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Winbond Electronics Corporation W29N01HZBINA
- Part No.:
- W29N01HZBINA
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 63-VFBGA
- Datasheet:
-
W29N01HZBINA.pdf
- Description:
- IC FLASH 1GBIT 63-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,903
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Product details
Overview
W29N01HZBINA from Winbond is a 1G-bit, 1.8V SLC NAND Flash memory in 48-ball VFBGA (x8) package, organized as 1024 blocks × 64 pages × 2112 bytes/page (2048B main + 64B spare), supporting standard NAND command set including Copy Back, with 100,000 program/erase cycles and 10-year data retention - used for code shadowing, embedded media storage, and firmware logging in space-constrained industrial systems.
For engineers reviewing the W29N01HZBINA datasheet, W29N01HZBINA pinout, W29N01HZBINA application, or W29N01HZBINA equivalent, key selection criteria include its 1.7–1.95V supply range, 25μs random read latency, 250μs typical page program time, x8 bus interface, and industrial temperature rating (–40°C to +85°C).
Technical Context
This SLC NAND device implements a multiplexed 8-bit I/O bus with five dedicated control signals (CLE, ALE, #CE, #WE, #RE) to manage command, address, and data latching via edge-triggered protocols. Its internal architecture includes a 2048-byte page buffer, column/row decoders, high-voltage generator, and status register accessible via READ STATUS (70h) command.
It supports ONFI-compatible operation with RY/#BY open-drain ready/busy signaling, #WP-driven hardware write protection, and invalid block management per JEDEC-standard bad-block handling. The device requires no external Vpp and operates fully within a single 1.8V supply rail.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 G-bit (128 MB total capacity), enabling compact firmware/image storage without external expansion. |
| Supply Voltage | 1.7–1.95 V - compatible with modern low-voltage SoC I/O domains and eliminates need for level shifters. |
| Page Size | 2112 bytes (2048B main + 64B spare) - supports industry-standard ECC schemes (e.g., 1-bit/528-byte) for reliable error correction. |
| Block Size | 135,168 bytes (64 pages × 2112 B) - defines minimum erase granularity for wear leveling and FTL mapping. |
| Random Read | 25 μs - determines latency for small-code fetches or configuration lookups in boot-time operations. |
| Page Program | 250 μs (typ.) - sets write throughput ceiling for firmware updates or log writes in real-time systems. |
| Endurance | 100,000 P/E cycles - ensures multi-year reliability in frequently updated embedded applications like telemetry logging. |
| Data Retention | 10 years at 85°C - guarantees long-term validity of stored calibration data or security keys in unpowered storage. |
Pinout & Package
W29N01HZBINA uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package, 6.0 × 8.0 mm, 0.5 mm pitch, marked with package code "D" and configured for x8 bus operation. All Vcc and Vss balls must be connected; DNU balls are unconnected and NC balls may be left floating or tied.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable | Active-low chip select: drives device into standby (10 μA) when high; enables command/address/data transfer when low. |
| CLE | Command Latch Enable | Signals that next I/O byte is a command (e.g., 00h, 80h); latched on rising #WE edge. |
| ALE | Address Latch Enable | Signals that next I/O byte is an address; latched on rising #WE edge for column/row decoding. |
| #WE | Write Enable | Rising edge latches CLE/ALE-controlled inputs (commands, addresses, data) into internal registers. |
| #RE | Read Enable | Falling edge initiates serial output from data register; tREA = 25 ns max delay before valid I/O data appears. |
| RY/#BY | Ready/Busy Output | Open-drain signal: low = active operation (read/program/erase in progress); high = ready for next command. |
| #WP | Write Protect Input | Active-low hardware lock: disables all program/erase commands when asserted, preventing accidental corruption. |
| I/O[0–7] | Bidirectional Data Bus | Multiplexed path for commands (8-bit), addresses (4 cycles × 8-bit), and page data (2112 bytes). |
Key Features
| Feature | Design Value |
|---|---|
| SLC NAND Architecture | Delivers higher endurance (100K cycles) and longer data retention (10 yr @ 85°C) vs. MLC/TLC, critical for industrial firmware storage. |
| Copy Back Command Support | Enables internal page-to-page data relocation without host RAM buffering - reduces system memory overhead during wear leveling. |
| ONFI-Compatible Interface | Ensures interoperability with standard NAND controllers and FTL stacks compliant with ONFI 2.x timing and command definitions. |
| Low-Power Active Operation | 13 mA read / 10 mA program-erase current at 1.8 V enables battery-backed or energy-harvested embedded designs. |
| Industrial Temperature Range | –40°C to +85°C operation validated across full voltage and timing margins - suitable for automotive under-hood and factory automation. |
Applications
| Industrial Firmware Storage | Embedded Media Buffering |
|---|---|
Use Scenario: Storing bootloader, FPGA bitstreams, and field-upgradable firmware images in programmable logic controllers (PLCs) and HMIs. IC Role / Device Role / Timing Role: Nonvolatile code storage with fast random read (25 μs) for rapid boot sequence execution and secure update staging. Use Value: Eliminates need for external SPI NOR + parallel NAND combo; single-chip 128 MB capacity reduces BOM count and PCB area. |
Use Scenario: Capturing sensor logs, audio snippets, or diagnostic video clips in portable medical devices and IoT edge nodes. IC Role / Device Role / Timing Role: High-throughput sequential write buffer (250 μs/page program) with built-in spare area for ECC metadata. Use Value: Enables deterministic write latency and guaranteed 10-year retention for regulatory-compliant audit trails without DRAM caching. |
| Code Shadowing to RAM | Telemetry Data Logger |
Use Scenario: Loading executable application code from NAND into SRAM/DDR at system startup in network routers and baseband processors. IC Role / Device Role / Timing Role: High-density, low-latency read source feeding instruction cache lines via DMA-based burst reads. Use Value: 25 ns sequential read cycle supports sustained >40 MB/s read bandwidth - sufficient for fast shadowing of multi-MB firmware binaries. |
Use Scenario: Long-duration environmental monitoring in remote infrastructure (e.g., smart grid sensors, pipeline monitors) with infrequent power. IC Role / Device Role / Timing Role: Ultra-low standby current (10 μA) preserves battery life between periodic wake-ups for timestamped data writes. Use Value: Enables >5-year battery operation using coin cells or energy harvesters while maintaining full 128 MB logging capacity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4 | 1 G-bit, 3.3 V supply, x8 interface, 48-pin TSOP1 package; lacks Copy Back command support. | Requires level-shifting for 1.8 V hosts; higher operating voltage increases system power and thermal load. | Choose only if legacy 3.3 V controller compatibility is mandatory and Copy Back is unused. |
| TC58CVG1S3HRAIJ | 1 G-bit, 1.8 V, x8, 48-ball VFBGA; supports ONFI 2.3 but specifies 30 μs random read (vs. 25 μs for W29N01HZBINA). | Slightly lower read performance impacts boot time in latency-sensitive applications. | Select when ONFI 2.3 advanced features (e.g., synchronous timing mode) are required and 5 μs read penalty is acceptable. |
Compared with MT29F1G08ABAEAH4 and TC58CVG1S3HRAIJ, W29N01HZBINA offers optimal balance of 1.8 V operation, 25 μs random read, Copy Back support, and industrial temperature grade - making it preferred for new 1.8 V embedded designs requiring firmware robustness and low-power operation.
Availability
W29N01HZBINA is available at Aetrix Electronics and suitable for industrial firmware storage, embedded media buffering, and telemetry data logging requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.
Supply support for W29N01HZBINA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.
The W29N series targets cost-sensitive, space-constrained embedded systems needing reliable, low-voltage NAND storage - designed specifically for code execution, firmware updates, and persistent data logging in harsh environments.
FAQ
What is the operating voltage range for W29N01HZBINA?
W29N01HZBINA operates over a strict 1.7 V to 1.95 V supply range, optimized for 1.8 V nominal systems. Operation outside this window risks data corruption or functional failure; no internal voltage regulation is provided, so external LDO stability and ripple must be maintained within ±3%.
Does W29N01HZBINA support the ONFI standard?
Yes, W29N01HZBINA supports ONFI 2.x-compatible timing and command protocols, including standard commands (00h, 30h, 80h, 10h, 60h, D0h) and optional features like Copy Back (00h/35h, 85h/10h). Pinout and timing parameters align with ONFI 2.2/2.3 specifications for interoperability with compliant controllers.
What is the page size and spare area allocation for W29N01HZBINA?
W29N01HZBINA has a 2112-byte page size: 2048 bytes for main data storage and 64 bytes reserved as spare area. This spare region is intended for ECC parity bits, logical-to-physical mapping metadata, and bad-block markers - essential for robust FTL implementation in host software or dedicated controllers.
How many program/erase cycles does W29N01HZBINA guarantee?
W29N01HZBINA guarantees 100,000 program/erase cycles per block when used with 1-bit-per-528-byte ECC correction, as specified in the datasheet. This endurance rating assumes proper wear-leveling algorithms are implemented in the host controller or FTL layer to distribute writes evenly across physical blocks.
What package type and ball count does W29N01HZBINA use?
W29N01HZBINA uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch and 6.0 × 8.0 mm footprint, designated by package code "D". It is configured for x8 bus operation and includes dedicated #WP and RY/#BY pins for hardware write protection and operation status monitoring.
W29N01HZBINA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 63-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 25 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 63-VFBGA (9x11)
W29N01HZBINA FAQ
1.How can I place an order for W29N01HZBINA through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N01HZBINA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N01HZBINA reliable?
The price and inventory of W29N01HZBINA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HZBINA is usually 5 days.
3.What payment methods are accepted for W29N01HZBINA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HZBINA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N01HZBINA?
W29N01HZBINA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N01HZBINA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N01HZBINA?
For technical support, including W29N01HZBINA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HZBINA requirements.
6.How does Aetrix verify that W29N01HZBINA is sourced from the original manufacturer or authorized distributors?
All W29N01HZBINA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HZBINA meets industry standards.
7.What is the process for return or replacement of W29N01HZBINA?
All W29N01HZBINA units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HZBINA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N01HZBINA part is unused and in its original packaging.
Return procedure for W29N01HZBINA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W29N01HZBINA Tags
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