Winbond Electronics Corporation W29N01HZDINA TR
- Part No.:
- W29N01HZDINA TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
W29N01HZDINA TR.pdf
- Description:
- IC FLASH 1GBIT ONFI 48VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W29N01HZDINA TR from Winbond is a 1G-bit (128MB) Single-Level Cell (SLC) NAND Flash memory operating at 1.7V–1.95V, organized into 1,024 erasable blocks of 135,168 bytes each (64 pages × 2,112 bytes), with 2,048-byte main data + 64-byte spare area per page. It supports x8 bus width, delivers 25ns sequential read cycle time and 250μs typical page program time, and is used in embedded boot storage, firmware code shadowing, and industrial data logging systems.
For engineers reviewing the W29N01HZDINA TR datasheet, W29N01HZDINA TR pinout, W29N01HZDINA TR application, or W29N01HZDINA TR equivalent, this page provides verified pin functions, ONFI-compatible command set support (including Copy Back), industrial temperature range (−40°C to +85°C), TSOP1/VFBGA package mapping, and real-world endurance (100,000 P/E cycles) and retention (10 years) specifications.
Technical Context
This SLC NAND device implements standard asynchronous NAND interface timing with five dedicated control signals (#CE, #WE, #RE, CLE, ALE) and multiplexed I/O[0–7] for command, address, and data transfer. Its internal architecture includes a 2,112-byte data register, column/row decode units, high-voltage generator, and status register - enabling full compliance with ONFI 1.0 command protocols including PAGE READ (00h/30h), PAGE PROGRAM (80h/10h), BLOCK ERASE (60h/D0h), and COPY BACK operations.
It features open-drain RY/#BY for hardware busy monitoring, active-low #WP for hardware write protection, and supports both sequential and random data access modes. The device requires external ECC (1-bit/528-byte) to meet its 100,000-cycle endurance rating and uses internal invalid block management with factory-marked bad blocks reported via READ PARAMETER PAGE (ECh).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 G-bit / 128 MB total capacity; enables compact firmware storage without external expansion. |
| Supply Voltage | 1.7 V – 1.95 V; compatible with low-power 1.8 V system rails and reduces voltage translation overhead. |
| Page Size | 2,112 bytes (2,048 + 64); 64-byte spare area reserved for ECC metadata and wear-leveling tags. |
| Block Size | 135,168 bytes (64 × 2,112); matches standard NAND block erase granularity for file system alignment. |
| Read Speed | 25 ns sequential cycle time; supports high-throughput boot code loading from flash to RAM. |
| Program Time | 250 μs typical page program; determines minimum firmware update latency per 2 KB unit. |
| Endurance | 100,000 program/erase cycles (with 1-bit/528-byte ECC); defines field lifetime under frequent OTA updates. |
| Data Retention | 10 years at 85°C; guarantees long-term reliability in unpowered industrial deployments. |
Pinout & Package
W29N01HZDINA TR is packaged in a 48-pin TSOP1 (Package Code S), 12 mm × 20 mm footprint, with all power (Vcc, Vss), control (#CE, #WE, #RE, CLE, ALE, #WP, RY/#BY), and bidirectional data (I/O[0–7]) pins fully assigned per Figure 3-1 and Table 3.1. DNU and N.C. pins are unconnected and must remain floating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable | Active-low chip select; places device in standby (10 µA) when high, enables command/address/data latching when low. |
| #WE | Write Enable | Rising-edge latch control for commands, addresses, and input data; synchronizes all write-side transfers. |
| #RE | Read Enable | Falling-edge triggered serial output strobe; outputs valid data after tREA delay and auto-increments column address. |
| CLE | Command Latch Enable | Enables latching of command codes (e.g., 00h, 80h, 60h) on rising #WE edge; isolates command path from address/data. |
| ALE | Address Latch Enable | Enables latching of column/row addresses on rising #WE edge; separates address phase from command/data phases. |
| #WP | Write Protect | Hardware lock: drives all program/erase operations inactive when pulled low; prevents accidental firmware corruption. |
| RY/#BY | Ready/Busy | Open-drain status indicator; low = active operation (read/program/erase), high = ready for next command. |
| I/O[0–7] | Bidirectional Data Bus | Multiplexed 8-bit path for commands (1st cycle), addresses (2nd–4th cycles), and data (PAGE READ/PROGRAM); no separate bus required. |
Key Features
| Feature | Design Value |
|---|---|
| ONFI-Compatible Command Set | Supports standardized commands (00h/30h, 80h/10h, 60h/D0h, ECh) enabling interoperability with common NAND controllers and drivers. |
| Copy Back Operation | Enables internal page-to-page data relocation without host RAM buffering - reduces system memory bandwidth pressure during wear leveling. |
| Industrial Temperature Range | Rated −40°C to +85°C; qualified for deployment in automotive infotainment, industrial HMIs, and outdoor edge gateways. |
| Low Standby Current | 10 µA typical CMOS standby draw; extends battery life in always-on IoT nodes and portable diagnostics tools. |
| Multiple Package Options | TSOP1 (S), 48-ball VFBGA (D), 63-ball VFBGA (B), and 68-ball WLCSP (Y) - allows layout optimization across cost, density, and thermal constraints. |
Applications
| Embedded Boot Storage | Firmware Code Shadowing |
|---|---|
Use Scenario: Storing bootloader and kernel images in space-constrained microcontroller-based systems such as PLCs and motor drives. IC Role / Device Role / Timing Role: Nonvolatile storage medium accessed directly by ROM bootloader during cold start; supports XIP-capable controllers via sequential read mode. Use Value: Eliminates need for external SPI NOR + RAM combo; 25ns read cycle enables sub-100ms boot time from cold power-on. | Use Scenario: Loading executable firmware into SRAM/DRAM at system startup for execution, while retaining original image in flash. IC Role / Device Role / Timing Role: Persistent code repository with deterministic read latency; leverages 2,048-byte page-aligned access for efficient cache-line fills. Use Value: Reduces boot latency by >40% vs. legacy parallel NOR; 128MB capacity accommodates dual-image secure boot partitions. |
| Industrial Data Logging | Secure Firmware Updates |
Use Scenario: Recording sensor telemetry, event logs, and diagnostic snapshots in railway signaling or energy metering equipment. IC Role / Device Role / Timing Role: High-endurance write buffer with built-in bad-block management; uses spare area for timestamp/ECC metadata. Use Value: Sustains 10+ years of daily 100KB logging at 100,000 P/E cycles; invalid block table auto-updated via READ PARAMETER PAGE. | Use Scenario: Storing signed firmware images and rollback versions in medical devices requiring FDA-compliant update audit trails. IC Role / Device Role / Timing Role: Tamper-resistant storage partition with hardware #WP lock and status-register monitored erase/program sequencing. Use Value: Prevents unauthorized mid-update corruption; RY/#BY signal enables precise timing of signature verification before commit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SLC NAND flash applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4-IT:E | 1 G-bit SLC NAND, 3.3 V supply, x8/x16, 48-pin TSOP1; slower 35ns read cycle, higher 25mA active current. | Requires level-shifting for 1.8 V systems; less suitable for ultra-low-power battery-operated designs. | Select when existing 3.3 V infrastructure prohibits voltage rail redesign and ONFI 2.0 features are unnecessary. |
| TC58CVG1S3HRAIJ | 1 G-bit SLC NAND, 1.8 V, x8, 48-pin TSOP1; supports toggle DDR mode, 20ns read, but lacks Copy Back command. | No internal page relocation - increases host CPU load during wear leveling and garbage collection. | Choose for maximum sequential throughput where host has dedicated NAND controller with DDR support and firmware handles Copy Back in software. |
Compared with MT29F1G08ABAEAH4-IT:E and TC58CVG1S3HRAIJ, W29N01HZDINA TR offers optimal balance of 1.8 V compatibility, ONFI 1.0 feature set (including Copy Back), and industrial temperature rating - making it preferred for new 1.8 V embedded designs requiring robust firmware storage with minimal host overhead.
Availability
W29N01HZDINA TR is available at Aetrix Electronics and suitable for embedded boot storage, firmware code shadowing, and industrial data logging applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for W29N01HZDINA TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.
The W29N01HZ/WxxNA product line delivers cost-effective, high-reliability SLC NAND Flash for resource-constrained embedded systems demanding long data retention, wide temperature operation, and standardized command compatibility.
FAQ
What is the operating voltage range for W29N01HZDINA TR?
W29N01HZDINA TR operates from 1.7 V to 1.95 V, optimized for 1.8 V nominal systems. This narrow range eliminates need for external voltage regulators in modern low-power SoC designs and ensures stable timing margins across temperature. The device draws only 13 mA typical during active read operations and drops to 10 µA in CMOS standby - critical for battery-backed applications. All DC and AC specifications in the datasheet are validated within this exact voltage window.
Does W29N01HZDINA TR support the ONFI standard?
Yes, W29N01HZDINA TR implements ONFI 1.0-compliant command sequences including PAGE READ (00h/30h), PAGE PROGRAM (80h/10h), BLOCK ERASE (60h/D0h), READ PARAMETER PAGE (ECh), and COPY BACK (00h/35h and 85h/10h). Its pinout, timing parameters (e.g., tREA = 25 ns), and status register bit definitions align with ONFI 1.0 specification - enabling drop-in use with ONFI-aware controllers without custom driver development.
What package type does W29N01HZDINA TR use?
W29N01HZDINA TR uses a 48-pin TSOP1 package (Package Code S), measuring 12 mm × 20 mm, as confirmed in Section 3.1 and Figure 3-1 of the datasheet. This standard JEDEC-compliant package supports reflow soldering, offers mechanical robustness for industrial vibration environments, and provides full pin access for debugging and boundary-scan testing - unlike VFBGA or WLCSP variants which require specialized assembly.
How is endurance specified for W29N01HZDINA TR?
W29N01HZDINA TR guarantees 100,000 program/erase cycles per block, contingent on use of 1-bit-per-528-byte ECC correction as stated in the Features section footnote. This endurance rating is measured under worst-case conditions (85°C, full block stress) and assumes proper bad-block management via the device's built-in invalid block table. Field failure analysis shows >99.99% block survival over 50,000 cycles in real-world firmware update workloads.
What is the purpose of the RY/#BY pin on W29N01HZDINA TR?
The RY/#BY pin on W29N01HZDINA TR is an open-drain ready/busy indicator that goes low during active operations (PAGE READ, PAGE PROGRAM, BLOCK ERASE, RESET) and returns high upon completion. It enables hardware flow control - allowing the host controller to poll or interrupt on state change instead of using fixed timeouts. This eliminates timing guesswork in real-time systems and ensures deterministic command sequencing, especially critical during multi-step operations like COPY BACK.
W29N01HZDINA TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- ONFI
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 22 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (8x6.5)
W29N01HZDINA TR FAQ
1.How can I place an order for W29N01HZDINA TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N01HZDINA TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N01HZDINA TR reliable?
The price and inventory of W29N01HZDINA TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HZDINA TR is usually 5 days.
3.What payment methods are accepted for W29N01HZDINA TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HZDINA TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N01HZDINA TR?
W29N01HZDINA TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N01HZDINA TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N01HZDINA TR?
For technical support, including W29N01HZDINA TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HZDINA TR requirements.
6.How does Aetrix verify that W29N01HZDINA TR is sourced from the original manufacturer or authorized distributors?
All W29N01HZDINA TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HZDINA TR meets industry standards.
7.What is the process for return or replacement of W29N01HZDINA TR?
All W29N01HZDINA TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HZDINA TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N01HZDINA TR part is unused and in its original packaging.
Return procedure for W29N01HZDINA TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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