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Winbond Electronics Corporation W29N01HVSINA TR
- Part No.:
- W29N01HVSINA TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
W29N01HVSINA TR.pdf
- Description:
- IC FLASH 1GBIT 133 48
- Quantity:
- Payment:
- Shipping:
Inventory:1,717
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Product details
Overview
W29N01HVSINA TR from Winbond is a 1G-bit (128MB) SLC NAND Flash memory IC operating at 2.7–3.6V, organized as 1,024 blocks × 64 pages × 2,112 bytes/page (2,048B main + 64B spare), with x8 multiplexed I/O bus and standard NAND command set including COPY BACK. It targets embedded code shadowing, media storage, and solid-state applications requiring industrial temperature support (−40°C to +85°C) in TSOP1-48 package.
For engineers reviewing the W29N01HVSINA TR datasheet, W29N01HVSINA TR pinout, W29N01HVSINA TR application, or W29N01HVSINA TR equivalent, key selection criteria include its 25μs random read latency, 250μs typical page program time, 2ms block erase time, 100,000 program/erase cycles endurance, and support for ONFI-compliant parameter page reads - all validated for TSOP1-48 mechanical and electrical interface compliance.
Technical Context
The W29N01HVSINA TR implements a standard NAND architecture with dedicated Command Latch Enable (CLE) and Address Latch Enable (ALE) signals enabling time-multiplexed command/address/data transfer over eight bidirectional I/O pins. Its control logic relies on five active-low strobes (#CE, #WE, #RE, #WP) plus open-drain RY/#BY status signaling.
It supports full command-set operations including PAGE READ (00h–30h), RANDOM DATA OUTPUT (05h–E0h), READ STATUS (70h), PAGE PROGRAM (80h–10h), COPY BACK (00h–35h / 85h–10h), and BLOCK ERASE (60h–D0h), with internal high-voltage generation for programming and erasing without external charge pumps.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 G-bit (128 MB total capacity), enabling compact firmware/media storage in space-constrained embedded systems |
| Memory Organization | 1,024 blocks × 64 pages × 2,112 bytes/page (2,048B user + 64B ECC/spare), defining physical layout for wear leveling and bad-block management |
| Read Performance | 25 μs random read access time; 25 ns sequential read cycle - critical for low-latency boot code execution and real-time data streaming |
| Program/Erase Speed | 250 μs typical page program time; 2 ms typical block erase time - determines firmware update throughput and log-write efficiency |
| Endurance & Retention | 100,000 program/erase cycles (with 1-bit/528-byte ECC); 10-year data retention - ensures long-term reliability in industrial logging and telemetry |
| Supply Voltage | 2.7 V to 3.6 V single supply - compatible with common 3.3V system rails and simplifies power design |
| Operating Temperature | −40°C to +85°C (Industrial grade) - qualified for deployment in automotive infotainment, industrial HMIs, and outdoor edge devices |
Pinout & Package
W29N01HVSINA TR is packaged in 48-pin TSOP1 (Package Code S), 12 mm × 20 mm footprint, with 0.5 mm pitch. All Vcc and Vss pins must be connected; DNU pins are unconnected and N.C. pins are internally unused.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable | Active-low chip select; places device in standby (10 μA) when high, enables command/address/data latching when low |
| #WE | Write Enable | Active-low strobe; latches CLE/ALE state and command/address/data on rising edge - defines timing window for input capture |
| #RE | Read Enable | Active-low strobe; outputs serial data from Data Register on falling edge with tREA delay - controls read data valid timing |
| CLE | Command Latch Enable | High during #WE pulse to route I/O[0–7] data to Command Register - separates command phase from address/data phases |
| ALE | Address Latch Enable | High during #WE pulse to route I/O[0–7] data to Address Register - enables 4-cycle addressing for block/page/column |
| RY/#BY | Ready/Busy Output | Open-drain signal; low during active program/erase/read - used for polling or interrupt-driven operation without constant register reads |
| #WP | Write Protect | Active-low hardware lock; disables all program/erase commands when asserted - prevents accidental corruption during power transitions |
| I/O[0–7] | Bidirectional Data Bus | Multiplexed path for commands (1 byte), addresses (4 bytes), and data (up to 2112 bytes) - reduces pin count vs parallel NOR |
Key Features
| Feature | Design Value |
|---|---|
| SLC NAND Technology | Guarantees 100,000 P/E cycles and 10-year data retention - essential for mission-critical firmware storage where MLC would fail prematurely |
| COPY BACK Command Support | Enables page-to-page relocation within same die without host RAM buffering - reduces wear leveling overhead and improves garbage collection efficiency |
| ONFI Parameter Page Read (ECh) | Provides standardized JEDEC ONFI 2.3-compatible configuration data (timing, geometry, vendor ID) - simplifies driver auto-detection and initialization |
| Hardware Write Protection | Dedicated #WP pin with immediate effect on all program/erase commands - eliminates need for software locks or register writes to prevent corruption |
| TSOP1-48 Mechanical Compatibility | Industry-standard 48-pin thin small-outline package with 0.5 mm pitch - ensures drop-in replacement capability and broad PCB assembly support |
Applications
| Industrial HMI Firmware Storage | Automotive Infotainment Boot Memory |
|---|---|
Use Scenario: Storing boot loader, OS kernel, and UI assets in programmable HMIs deployed in factory automation panels. IC Role / Device Role / Timing Role: Non-volatile code storage with fast random read (25 μs) to accelerate boot sequence and reduce UI latency. Use Value: Enables deterministic <100 ms cold-boot time and supports field firmware updates via block-erase/program cycles rated for 100K cycles. |
Use Scenario: Holding primary boot image and safety-critical firmware partitions in automotive head units operating across −40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-grade NAND Flash providing reliable storage under thermal cycling and EMI stress. Use Value: Meets AEC-Q100 Grade 3 requirements via extended temperature qualification and built-in hardware write protection (#WP). |
| Edge IoT Sensor Data Logger | Medical Diagnostic Device Media Buffer |
Use Scenario: Capturing timestamped sensor streams (vibration, temperature, pressure) in battery-powered predictive maintenance gateways. IC Role / Device Role / Timing Role: High-endurance data buffer supporting frequent small-block writes with COPY BACK-assisted wear leveling. Use Value: Achieves >5 years of continuous logging at 100 write cycles/day using 100K-cycle SLC NAND and spare-area ECC management. |
Use Scenario: Storing DICOM image thumbnails and procedural logs in portable ultrasound and ECG devices requiring FDA-compliant data integrity. IC Role / Device Role / Timing Role: Secure, long-retention media buffer with parameter-page-read capability for runtime configuration validation. Use Value: Ensures 10-year archival integrity of diagnostic metadata using 64-byte spare area for BCH ECC and metadata tagging. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4-IT:E | 1G-bit SLC NAND in 48-ball VFBGA; 30ns read cycle; requires 1.8V I/O voltage (VccQ = 1.8V) alongside 3.3V core | Board-level space savings via BGA; incompatible with TSOP1 socket or wave-solder reflow profiles | Select if footprint reduction and automated optical inspection (AOI) compatibility outweigh TSOP1 legacy support needs |
| TC58NVG1S3ETA00 | 1G-bit SLC NAND in 48-pin TSOP1; 25ns read cycle; supports ONFI 2.3 but lacks COPY BACK command per datasheet Rev. 1.0 | Drop-in pinout match for W29N01HVSINA TR; identical mechanical interface but missing COPY BACK for advanced wear leveling | Select only when COPY BACK is not required in firmware architecture and ONFI parameter page usage is minimal |
Compared with MT29F1G08ABAEAH4-IT:E and TC58NVG1S3ETA00, the W29N01HVSINA TR uniquely combines TSOP1-48 compatibility, full ONFI 2.3 parameter page support, and hardware-validated COPY BACK functionality - making it optimal for cost-sensitive industrial designs needing field-upgradable firmware with robust data integrity.
Availability
W29N01HVSINA TR is available at Aetrix Electronics and suitable for industrial HMI firmware storage, automotive infotainment boot memory, and edge IoT sensor data logging requiring stable component supply, long-lifecycle assurance, and TSOP1-48 manufacturing compatibility.
Supply support for W29N01HVSINA TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.
The W29N01HVSINA TR belongs to Winbond's W29N01HV family of SLC NAND Flash devices designed specifically for embedded systems with constrained space, power, and pin count - emphasizing reliability, industrial temperature operation, and standard NAND protocol compliance.
FAQ
What is the exact memory organization of the W29N01HVSINA TR?
The W29N01HVSINA TR contains 1,024 erasable blocks, each consisting of 64 programmable pages of 2,112 bytes (2,048 bytes main area + 64 bytes spare area). This yields a total capacity of 134,217,728 bytes (128 MB) of user-accessible storage. The spare area is reserved for ECC, wear-leveling metadata, and bad-block markers - all managed by the host controller. This structure is fixed and confirmed in the official datasheet Revision D, Section 6.1.
Does the W29N01HVSINA TR support ONFI standards, and which version?
Yes, the W29N01HVSINA TR supports ONFI 2.3 via the READ PARAMETER PAGE command (ECh), which returns standardized timing, geometry, and vendor identification data. Table 9.3 in the datasheet confirms output values compliant with ONFI 2.3 specification, including tPROG, tBERS, and bus width reporting. It does not support ONFI 3.x features like NV-DDR2 or enhanced command sets.
What is the function of the RY/#BY pin on the W29N01HVSINA TR, and how is it electrically implemented?
The RY/#BY pin on the W29N01HVSINA TR is an open-drain output that signals device busy status: it pulls low during active program, erase, or read operations and returns high when complete. As specified in Section 4.7, it requires an external pull-up resistor (typically 4.7–10 kΩ to Vcc) and is used for polling or interrupt-driven host control. Its open-drain nature allows wired-OR connection in multi-chip systems.
Can the W29N01HVSINA TR be used in place of a NOR Flash for XIP (eXecute-In-Place) applications?
No, the W29N01HVSINA TR cannot support true XIP due to its sequential, page-based read architecture and lack of random-access address lines. While it enables fast sequential reads (25 ns), code must be copied to RAM before execution. Its intended use is code shadowing - not direct execution - as explicitly stated in Section 1: "ideal for code shadowing to RAM".
What are the valid operating voltage ranges and current consumption specs for the W29N01HVSINA TR?
The W29N01HVSINA TR operates from 2.7 V to 3.6 V (Vcc), with typical active current draw of 25 mA during read/program/erase and 10 μA in CMOS standby mode. These values are measured at Vcc = 3.0 V and documented in Sections 2 and 10.4 of the datasheet. Operation outside this range risks data corruption or permanent damage per Absolute Maximum Ratings (Table 10.1).
W29N01HVSINA TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- -
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- 3ms
- Access Time:
- 6 ns
- Voltage - Supply:
- 1.65V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP
W29N01HVSINA TR FAQ
1.How can I place an order for W29N01HVSINA TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N01HVSINA TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N01HVSINA TR reliable?
The price and inventory of W29N01HVSINA TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HVSINA TR is usually 5 days.
3.What payment methods are accepted for W29N01HVSINA TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HVSINA TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N01HVSINA TR?
W29N01HVSINA TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N01HVSINA TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N01HVSINA TR?
For technical support, including W29N01HVSINA TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HVSINA TR requirements.
6.How does Aetrix verify that W29N01HVSINA TR is sourced from the original manufacturer or authorized distributors?
All W29N01HVSINA TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HVSINA TR meets industry standards.
7.What is the process for return or replacement of W29N01HVSINA TR?
All W29N01HVSINA TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HVSINA TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N01HVSINA TR part is unused and in its original packaging.
Return procedure for W29N01HVSINA TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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