Winbond Electronics Corporation W29N01HVDINA TR

Overview

W29N01HVDINA TR from Winbond is a 1G-bit (128MB) SLC NAND Flash memory IC operating at 2.7–3.6V, organized into 1,024 blocks of 64 pages each (2,112 bytes/page), with x8 multiplexed I/O bus and standard NAND command set. It delivers 25ns sequential read cycle time, 250μs typical page program time, and supports Copy Back, Read ID, and Parameter Page commands for embedded storage in space-constrained systems.

For engineers reviewing the W29N01HVDINA TR datasheet, W29N01HVDINA TR pinout, W29N01HVDINA TR application, or W29N01HVDINA TR equivalent, this device is selected for code shadowing, media data logging, and firmware storage where low standby current (10μA), industrial temperature range (−40°C to +85°C), and proven 100,000 P/E cycles with ECC are critical design requirements.

Technical Context

The W29N01HVDINA TR implements a standard NAND interface with five dedicated control signals (#CE, #WE, #RE, CLE, ALE) and an 8-bit bidirectional I/O bus, enabling command, address, and data multiplexing on shared pins. Its internal architecture includes a 2,112-byte data register, column/row decoders, high-voltage generator, and status register - all coordinated by logic control unit to execute ONFI-compatible operations including PAGE READ (00h–30h), BLOCK ERASE (60h–D0h), and COPY BACK.

It uses Single-Level Cell (SLC) technology with fixed 2,048-byte main area + 64-byte spare area per page, supporting 1-bit/528-byte ECC for endurance compliance. The device enters standby when #CE is high and asserts open-drain RY/#BY during active operations - requiring external pull-up for status monitoring.

Key Specifications

Pinout & Package

W29N01HVDINA TR is supplied in a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package (Package Code D), measuring 8 mm × 9 mm × 1.0 mm, with 0.5 mm ball pitch and bottom-side thermal pad. All Vcc and Vss balls must be connected; DNU and N.C. balls are unconnected and must remain floating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Compared with MT29F1G08ABAEAH4-IT:E and TC58NVG1S3ETA00, the W29N01HVDINA TR offers tighter sequential read timing (25 ns), standardized ONFI ID response, and documented 100,000-cycle endurance with minimal ECC overhead - making it optimal for new designs prioritizing timing predictability and driver portability.

Availability

W29N01HVDINA TR is available at Aetrix Electronics and suitable for industrial HMIs, automotive telematics modules, and edge AI gateways requiring stable component supply, long-term manufacturability, and guaranteed SLC NAND performance across temperature extremes.

Supply support for W29N01HVDINA TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR, Serial NAND, and DRAM products for industrial, automotive, and consumer markets.

The W29N01HVDINA TR belongs to Winbond's W29NxxHV SLC NAND Flash product line, designed specifically for embedded systems needing reliable, low-pin-count, high-density non-volatile storage with industrial-grade qualification and simplified controller integration.

FAQ

What is the operating voltage range for the W29N01HVDINA TR?

The W29N01HVDINA TR operates from 2.7 V to 3.6 V DC on its Vcc supply. This single-supply range eliminates need for level shifters in 3.3 V systems and ensures compatibility with standard industrial power rails. Operation outside this range may cause data corruption or permanent damage, as specified in Absolute Maximum Ratings (Table 10.1).

Does the W29N01HVDINA TR support ONFI standards?

Yes, the W29N01HVDINA TR supports ONFI 1.0 identification via READ ID command (90h followed by address 20h), returning the standardized 4-byte signature 4Fh 4Eh 46h 49h. While not a full ONFI 2.x compliant device, this enables basic interoperability with generic NAND controllers that rely on ONFI ID for initialization.

How is bad block management handled in the W29N01HVDINA TR?

The W29N01HVDINA TR implements factory-marked initial invalid blocks and supports dynamic bad block detection during program/erase operations. Invalid blocks are identified by non-FFh data in the first page's spare area, and the device provides Parameter Page (ECh) access to retrieve block status metadata - enabling host software to maintain a logical-to-physical mapping table.

What is the meaning of "DINA" in the part number W29N01HVDINA TR?

"DINA" in W29N01HVDINA TR denotes the 48-ball VFBGA package (Package Code D), Industrial temperature grade (−40°C to +85°C), No lead-free exemption (RoHS-compliant), and Tape & Reel packaging (TR). This distinguishes it from TSOP1 (S) or 63-ball VFBGA (B) variants and confirms full industrial qualification.

Can the W29N01HVDINA TR be used with a standard NAND controller?

Yes, the W29N01HVDINA TR uses the industry-standard NAND command set (e.g., 00h/30h for read, 80h/10h for program, 60h/D0h for erase) and timing parameters aligned with JEDEC JESD22-A117. Controllers designed for x8 SLC NAND - such as those in NXP i.MX, Microchip SAM9, or Renesas RZ series - support W29N01HVDINA TR without modification when configured for 25 ns tRC and 250 μs tPROG.