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Winbond Electronics Corporation W29N01HVDINF TR
- Part No.:
- W29N01HVDINF TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
W29N01HVDINF TR.pdf
- Description:
- IC FLASH 1GBIT 48-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,893
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Product details
Overview
W29N01HVDINF TR from Winbond is a 1G-bit (128MB) SLC NAND Flash memory operating on a single 2.7V–3.6V supply, organized into 1,024 blocks of 135,168 bytes each (64 pages × 2,112 bytes), with 2,048-byte main data + 64-byte spare area per page. It supports standard NAND command set including Copy Back, and targets embedded code shadowing, media storage, and solid-state applications requiring industrial temperature support (–40°C to +85°C).
For engineers reviewing the W29N01HVDINF TR datasheet, W29N01HVDINF TR pinout, W29N01HVDINF TR application, or W29N01HVDINF TR equivalent, key selection criteria include x8 multiplexed bus interface, TSOP1/VFBGA package options, 25μs random read latency, 250μs typical page program time, and 100,000 program/erase cycles with ECC-managed endurance.
Technical Context
This device implements a standard asynchronous NAND Flash architecture with command/address/data multiplexing over an 8-bit I/O bus. Control logic relies on five dedicated signals-CLE, ALE, #CE, #WE, and #RE-to sequence command latching, address loading, and data transfer without internal clocking or timing controller dependency.
It uses Single-Level Cell (SLC) technology for deterministic performance and reliability, supporting full-page sequential reads (25ns cycle), random column access within loaded pages, and block-level erase (2ms typical). The RY/#BY open-drain output provides hardware-ready signaling, while #WP enables hardware write protection independent of command execution.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 G-bit / 128 MB total capacity, enabling compact firmware and media storage in space-constrained designs |
| Page Size | 2,112 bytes (2,048B main + 64B spare), matching standard ECC engine sector boundaries for error correction |
| Block Size | 135,168 bytes (64 × 2,112B), defining minimum erasable unit for wear leveling and bad-block management |
| Read Performance | 25 μs random read access; 25 ns sequential read cycle - determines boot latency and streaming throughput |
| Program/Erase | 250 μs typical page program; 2 ms typical block erase - impacts firmware update duration and log-structured file system efficiency |
| Endurance | 100,000 program/erase cycles (with 4-bit/528-byte ECC), specifying usable lifetime under sustained write workloads |
| Data Retention | 10 years at 85°C - defines maximum archival stability in industrial thermal environments |
Pinout & Package
W29N01HVDINF TR is packaged in a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) with 0.5 mm pitch, footprint code D, measuring 9 mm × 7 mm. This package supports high-density PCB layouts and automated assembly while maintaining signal integrity for NAND timing margins.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable input | Active-low global enable: drives device into standby (10 μA) when high; required low for all operations |
| #WE | Write Enable input | Rising-edge latch control for commands, addresses, and data - synchronizes all input transfers |
| #RE | Read Enable input | Falling-edge triggered serial data output; toggling increments column address for sequential reads |
| CLE | Command Latch Enable | High enables I/O[7:0] to load command codes (e.g., 00h, 80h, 60h) into command register |
| ALE | Address Latch Enable | High enables I/O[7:0] to load 4-cycle row/column addresses into address register |
| RY/#BY | Ready/Busy output | Open-drain active-low status flag - low during program/erase/read; used for polling or interrupt-driven flow control |
| #WP | Write Protect input | Active-low hardware lock: disables all program/erase commands regardless of software state |
| I/O[0–7] | Bidirectional data bus | Multiplexed path for commands (1 byte), addresses (4 bytes), and data (2112 bytes/page) |
| Vcc | Power supply | Single 2.7–3.6 V supply - eliminates need for dual-rail regulators in embedded systems |
| Vss | Ground | Must connect all Vss balls; floating ground pins cause functional failure or parametric drift |
Key Features
| Feature | Design Value |
|---|---|
| SLC NAND architecture | Guarantees consistent 100K P/E cycles and 10-year data retention without wear-leveling controller overhead |
| Copy Back command support | Enables internal page-to-page data relocation without host RAM buffering - reduces system memory bandwidth pressure |
| Standard NAND command set | Ensures drop-in compatibility with existing NAND controllers and Linux MTD/UBI drivers without firmware modification |
| Hardware write protection (#WP) | Prevents accidental firmware corruption during power-up/down or system reset sequences |
| Industrial temperature range | Validated operation from –40°C to +85°C - suitable for automotive infotainment, industrial HMIs, and outdoor edge devices |
Applications
| Embedded Boot Storage | Industrial Data Logging |
|---|---|
Use Scenario: Storing bootloader and kernel images for ARM Cortex-A/M series SoCs in fanless industrial gateways. IC Role / Device Role / Timing Role: Non-volatile code storage with fast random read (25 μs) to minimize boot time; accessed via standard NAND controller IP. Use Value: Eliminates need for external SPI NOR + eMMC combo; single-chip solution reduces BOM count and PCB area by 35%. |
Use Scenario: Cyclic logging of sensor telemetry (vibration, temperature, pressure) in predictive maintenance edge nodes. IC Role / Device Role / Timing Role: High-endurance block-erasable storage handling 500+ daily writes across 1,024 blocks with built-in bad-block management. Use Value: Achieves >5 years field life at 100K P/E cycles - avoids premature flash exhaustion seen with TLC alternatives. |
| Medical Device Firmware | Smart Meter Code Storage |
Use Scenario: Secure firmware image storage in Class II medical imaging peripherals requiring FDA-compliant data integrity. IC Role / Device Role / Timing Role: SLC-based NAND providing deterministic read/write timing and ECC-managed reliability for IEC 62304 compliance. Use Value: 64-byte spare area supports BCH-4 ECC implementation - meets bit-error rate requirements for safety-critical updates. |
Use Scenario: Firmware and tariff table storage in ANSI C12.22-compliant smart electricity meters deployed in utility substations. IC Role / Device Role / Timing Role: Industrial-grade non-volatile memory surviving wide ambient swings (–40°C to +85°C) and ESD-prone metering environments. Use Value: Hardware #WP pin prevents unauthorized firmware rewrites during field servicing - satisfies NIST IR 7628 security controls. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4-IT:E | 1G-bit x8 SLC NAND; 3.3V; 48-pin TSOP1 only; no 48-ball VFBGA option; 30 μs random read | Limited to TSOP1 packaging - unsuitable for ultra-dense layouts requiring VFBGA | Select when board layout prioritizes ease of rework over miniaturization and VFBGA is not required |
| TC58CVG1S3HRAIJ | 1G-bit x8 SLC NAND; 2.7–3.6V; 48-ball VFBGA; 35 μs random read; 300 μs program time; 30K P/E cycles | Lower endurance and slower timing - requires more aggressive wear leveling in high-write applications | Select when cost sensitivity outweighs longevity needs and 30K-cycle rating suffices for expected field life |
Compared with MT29F1G08ABAEAH4-IT:E and TC58CVG1S3HRAIJ, W29N01HVDINF TR delivers superior random read speed (25 μs), higher endurance (100K vs. 30K cycles), and direct VFBGA package compatibility - making it optimal for next-gen industrial and medical edge devices demanding density, speed, and long-term reliability.
Availability
W29N01HVDINF TR is available at Aetrix Electronics and suitable for embedded boot storage, industrial data logging, medical firmware storage, and smart meter applications requiring stable component supply, long lifecycle visibility, and industrial temperature qualification.
Supply support for W29N01HVDINF TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.
W29N01HVDINF TR belongs to Winbond's W29N01HV family of SLC NAND Flash memories designed specifically for resource-constrained embedded systems needing reliable, low-power, high-endurance non-volatile storage without complex controller dependencies.
FAQ
What is the operating voltage range for W29N01HVDINF TR?
W29N01HVDINF TR operates across a single 2.7V to 3.6V supply range. This wide Vcc window allows direct interfacing with common 3.3V I/O domains and accommodates brown-out conditions down to 2.7V without functional interruption. The device draws only 10 μA in CMOS standby mode at 3V, supporting ultra-low-power sleep states in battery-backed systems.
Does W29N01HVDINF TR support hardware write protection?
Yes, W29N01HVDINF TR includes a dedicated #WP (Write Protect) pin that, when driven low, disables all program and erase operations regardless of command sequence or internal state. This hardware lock prevents accidental firmware corruption during power transitions or system resets, and is fully compatible with industrial safety standards requiring fail-safe memory protection.
What package type does W29N01HVDINF TR use?
W29N01HVDINF TR uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch and footprint code D (9 mm × 7 mm). This package supports high-density PCB routing and automated assembly, and is distinct from the 48-pin TSOP1 and 63-ball VFBGA variants offered in the same W29N01HV family.
How many program/erase cycles is W29N01HVDINF TR rated for?
W29N01HVDINF TR is rated for 100,000 program/erase cycles when used with 4-bit-per-528-byte ECC correction, as specified in the datasheet. This endurance level is guaranteed under industrial temperature conditions (–40°C to +85°C) and reflects SLC NAND's inherent reliability advantage over MLC or TLC technologies in mission-critical embedded applications.
What NAND command set does W29N01HVDINF TR implement?
W29N01HVDINF TR implements the standard NAND Flash command set (e.g., 00h/30h for page read, 80h/10h for page program, 60h/D0h for block erase) plus extended commands including Copy Back (00h/35h and 85h/10h). It also supports READ ID (90h), READ STATUS (70h), and RESET (FFh), ensuring full compatibility with industry-standard NAND controllers and open-source drivers like Linux MTD.
W29N01HVDINF TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 2.7V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (8x6.5)
W29N01HVDINF TR FAQ
1.How can I place an order for W29N01HVDINF TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N01HVDINF TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N01HVDINF TR reliable?
The price and inventory of W29N01HVDINF TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HVDINF TR is usually 5 days.
3.What payment methods are accepted for W29N01HVDINF TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HVDINF TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N01HVDINF TR?
W29N01HVDINF TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N01HVDINF TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N01HVDINF TR?
For technical support, including W29N01HVDINF TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HVDINF TR requirements.
6.How does Aetrix verify that W29N01HVDINF TR is sourced from the original manufacturer or authorized distributors?
All W29N01HVDINF TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HVDINF TR meets industry standards.
7.What is the process for return or replacement of W29N01HVDINF TR?
All W29N01HVDINF TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HVDINF TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N01HVDINF TR part is unused and in its original packaging.
Return procedure for W29N01HVDINF TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W29N01HVDINF TR Tags
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