical page program time, 2ms block erase time, 100,000 program/erase cycles endurance (with 4-bit/528-byte ECC), and support for 48-pin TSOP1 and 48-ball VFBGA packages.
Technical Context
The W29N01HVBINF TR implements a multiplexed x8 bus interface using five control signals-CLE, ALE, #CE, #WE, and #RE-to latch commands, addresses, and data on rising edges of #WE. Its internal architecture includes a dedicated status register, data register, high-voltage generator, and column/row decode units enabling full NAND protocol compliance.
It executes standardized operations including PAGE READ (00h–30h), RANDOM DATA OUTPUT (05h–E0h), READ STATUS (70h), PAGE PROGRAM (80h–10h), BLOCK ERASE (60h–D0h), and RESET (FFh), with RY/#BY open-drain output signaling active operation status and #WP providing hardware write protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 G-bit / 128 MB total capacity, sufficient for firmware images or boot partitions in resource-limited embedded hosts. |
| Page Size | 2,112 bytes (2,048B main + 64B spare), enabling ECC metadata storage and robust error management per page. |
| Block Size | 135,168 bytes (64 × 2,112B), defining minimum erasable unit for wear leveling and bad-block management. |
| Read Latency | 25 μs random read access time, supporting responsive code execution during RAM shadowing. |
| Program Time | 250 μs typical page program time, enabling fast field updates without excessive host wait states. |
| Erase Endurance | 100,000 program/erase cycles (with 4-bit/528-byte ECC), ensuring long-term reliability in logging or configuration storage. |
| Data Retention | 10 years at 85°C, meeting industrial temperature requirements for unattended deployment. |
Pinout & Package
W29N01HVBINF TR is packaged in 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) with 0.5 mm pitch, footprint 9 mm × 11 mm (Package Code D), suitable for high-density PCB layouts requiring compact non-volatile storage.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable input | Active-low global enable; high state places device in CMOS standby (10 μA), isolating I/O pins. |
| #WE | Write Enable input | Rising edge latches commands, addresses, or data into respective registers during valid cycles. |
| #RE | Read Enable input | Falling edge initiates serial data output from data register; toggling increments column address. |
| CLE | Command Latch Enable | High enables I/O[7:0] to load command codes (e.g., 00h, 80h, 60h) on next #WE rise. |
| ALE | Address Latch Enable | High enables I/O[7:0] to load address bytes (column/row) on next #WE rise. |
| RY/#BY | Ready/Busy output | Open-drain signal low during active read/program/erase; used for polling or interrupt-driven timing. |
| #WP | Write Protect input | Active-low hardware lock preventing accidental program/erase; must be pulled high for normal operation. |
| I/O[0–7] | Bidirectional data bus | Multiplexed path for commands (1 byte), addresses (up to 4 bytes), and data (2,112 bytes/page). |
| Vcc | Power supply | Single 2.7–3.6V supply; all Vcc pins must be connected to ensure stable internal voltage regulation. |
| Vss | Ground | Reference ground; all Vss pins must be connected to minimize noise and ensure logic threshold integrity. |
Key Features
| Feature | Design Value |
|---|---|
| SLC NAND architecture | Delivers higher endurance and faster access vs. MLC/TLC, critical for industrial firmware storage. |
| COPY BACK command support | Enables efficient page relocation without external buffering, reducing host-side RAM overhead. |
| Standard NAND command set | Ensures compatibility with common NAND controllers and Linux MTD/UBI drivers out-of-box. |
| 48-ball VFBGA package | Reduces board area by ~40% vs. 48-pin TSOP1 while maintaining thermal performance for dense designs. |
| Hardware write protection | Prevents corruption during power transients or software faults via dedicated #WP pin. |
Applications
| Industrial HMI Firmware Storage | Medical Device Boot Image |
|---|---|
|
Use Scenario: Storing boot firmware and UI assets in panel-mounted HMIs deployed in factory environments with wide temperature swings. IC Role / Device Role / Timing Role: Non-volatile code storage with direct XIP-capable shadowing to RAM during cold start. Use Value: 10-year data retention at 85°C and 100K P/E cycles ensure firmware integrity over equipment lifetime without refresh. |
Use Scenario: Holding certified bootloader and diagnostic application binaries in Class II medical instruments requiring traceable, immutable storage. IC Role / Device Role / Timing Role: Secure, tamper-resistant primary boot medium interfaced via standard NAND controller. Use Value: Hardware #WP pin prevents runtime corruption; spare area supports FDA-mandated ECC logging and version validation. |
| Smart Meter Data Logging | Automotive Telematics Module |
|
Use Scenario: Recording time-stamped consumption data in utility meters operating continuously for 15+ years. IC Role / Device Role / Timing Role: High-endurance log buffer with wear-leveling-aware host firmware. Use Value: 25μs random read and 250μs page program enable rapid timestamp lookups and burst writes during peak load events. |
Use Scenario: Storing OTA update packages and vehicle configuration profiles in automotive infotainment ECUs. IC Role / Device Role / Timing Role: Field-upgradable persistent storage compliant with AEC-Q100 Grade 2 (-40°C to 105°C). Use Value: 63-ball VFBGA variant (pin-compatible family member) supports automotive thermal cycling; COPY BACK aids safe dual-bank updates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4-IT:E | 1G-bit SLC NAND, 3.3V, x8, 48-ball VFBGA; slightly slower 35μs random read, 300μs program time. | Same industrial temp range (-40°C to 85°C); lacks COPY BACK command support. | Choose when COPY BACK is unnecessary and Micron's qualification ecosystem is preferred. |
| TC58NVG1S3ETA00 | 1G-bit SLC NAND, 3.3V, x8, 48-ball VFBGA; 20μs random read, but only 30K P/E cycles and 5-year retention at 85°C. | Rated for -40°C to 85°C; supports ONFI 1.0 but no parameter page read (ECh command). | Choose for latency-critical apps where endurance and retention are secondary to speed. |
Compared with W29N01HVBINF TR, MT29F1G08ABAEAH4-IT:E offers broader automotive qualification but omits COPY BACK, while TC58NVG1S3ETA00 trades endurance and retention for marginally faster reads-making W29N01HVBINF TR optimal for long-life industrial firmware storage demanding both speed and reliability.
Availability
W29N01HVBINF TR is available at Aetrix Electronics and suitable for industrial HMI firmware storage, medical device boot image retention, smart meter data logging, and automotive telematics module design requiring stable component supply across extended product lifecycles.
Supply support for W29N01HVBINF TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.
The W29N series is Winbond's industrial-grade SLC NAND Flash product line designed specifically for embedded systems requiring high reliability, long data retention, and robust operation across extended temperature ranges.
FAQ
What is the operating voltage range for W29N01HVBINF TR?
The W29N01HVBINF TR operates from 2.7V to 3.6V DC on a single Vcc supply. This range ensures compatibility with standard 3.3V system rails while accommodating brown-out conditions down to 2.7V without functional loss. All Vcc and Vss pins must be connected per datasheet requirements to maintain internal voltage regulation stability in the W29N01HVBINF TR.
Does W29N01HVBINF TR support hardware write protection?
Yes, W29N01HVBINF TR includes a dedicated #WP (Write Protect) pin that, when driven low, disables all program and erase operations regardless of command sequence. This hardware lock prevents accidental firmware corruption during power transitions or software exceptions, and is fully independent of internal status register settings in the W29N01HVBINF TR.
What package type does W29N01HVBINF TR use?
W29N01HVBINF TR uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm ball pitch and 9 mm × 11 mm body size (Package Code D). This compact footprint supports high-density PCB layouts and provides thermal performance comparable to TSOP1 while reducing board area by approximately 40% versus the 48-pin variant.
How many program/erase cycles does W29N01HVBINF TR guarantee?
W29N01HVBINF TR guarantees 100,000 program/erase cycles when used with 4-bit-per-528-byte Error Correcting Code (ECC), as specified in the datasheet. This endurance rating applies under industrial temperature conditions (-40°C to 85°C) and assumes proper wear-leveling firmware implementation by the host controller managing the W29N01HVBINF TR.
What NAND commands does W29N01HVBINF TR support beyond basic read/write/erase?
W29N01HVBINF TR supports extended NAND commands including COPY BACK (00h–35h and 85h–10h), READ PARAMETER PAGE (ECh), and READ ID with ONFI identification (90h + 20h). These enable advanced functions like page relocation without host buffering, device parameter auto-detection, and standardized interoperability-capabilities not present in baseline NAND controllers compatible with W29N01HVBINF TR.
W29N01HVBINF TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 63-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 63-VFBGA (9x11)
W29N01HVBINF TR FAQ
1.How can I place an order for W29N01HVBINF TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N01HVBINF TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N01HVBINF TR reliable?
The price and inventory of W29N01HVBINF TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HVBINF TR is usually 5 days.
3.What payment methods are accepted for W29N01HVBINF TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HVBINF TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N01HVBINF TR?
W29N01HVBINF TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N01HVBINF TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N01HVBINF TR?
For technical support, including W29N01HVBINF TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HVBINF TR requirements.
6.How does Aetrix verify that W29N01HVBINF TR is sourced from the original manufacturer or authorized distributors?
All W29N01HVBINF TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HVBINF TR meets industry standards.
7.What is the process for return or replacement of W29N01HVBINF TR?
All W29N01HVBINF TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HVBINF TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N01HVBINF TR part is unused and in its original packaging.
Return procedure for W29N01HVBINF TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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