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Winbond Electronics Corporation W29N01HVDINF
- Part No.:
- W29N01HVDINF
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
W29N01HVDINF.pdf
- Description:
- IC FLASH 1GBIT 48-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,115
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Product details
Overview
W29N01HVDINF from Winbond is a 1G-bit (128MB) SLC NAND Flash memory operating at 2.7V–3.6V, organized into 1,024 erasable blocks of 135,168 bytes each (64 pages × 2,112 bytes), with x8 multiplexed I/O interface and standard NAND command set including COPY BACK. It delivers 25ns sequential read cycle time, 250μs typical page program time, and supports industrial temperature range (−40°C to +85°C) for embedded storage in space-constrained systems.
For engineers reviewing the W29N01HVDINF datasheet, W29N01HVDINF pinout, W29N01HVDINF application, or W29N01HVDINF equivalent, key selection considerations include its 48-ball VFBGA (D-code) package, 100,000 P/E cycles with 1-bit/528-byte ECC, RY/#BY open-drain status signaling, and compatibility with ONFI 1.0 parameter page structure for host controller initialization.
Technical Context
The W29N01HVDINF implements a standard NAND architecture with separate Command Latch Enable (CLE) and Address Latch Enable (ALE) signals for multiplexed bus operation, enabling command, address, and data transfers over the same 8-bit I/O[0–7] lines. Its control logic interprets ONFI-compliant commands (e.g., 00h/30h page read, 80h/10h page program, 60h/D0h block erase) and supports random data access within a loaded page via 05h/E0h sequence.
It integrates internal high-voltage generation for program/erase operations, uses an open-drain RY/#BY output to signal active operations, and relies on external ECC handling - with endurance and retention specifications explicitly conditioned on 1-bit-per-528-byte error correction. The device requires no external power sequencing beyond standard CMOS Vcc/Vss decoupling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 G-bit / 128 MB total capacity, sufficient for firmware images or media buffers in resource-limited embedded hosts. |
| Page size | 2,112 bytes (2,048 main + 64 spare), where spare area stores ECC metadata and wear-leveling tags. |
| Block size | 135,168 bytes (64 pages × 2,112 B), defining minimum erasable unit for flash translation layer (FTL) management. |
| Read performance | 25 ns sequential read cycle time enables high-throughput streaming; 25 μs random read latency supports fast code fetch. |
| Program/Erase | 250 μs typical page program time; 2 ms typical block erase time - critical for real-time logging and update responsiveness. |
| Endurance | 100,000 program/erase cycles, validated under 1-bit/528-byte ECC correction - defines usable lifetime in write-intensive applications. |
| Data retention | 10 years at 85°C, ensuring long-term reliability in industrial environments without refresh. |
Pinout & Package
W29N01HVDINF is packaged in a 48-ball Very Fine Pitch Ball Grid Array (VFBGA) with Package Code D, footprint 8.0 mm × 8.0 mm × 1.0 mm (JEDEC MO-245), compatible with automated SMT assembly and high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable (active low) | Asserts device selection; high disables I/O and forces standby mode (10 μA), essential for multi-device bus arbitration. |
| #WE | Write Enable (active low) | Latches command, address, or data on rising edge - synchronizes all input transfers in multiplexed interface. |
| #RE | Read Enable (active low) | Controls serial data output timing; valid data appears after tREA (25 ns max), enabling precise read sampling. |
| ALE | Address Latch Enable | Signals that I/O bus carries row/column address data - required before issuing #WE to load address register. |
| CLE | Command Latch Enable | Signals that I/O bus carries command byte (e.g., 00h, 80h, 60h) - must be asserted before #WE to load command register. |
| RY/#BY | Ready/Busy (open drain) | Low during active operations (read/program/erase); host must poll or interrupt on this line to avoid premature access. |
| #WP | Write Protect (active low) | Hardware lock disabling all program/erase commands - prevents accidental corruption during power transitions or resets. |
| I/O[0–7] | Bidirectional data bus | Multiplexed path for commands, addresses, and data - reduces pin count but requires strict timing control per ONFI spec. |
| Vcc | Power supply | Single 2.7V–3.6V supply; all Vcc pins must be decoupled locally to meet active current (25 mA typ.) and noise requirements. |
| Vss | Ground | Reference for all signals; all Vss balls must be connected to solid ground plane to ensure signal integrity and ESD robustness. |
Key Features
| Feature | Design Value |
|---|---|
| SLC NAND technology | Guarantees predictable 100K P/E cycles and 10-year retention - eliminates uncertainty of MLC/TLC in mission-critical firmware storage. |
| COPY BACK command support | Enables internal page-to-page copy without host data transfer - reduces wear and accelerates garbage collection in FTL implementations. |
| ONFI 1.0 parameter page (ECh) | Provides standardized, self-describing timing, geometry, and feature data - simplifies host driver development and eliminates hard-coded assumptions. |
| Industrial temperature range | Validated operation from −40°C to +85°C - suitable for automotive infotainment, industrial HMIs, and outdoor IoT gateways without derating. |
| Low standby current | 10 μA typical CMOS standby draw - extends battery life in always-on edge devices and enables rapid wake-from-sleep operation. |
Applications
| Firmware Storage in Microcontroller-Based Systems | Industrial Data Logging |
|---|---|
|
Use Scenario: Storing boot code, application firmware, and configuration parameters for ARM Cortex-M or RISC-V microcontrollers with limited internal flash. IC Role / Device Role / Timing Role: Nonvolatile code storage accessed via memory-mapped or GPIO-banged NAND interface during cold start and field updates. Use Value: 128MB capacity accommodates full firmware images plus version rollback partitions; 25ns read speed ensures sub-100ms boot times. |
Use Scenario: Capturing sensor readings, event timestamps, and diagnostic logs in programmable logic controllers (PLCs) and motor drives. IC Role / Device Role / Timing Role: High-endurance write buffer supporting cyclic overwrite of fixed-size log sectors with wear leveling. Use Value: 100,000 P/E cycles enable >5 years of daily 100-write-cycle logging at 1KB/sec sustained rate without failure. |
| Embedded Multimedia Buffering | Secure Boot Image Repository |
|
Use Scenario: Caching audio/video frames or thumbnail databases in digital signage, IP cameras, and medical imaging displays. IC Role / Device Role / Timing Role: High-bandwidth sequential read medium interfaced through DMA-capable NAND controller for zero-copy playback. Use Value: 25ns read cycle enables >30 MB/s effective throughput - sufficient for 1080p60 H.264 decode buffering. |
Use Scenario: Storing signed bootloader binaries and root-of-trust certificates in secure boot chains for industrial gateways and edge AI accelerators. IC Role / Device Role / Timing Role: Tamper-resistant, write-protected storage for immutable boot assets, leveraging #WP pin and ECC-validated reads. Use Value: Hardware write protection prevents runtime corruption; 10-year retention ensures certificate validity across product lifecycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4 | 1Gb SLC NAND in 48-ball VFBGA; identical x8 interface, ONFI 2.2, but higher 35ns read cycle and 3.3V-only supply (no 2.7V support). | Requires tighter Vcc regulation and yields ~12% lower sequential read bandwidth; not drop-in due to timing and voltage range mismatch. | Select only if ONFI 2.2 features (e.g., enhanced parameter page) are required and system Vcc is fixed at 3.3V ±5%. |
| TC58NVG1S3ETA00 | 1Gb SLC NAND in 48-pin TSOP-I; same 2.7–3.6V range and 25ns read, but larger 12×20mm package and different pinout (no ball grid). | Suitable for legacy PCBs with TSOP footprints; incompatible with VFBGA layout; thermal performance differs due to package construction. | Choose for cost-sensitive, non-space-constrained designs where rework tolerance and hand-solderability outweigh density needs. |
Compared with MT29F1G08ABAEAH4 and TC58NVG1S3ETA00, the W29N01HVDINF offers optimal balance of industrial temperature support, low-voltage flexibility, and compact VFBGA packaging - making it preferred for new designs targeting high-density, wide-input-voltage embedded storage.
Availability
W29N01HVDINF is available at Aetrix Electronics and suitable for firmware storage in microcontroller-based systems, industrial data logging, embedded multimedia buffering, secure boot image repositories, and other applications requiring stable component supply with guaranteed long-term availability.
Supply support for W29N01HVDINF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.
The W29N01HVDINF belongs to Winbond's W29NxxHV SLC NAND Flash product line, designed specifically for embedded systems demanding high reliability, extended temperature operation, and simplified NAND interface integration without external controller complexity.
FAQ
What is the exact memory organization of the W29N01HVDINF?
The W29N01HVDINF contains a 1G-bit (128MB) memory array organized into 1,024 erasable blocks. Each block holds 64 pages of 2,112 bytes (2,048 main + 64 spare), resulting in 135,168 bytes per block and 138,412,032 total bytes. This structure is fixed and documented in the device's datasheet Section 6.1 and Figure 6-1.
Does the W29N01HVDINF support ONFI compliance, and which version?
Yes, the W29N01HVDINF supports ONFI 1.0 compliance, confirmed by its READ PARAMETER PAGE (ECh) command output and Table 9.2 (ONFI identifying codes 4Fh/4Eh/46h/49h). It does not implement ONFI 2.x features such as NV-DDR interface or enhanced timing modes - only basic parameter page and command set alignment.
What is the role of the spare area in each page of the W29N01HVDINF?
The 64-byte spare area in each 2,112-byte page of the W29N01HVDINF is reserved for error management functions - primarily storing ECC parity bits, logical-to-physical block mapping metadata, and wear-leveling counters. It is inaccessible during normal read/write operations unless explicitly accessed via RANDOM DATA OUTPUT within the same page.
Can the W29N01HVDINF operate at 2.7V, and what are the implications?
Yes, the W29N01HVDINF is fully specified for operation from 2.7V to 3.6V. At 2.7V, AC timing parameters (e.g., tREA, tR) widen slightly per datasheet Table 10.11, and program/erase times increase marginally - but all functionality remains guaranteed. This enables direct use in battery-powered systems with declining voltage profiles.
How is endurance defined for the W29N01HVDINF, and what ECC is required?
Endurance for the W29N01HVDINF is rated at 100,000 program/erase cycles, explicitly conditioned on implementation of 1-bit error correction per 528-byte sector (i.e., standard BCH or Hamming ECC). Without this ECC level, endurance drops significantly and is not characterized - the specification assumes compliant host controller ECC handling.
W29N01HVDINF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (8x6.5)
W29N01HVDINF FAQ
1.How can I place an order for W29N01HVDINF through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N01HVDINF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N01HVDINF reliable?
The price and inventory of W29N01HVDINF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HVDINF is usually 5 days.
3.What payment methods are accepted for W29N01HVDINF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HVDINF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N01HVDINF?
W29N01HVDINF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N01HVDINF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N01HVDINF?
For technical support, including W29N01HVDINF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HVDINF requirements.
6.How does Aetrix verify that W29N01HVDINF is sourced from the original manufacturer or authorized distributors?
All W29N01HVDINF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HVDINF meets industry standards.
7.What is the process for return or replacement of W29N01HVDINF?
All W29N01HVDINF units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HVDINF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N01HVDINF part is unused and in its original packaging.
Return procedure for W29N01HVDINF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W29N01HVDINF Tags
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M24C02-WMN6TP
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