Winbond Electronics Corporation W29N01HWBINF TR

Overview

W29N01HWBINF TR from Winbond is a 1G-bit (128MB) SLC NAND Flash memory operating at 1.7–1.95V, organized into 1,024 erasable blocks of 135,168 bytes each (64 pages × 2,112 bytes/page), with 2,048-byte main data + 64-byte spare area per page. It supports x8/x16 bus width, ONFI-compatible command set, and is used in embedded boot storage, firmware code shadowing, and industrial data logging where low-power, high-endurance nonvolatile storage is required.

For engineers reviewing the W29N01HWBINF TR datasheet, W29N01HWBINF TR pinout, W29N01HWBINF TR application, or W29N01HWBINF TR equivalent, key selection criteria include 100,000 program/erase cycles, 10-year data retention, TSOP1/VFBGA packaging options, 25μs random read latency, and support for Copy Back and Parameter Page commands.

Technical Context

This device implements a standard NAND Flash architecture with multiplexed I/O bus, using CLE/ALE control signals to latch commands, addresses, and data on shared pins. Its internal logic includes a status register, data register, column/row decoders, and high-voltage generator for program/erase operations.

It operates in five primary modes-Read, Program, Erase, Copy Back, and Reset-each governed by specific command sequences (e.g., 00h-30h for page read, 80h-10h for page program) and validated timing windows (tREA = 25ns, tPROG = 250μs typ., tBERS = 2ms typ.). Write protection is enforced via active-low #WP, and device status is monitored via open-drain RY/#BY.

Key Specifications

Pinout & Package

W29N01HWBINF TR is packaged in a 63-ball VFBGA (Package Code B) with x8 bus configuration, measuring 9 mm × 11 mm × 1.0 mm (max). All Vcc and Vss balls must be connected; DNU and N.C. balls are not bonded and must remain unconnected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Compared with W29N01HWBINF TR, MT29F1G08ABAEAH4-IT:E requires level-shifting and lacks modern ONFI features, while TC58CVG1S3HRAIJ trades 50% endurance for marginally lower cost-making W29N01HWBINF TR the optimal choice for long-life, standards-compliant 1.8V embedded storage.

Availability

W29N01HWBINF TR is available at Aetrix Electronics and suitable for industrial firmware storage, embedded boot memory, and telematics data logging requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for W29N01HWBINF TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM for industrial, automotive, and communications markets.

The W29N01HZ/WxxNF product line delivers high-reliability SLC NAND Flash optimized for embedded systems demanding deterministic endurance, wide temperature operation, and ONFI-standard interoperability-targeting boot, firmware, and critical data storage.

FAQ

What is the operating voltage range for W29N01HWBINF TR?

W29N01HWBINF TR operates from 1.7 V to 1.95 V, with typical performance characterized at 1.8 V. This narrow 1.8 V domain eliminates need for external voltage regulators in modern low-power SoC designs and ensures compatibility with I/O banks of ARM Cortex-A/M series processors. The device draws only 13 mA during active read and 10 µA in CMOS standby, supporting energy-efficient operation.

Does W29N01HWBINF TR support the ONFI standard?

Yes, W29N01HWBINF TR supports ONFI 2.3 via its READ PARAMETER PAGE (ECh) command, which returns standardized timing parameters, geometry descriptors, and feature flags. This enables automatic controller configuration without hard-coded timing values, improving design portability across platforms and simplifying qualification for new host SoCs.

What package type is used by W29N01HWBINF TR?

W29N01HWBINF TR uses a 63-ball VFBGA package (Package Code B) with x8 bus interface, measuring 9 mm × 11 mm × 1.0 mm max height. It is distinct from the 48-ball VFBGA (Code D) and 48-pin TSOP1 (Code S) variants-this specific ball count and layout ensure mechanical and thermal compatibility with high-density industrial PCB layouts requiring fine-pitch routing.

How many program/erase cycles does W29N01HWBINF TR guarantee?

W29N01HWBINF TR guarantees 100,000 program/erase cycles when used with 4-bit-per-528-byte ECC correction, as specified in the datasheet. This endurance level is achieved through Single-Level Cell (SLC) architecture and is validated across the full industrial plus temperature range (-40°C to +105°C), making it suitable for applications requiring frequent firmware updates over a decade-long service life.

What is the purpose of the spare area in each page of W29N01HWBINF TR?

Each 2,112-byte page of W29N01HWBINF TR includes a 64-byte spare area used exclusively for error management: storing ECC parity bits (e.g., BCH 4-bit), bad-block markers, logical-to-physical mapping metadata, and wear-leveling counters. This dedicated region is inaccessible during normal main-area reads/writes and is managed transparently by the host FTL or controller firmware to maintain data integrity across the full 100K-cycle lifetime.