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Winbond Electronics Corporation W29N01HVSINF

Part No.:
W29N01HVSINF
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixW29N01HVSINF.pdf
Description:
IC FLASH 1GBIT 48-TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,198

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Product details

Overview

W29N01HVSINF from Winbond is a 1G-bit (128MB) SLC NAND Flash memory operating at 2.7V–3.6V, organized into 1,024 blocks of 135,168 bytes each (64 pages × 2,112 bytes), with 2,048-byte main data + 64-byte spare area per page. It supports standard NAND command set including COPY BACK, and targets embedded code shadowing, media storage, and solid-state applications requiring industrial temperature range (−40°C to +85°C).

For engineers reviewing the W29N01HVSINF datasheet, W29N01HVSINF pinout, W29N01HVSINF application, or W29N01HVSINF equivalent, this page delivers verified electrical specs (25μs random read, 250μs page program), package mapping (48-pin TSOP1), validated pin functions (CLE, ALE, RY/#BY), and two confirmed alternative parts for NAND-based BOM design.

Technical Context

The W29N01HVSINF implements a multiplexed x8 interface using five control signals (#CE, #WE, #RE, CLE, ALE) and eight bidirectional I/O pins to manage command, address, and data transfers on a shared bus. Its internal architecture includes a dedicated status register, data register, high-voltage generator, and column/row decode units enabling full NAND protocol compliance.

It executes standard ONFI-compatible operations - PAGE READ (00h–30h), PAGE PROGRAM (80h–10h), BLOCK ERASE (60h–D0h), and READ STATUS (70h) - with built-in Ready/Busy (RY/#BY) open-drain signaling and hardware write protection via #WP. The device uses Single-Level Cell (SLC) technology, delivering 100,000 program/erase cycles and 10-year data retention under specified ECC conditions.

Key Specifications

Parameter Value and Actual Design Meaning
Density1 G-bit / 128 MB total capacity - sufficient for firmware images, boot code, and media buffers in space-constrained embedded systems.
Page Size2,112 bytes (2,048B main + 64B spare) - enables ECC metadata storage and error management without external overhead.
Block Size135,168 bytes (64 pages × 2,112B) - defines minimum erasable unit; impacts wear leveling granularity and update latency.
Read Performance25 μs random read time - determines worst-case latency for non-sequential access in real-time code execution.
Program Time250 μs typical page program - sets minimum write cycle duration for firmware updates or logging.
Endurance100,000 program/erase cycles - specifies maximum guaranteed rewrites per block before failure risk increases.
Data Retention10 years at 85°C - ensures long-term reliability for unpowered storage in industrial environments.

Pinout & Package

W29N01HVSINF is packaged in a 48-pin TSOP1 (Package Code S), 12 mm × 20 mm footprint, compatible with standard surface-mount assembly processes and legacy PCB layouts.

Pin/Terminal Circuit Role Design Meaning
#CEChip Enable inputActive-low global enable; places device in standby (10 μA) when high, enabling power gating in low-power systems.
#WEWrite Enable inputRising-edge latch control for commands, addresses, and data - synchronizes all write-cycle timing to system clock edge.
#RERead Enable inputFalling-edge triggered serial data output; column address auto-increments per pulse for sequential reads.
CLECommand Latch EnableHigh during command input on I/O[7:0]; selects command register path - critical for correct opcode decoding (e.g., 00h, 80h, 60h).
ALEAddress Latch EnableHigh during address input on I/O[7:0]; selects address register path - enables 4-cycle addressing for full 28-bit row/column space.
RY/#BYReady/Busy outputOpen-drain active-low signal indicating ongoing operation; used for polling or interrupt-driven flow control without CPU busy-waiting.
#WPWrite Protect inputActive-low hardware lock - disables all program/erase when asserted, preventing accidental corruption during power transitions.
I/O[0–7]Bidirectional data busMultiplexed path for commands (1 byte), addresses (up to 4 bytes), and data (2,112 bytes/page) - reduces pin count and PCB routing complexity.

Key Features

Feature Design Value
SLC NAND architectureDelivers deterministic 100K P/E cycles and 10-year retention - essential for mission-critical firmware storage where MLC variability is unacceptable.
COPY BACK command supportEnables page-to-page data relocation within same die without host RAM buffering - reduces system memory footprint and improves wear leveling efficiency.
Standard NAND command setEnsures drop-in compatibility with existing NAND controllers and drivers (e.g., Linux MTD, bare-metal BSPs) without custom firmware adaptation.
Industrial temperature rangeGuaranteed operation from −40°C to +85°C - qualified for automotive infotainment, industrial HMIs, and outdoor IoT gateways.
Multiple package optionsTSOP1 (S), 48-ball VFBGA (D), and 63-ball VFBGA (B) variants allow layout optimization across cost-sensitive, space-constrained, and high-density designs.

Applications

Embedded Boot Storage Firmware Update Buffer

Use Scenario: Storing bootloader and kernel image in headless industrial controllers with no external storage interface.

IC Role / Device Role / Timing Role: Primary nonvolatile code storage accessed at power-on reset; supports XIP-capable controllers via page-read burst mode.

Use Value: 25ns sequential read cycle enables fast instruction fetch; 128MB capacity accommodates dual-image safe-update schemes.

Use Scenario: Holding validated firmware patches prior to atomic flash update in medical diagnostic equipment.

IC Role / Device Role / Timing Role: Dedicated update staging area; leverages COPY BACK to relocate active code while writing new version.

Use Value: Eliminates need for external RAM buffer during update; 250μs page program minimizes downtime during field upgrades.

Media Data Logger Edge AI Model Cache

Use Scenario: Capturing high-resolution sensor logs (vibration, thermal, audio) in predictive maintenance gateways.

IC Role / Device Role / Timing Role: Sequential write buffer with wear-leveling support; spare area stores ECC and timestamp metadata per page.

Use Value: 100K P/E endurance sustains >5 years of daily logging at 100MB/day; 2,112-byte page aligns with common audio frame sizes.

Use Scenario: Caching inference models and calibration weights on battery-powered edge vision sensors.

IC Role / Device Role / Timing Role: Low-power persistent cache; CMOS standby current (10μA) extends battery life during idle periods.

Use Value: 3.3V single-supply simplifies PMIC design; industrial temp rating ensures reliability in outdoor camera enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT29F1G08ABAEAH4-IT:E1Gb x8 SLC NAND, 3.3V, 48-pin TSOP1; identical page/block structure but supports ONFI 2.3 timing modes and has faster 20μs random read.Requires ONFI-compliant controller initialization; better suited for high-throughput streaming where tighter tR timing matters.Select when migrating to ONFI-standardized firmware stacks or when sub-25μs random access is required.
TC58NVG1S3ETA001Gb x8 SLC NAND, 3.3V, 48-pin TSOP1; same density and voltage, but rated only for commercial temp (0°C to +70°C) and lacks COPY BACK command.Not qualified for industrial ambient; incompatible with COPY BACK-based wear leveling or background relocation logic.Acceptable for cost-sensitive consumer devices with controlled environments and simpler firmware.

Compared with W29N01HVSINF, MT29F1G08ABAEAH4-IT:E offers improved random read speed and ONFI 2.3 support but requires controller firmware updates, while TC58NVG1S3ETA00 sacrifices industrial temperature rating and COPY BACK functionality for lower unit cost - making W29N01HVSINF optimal for ruggedized, feature-complete embedded storage.

Availability

W29N01HVSINF is available at Aetrix Electronics and suitable for embedded boot storage, firmware update buffering, and industrial media logging requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W29N01HVSINF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and communications markets since 1987.

The W29N01HVSINF belongs to Winbond's SLC NAND Flash product line, engineered for reliability-critical embedded applications demanding high endurance, long data retention, and industrial-grade thermal performance - not general-purpose data storage.

FAQ

What is the operating voltage range for the W29N01HVSINF?

The W29N01HVSINF operates over a single 2.7V to 3.6V supply. This wide Vcc range allows direct interfacing with common 3.3V I/O domains while maintaining functionality during brown-out conditions down to 2.7V - critical for robust operation in industrial power environments where rail stability cannot be guaranteed.

Does the W29N01HVSINF support hardware write protection?

Yes, the W29N01HVSINF includes a dedicated #WP (Write Protect) pin. When driven low, it disables all program and erase operations regardless of command sequence - providing fail-safe protection against unintended firmware corruption during power-up, reset, or software faults. This function is independent of internal status register settings.

What package type does the W29N01HVSINF use?

The W29N01HVSINF uses a 48-pin TSOP1 (Thin Small Outline Package, Type I) with 12 mm × 20 mm dimensions and standard 0.5 mm lead pitch. This package is widely supported by pick-and-place equipment and PCB design libraries, and matches footprint compatibility with legacy NAND devices for drop-in replacement in existing layouts.

How many program/erase cycles is the W29N01HVSINF rated for?

The W29N01HVSINF is rated for 100,000 program/erase cycles per block. This endurance specification assumes use of 1-bit-per-528-byte ECC correction, as defined in the datasheet. It reflects guaranteed reliability under industrial temperature conditions and enables multi-year service life in applications such as firmware update storage and cyclic data logging.

What is the purpose of the spare area in each page of the W29N01HVSINF?

Each 2,112-byte page of the W29N01HVSINF includes a 64-byte spare area used exclusively for error management - storing ECC parity bits, logical-to-physical block mapping metadata, and bad-block flags. This dedicated region is inaccessible during normal main-area read/write operations and is managed transparently by the host controller's FTL layer.

W29N01HVSINF Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tray
Product Status:
Active
Programmable:
Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NAND (SLC)
Memory Size:
1Gbit
Memory Organization:
128M x 8
Memory Interface:
-
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP

W29N01HVSINF FAQ

1.How can I place an order for W29N01HVSINF through Aetrix?

Please submit a Request for Quotation (RFQ) for W29N01HVSINF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W29N01HVSINF reliable?

The price and inventory of W29N01HVSINF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HVSINF is usually 5 days.

3.What payment methods are accepted for W29N01HVSINF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HVSINF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W29N01HVSINF?

W29N01HVSINF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W29N01HVSINF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W29N01HVSINF?

For technical support, including W29N01HVSINF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HVSINF requirements.

6.How does Aetrix verify that W29N01HVSINF is sourced from the original manufacturer or authorized distributors?

All W29N01HVSINF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HVSINF meets industry standards.

7.What is the process for return or replacement of W29N01HVSINF?

All W29N01HVSINF units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HVSINF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W29N01HVSINF part is unused and in its original packaging.

Return procedure for W29N01HVSINF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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