Winbond Electronics Corporation W29N01HZBINA TR

Overview

W29N01HZBINA TR from Winbond is a 1G-bit (128MB) SLC NAND Flash memory operating at 1.7–1.95V, organized into 1,024 blocks of 64 pages each (2,112 bytes/page), with x8 bus interface and TSOP1-48 packaging. It delivers 25ns sequential read access, 250μs typical page program time, and supports standard NAND commands including Copy Back, Read ID (90h), and Read Parameter Page (ECh). It is used in embedded boot storage, firmware code shadowing, and media data logging in space-constrained industrial systems.

For engineers reviewing the W29N01HZBINA TR datasheet, W29N01HZBINA TR pinout, W29N01HZBINA TR application, or W29N01HZBINA TR equivalent, key selection criteria include 1.8V single-supply operation, 100,000 program/erase cycles with 1-bit/528-byte ECC, 10-year data retention, ONFI-compatible control interface (CLE/ALE/#CE/#WE/#RE), and TSOP1-48 mechanical compatibility for legacy PCB layouts.

Technical Context

This device implements a standard asynchronous NAND interface with multiplexed 8-bit I/O bus, using CLE and ALE to distinguish command, address, and data phases on the same pins. Its internal architecture includes a 2,112-byte data register, column/row decoders, high-voltage generator, and status register - enabling full command execution (e.g., PAGE READ 00h–30h, BLOCK ERASE 60h–D0h) without external timing controllers.

It operates in three primary modes: Read (with random or sequential output), Program (page-level with optional Random Data Input 85h), and Erase (block-level only). Write Protect (#WP) and Ready/Busy (RY/#BY) provide hardware-level operation control and real-time status feedback, while #CE-driven standby reduces current to 10μA.

Key Specifications

Pinout & Package

W29N01HZBINA TR uses a 48-pin TSOP1 (Package Code S, 12×20 mm) with standard NAND control and I/O signals. All Vcc and Vss pins must be externally connected; N.C. pins are unconnected internally and may be left floating or tied to ground per layout best practice.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND flash memory applications.

Compared with MT29F1G08ABAEAH4-IT:E and TC58CVG1S3HRAIJ, W29N01HZBINA TR uniquely combines 1.8V operation, industrial temperature rating, ONFI parameter page support, and 10-year retention - making it the only drop-in option for new 1.8V industrial designs requiring full NAND feature compliance.

Availability

W29N01HZBINA TR is available at Aetrix Electronics and suitable for embedded boot storage, firmware code shadowing, and industrial data logging requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for W29N01HZBINA TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND flash, SRAM, and mobile DRAM, serving industrial, automotive, and communications markets since 1987.

W29N01HZBINA TR belongs to Winbond's W29N01HZ/WxxNA family of SLC NAND flash devices, engineered specifically for high-reliability, low-voltage embedded storage where endurance, data retention, and thermal robustness outweigh cost-per-bit considerations.

FAQ

What is the operating voltage range for W29N01HZBINA TR?

W29N01HZBINA TR operates from 1.7 V to 1.95 V, with nominal 1.8 V supply. This narrow range ensures compatibility with modern low-power SoCs and eliminates the need for external voltage translation. The device draws only 13 mA during active read and drops to 10 μA in CMOS standby - critical for battery-sensitive applications. Operation outside this range may cause functional failure or accelerated wear.

Does W29N01HZBINA TR support ONFI commands?

Yes, W29N01HZBINA TR supports ONFI 1.0–compatible commands including READ PARAMETER PAGE (ECh), READ ID (90h), and COPY BACK (00h–35h / 85h–10h). These are explicitly documented in the command table and timing diagrams of its datasheet. The device does not implement ONFI 2.x+ features like NV-DDR interface or advanced status reporting, but its core command set ensures interoperability with standard NAND controllers.

What is the page and block structure of W29N01HZBINA TR?

W29N01HZBINA TR organizes its 128 MB array into 1,024 erasable blocks, each containing 64 programmable pages. Each page is 2,112 bytes (2,048 data + 64 spare), and each block totals 135,168 bytes. This structure directly supports ECC schemes requiring per-page syndrome storage and enables efficient wear leveling algorithms. The spare area is mandatory for storing bad block markers and ECC metadata.

How is write protection implemented on W29N01HZBINA TR?

W29N01HZBINA TR uses a dedicated #WP (Write Protect) pin: when driven low, it disables all program and erase operations regardless of command sequence - providing hardware-level immunity to software glitches or power brownouts. The pin is active-low and must be pulled high (via resistor or controller GPIO) during normal operation. Unlike software-based locks, #WP remains effective even during reset or initialization sequences.

What package type does W29N01HZBINA TR use?

W29N01HZBINA TR uses a 48-pin TSOP1 package (Package Code S, 12×20 mm), as confirmed by ordering information and Figure 3-1 in the datasheet. This package is pin-compatible with legacy NAND devices and supports standard reflow profiles. It is distinct from VFBGA or WLCSP variants in the same family (e.g., W29N01HZBINA D/B/Y), which share the same electrical specs but differ mechanically.