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Winbond Electronics Corporation W29N01HZDINF

Name: W29N01HZDINF
Brand: Winbond Electronics Corporation
SKU: W29N01HZDINF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W29N01HZDINF

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 48-VFBGA

Datasheet:: W29N01HZDINF.pdf

Description:: IC FLASH 1GBIT 48-VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W29N01HZDINF from Winbond is a 1G-bit (128MB) Single-Level Cell (SLC) NAND Flash memory operating at 1.7–1.95V, organized into 1,024 erasable blocks of 135,168 bytes each (64 pages × 2,112 bytes/page), with 2,048-byte main data + 64-byte spare area per page. It supports x8/x16 bus width and is used in embedded boot storage, firmware code shadowing, and industrial solid-state data logging.

For engineers reviewing the W29N01HZDINF datasheet, W29N01HZDINF pinout, W29N01HZDINF application, or W29N01HZDINF equivalent, key selection criteria include its 100,000 program/erase cycles, 10-year data retention, 25μs random read latency, 250μs typical page program time, and support for ONFI-compatible command set including Copy Back and Parameter Page read.

Technical Context

This SLC NAND device implements standard asynchronous NAND interface timing with five dedicated control signals (#CE, #RE, #WE, CLE, ALE) and open-drain RY/#BY status output. It uses multiplexed I/O[0–7] for command, address, and data transfer - no internal address/data bus separation.

Internal architecture includes a 2,112-byte data register, column/row decoders, high-voltage generator, and status register with bit-defined error and operation flags. Command execution follows strict cycle sequencing: CLE-high for commands, ALE-high for addresses, and low-#CE with toggling #WE for latching.

Key Specifications

Parameter	Value and Actual Design Meaning
Density	1 G-bit / 128 MB total capacity; enables compact firmware storage without external expansion.
Supply Voltage	1.7 V to 1.95 V; compatible with low-power 1.8 V system rails and reduces voltage translation overhead.
Page Size	2,112 bytes (2,048 + 64); 64-byte spare area reserved for ECC metadata and bad-block management.
Block Size	135,168 bytes (64 × 2,112); matches common file-system erase-unit alignment for YAFFS2/JFFS2.
Endurance	100,000 P/E cycles (with 4-bit/528-byte ECC); suitable for frequent firmware update or logging workloads.
Data Retention	10 years at 85°C; validated for industrial temperature operation without refresh.
Random Read	25 μs max; enables fast instruction fetch during code shadowing from NAND to RAM.
Page Program	250 μs typical; defines minimum write granularity and impacts log-structured filesystem write latency.

Pinout & Package

W29N01HZDINF is packaged in a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) with package code D, footprint 6.0 mm × 8.0 mm × 1.0 mm (ball pitch 0.5 mm), compliant with JEDEC MO-276AA. Pin assignments are defined for both x8 and x16 configurations; this variant uses x8 bus width.

Pin/Terminal	Circuit Role	Design Meaning
#CE	Chip Enable (active low)	Asserted to enable device; places I/O in high-Z when deasserted, reducing system bus contention.
#RE	Read Enable (active low)	Controls serial data output from data register; each pulse increments column address for sequential reads.
#WE	Write Enable (active low)	Latches command, address, or data on rising edge; synchronizes all input transfers to NAND controller timing.
CLE	Command Latch Enable	When high, routes I/O data to command register; required before issuing 00h, 80h, 60h, etc.
ALE	Address Latch Enable	When high, routes I/O data to address register; used for 4-cycle addressing (column + row).
RY/#BY	Ready/Busy (open-drain)	Active-low indicates ongoing program/erase/read; eliminates need for polling status register in time-critical paths.
#WP	Write Protect (active low)	Hardware lock preventing accidental program/erase; critical for bootloader partition protection.
I/O[0–7]	Bidirectional Data Bus (x8)	Multiplexed path for commands (e.g., 00h), addresses (A0–A27), and data (main + spare); reduces pin count vs parallel NOR.
Vcc	Power Supply	1.7–1.95 V core supply; all Vcc balls must be connected - floating supply pins cause functional failure.
Vss	Ground	Reference for all I/O and internal logic; multiple Vss balls ensure low-impedance return path for switching noise.

Key Features

Feature	Design Value
ONFI-Compatible Command Set	Supports standardized commands (e.g., ECh for Parameter Page) enabling interoperability with generic NAND controllers and Linux MTD drivers.
Copy Back Operation	Enables page-to-page move within same die without host RAM buffering - reduces wear on external memory and accelerates garbage collection.
Program/Erase Suspend	Allows interrupting long block erase to service high-priority read requests - essential for real-time response in industrial HMI systems.
Hardware Write Protection	#WP pin provides fail-safe lockdown of critical partitions (e.g., bootloader) independent of software state or power glitches.
Industrial Temperature Range	-40°C to +85°C operation confirmed per datasheet Table 15.1; qualified for deployment in uncontrolled ambient environments.

Applications

Industrial Boot Storage	Firmware Update Module
Use Scenario: Storing U-Boot or Coreboot images in headless industrial gateways where NOR flash density is insufficient. IC Role / Device Role / Timing Role: Primary nonvolatile boot medium accessed via eMMC/NAND controller during cold start; delivers first-stage loader to SRAM. Use Value: 128 MB capacity accommodates full bootloader + recovery image; 25 μs random read ensures sub-100 ms boot latency.	Use Scenario: Field-upgradable firmware storage in medical diagnostic devices requiring signed, versioned updates with rollback capability. IC Role / Device Role / Timing Role: Dual-bank storage partition holding active and candidate firmware images; managed by secure bootloader. Use Value: 100,000 P/E cycles support >500 field updates over product lifetime; hardware #WP prevents corruption during power loss.
Embedded Data Logger	Edge AI Inference Cache
Use Scenario: Continuous sensor data capture in railway signaling equipment operating at -40°C to +85°C with no maintenance window. IC Role / Device Role / Timing Role: Circular buffer for timestamped CAN/RS-485 telemetry; written sequentially with background wear leveling. Use Value: 10-year data retention guarantees integrity of incident logs without battery-backed SRAM; ECC handles bit flips in harsh EMI environments.	Use Scenario: Caching pre-processed neural network weights and calibration tables in autonomous mobile robots with intermittent cloud sync. IC Role / Device Role / Timing Role: High-reliability offload storage for model parameters; accessed via DMA-controlled NAND controller during inference startup. Use Value: 250 μs page program enables rapid weight swapping between tasks; SLC endurance avoids degradation from frequent retraining cycles.

Industrial Boot Storage

Firmware Update Module

Use Scenario: Storing U-Boot or Coreboot images in headless industrial gateways where NOR flash density is insufficient.

IC Role / Device Role / Timing Role: Primary nonvolatile boot medium accessed via eMMC/NAND controller during cold start; delivers first-stage loader to SRAM.

Use Value: 128 MB capacity accommodates full bootloader + recovery image; 25 μs random read ensures sub-100 ms boot latency.

Use Scenario: Field-upgradable firmware storage in medical diagnostic devices requiring signed, versioned updates with rollback capability.

IC Role / Device Role / Timing Role: Dual-bank storage partition holding active and candidate firmware images; managed by secure bootloader.

Use Value: 100,000 P/E cycles support >500 field updates over product lifetime; hardware #WP prevents corruption during power loss.

Embedded Data Logger

Edge AI Inference Cache

Use Scenario: Continuous sensor data capture in railway signaling equipment operating at -40°C to +85°C with no maintenance window.

IC Role / Device Role / Timing Role: Circular buffer for timestamped CAN/RS-485 telemetry; written sequentially with background wear leveling.

Use Value: 10-year data retention guarantees integrity of incident logs without battery-backed SRAM; ECC handles bit flips in harsh EMI environments.

Use Scenario: Caching pre-processed neural network weights and calibration tables in autonomous mobile robots with intermittent cloud sync.

IC Role / Device Role / Timing Role: High-reliability offload storage for model parameters; accessed via DMA-controlled NAND controller during inference startup.

Use Value: 250 μs page program enables rapid weight swapping between tasks; SLC endurance avoids degradation from frequent retraining cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND flash memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT29F1G08ABAEAH4	1 G-bit SLC NAND, 3.3 V supply, x8 only, 48-pin TSOP1 package; lacks Copy Back command and Parameter Page support.	Requires level-shifting for 1.8 V systems; no native support for ONFI-standardized parameter discovery or internal page moves.	Select when legacy 3.3 V infrastructure exists and Copy Back is not required for garbage collection efficiency.
TC58CVG1S3HRAIJ	1 G-bit SLC NAND, 1.8 V, x8/x16, 48-ball VFBGA; supports ONFI 2.3 but specifies only 30,000 P/E cycles and 5-year retention at 85°C.	Lower endurance and retention limit suitability for long-life industrial deployments; identical pinout but different timing margins.	Prefer for cost-sensitive consumer applications where 5-year lifecycle suffices and ECC implementation is robust.

Compared with MT29F1G08ABAEAH4 and TC58CVG1S3HRAIJ, W29N01HZDINF delivers higher endurance (100K vs 30K cycles), longer retention (10 vs 5 years), and ONFI-compliant features like Copy Back and Parameter Page - making it optimal for mission-critical industrial firmware storage where reliability and standardization outweigh minor cost differences.

Availability

W29N01HZDINF is available at Aetrix Electronics and suitable for industrial boot storage, firmware update modules, and embedded data loggers requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W29N01HZDINF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR, Serial NAND, and SLCCMOS flash products for industrial and automotive markets.

W29N01HZDINF belongs to Winbond's W29NxxHZ family of 1.8 V SLC NAND Flash devices designed specifically for space-constrained, low-power embedded systems needing high reliability and standardized command compatibility.

FAQ

What is the operating voltage range for W29N01HZDINF?

W29N01HZDINF operates from 1.7 V to 1.95 V, with nominal 1.8 V supply. This narrow range eliminates need for external voltage regulators in 1.8 V system designs and ensures stable timing margins across temperature. All DC and AC specifications in the datasheet are validated within this range, and operation outside it may cause command failure or data corruption.

Does W29N01HZDINF support the ONFI standard?

Yes, W29N01HZDINF supports ONFI 1.0–2.3 command subsets, including READ PARAMETER PAGE (ECh), which returns standardized device geometry and timing data. It also implements ONFI-compatible timing modes and status register layout, enabling plug-and-play integration with Linux MTD NAND drivers and vendor-agnostic controllers.

What is the spare area size per page in W29N01HZDINF?

W29N01HZDINF allocates 64 bytes of spare area per 2,112-byte page. This region is used exclusively for ECC parity bits (e.g., 4-bit correction per 528-byte sector), bad-block markers, logical-to-physical mapping metadata, and wear-leveling counters - all managed by the host controller or FTL firmware.

How many program/erase cycles does W29N01HZDINF guarantee?

W29N01HZDINF guarantees 100,000 program/erase cycles when used with 4-bit-per-528-byte ECC, as specified in the datasheet footnote. This endurance rating is measured under industrial temperature conditions (-40°C to +85°C) and assumes proper wear-leveling algorithm implementation in the host controller.

Is W29N01HZDINF pin-compatible with other Winbond NAND devices?

W29N01HZDINF shares the 48-ball VFBGA (package code D) footprint and x8 pinout with W29N02GV and W29N04GV in the same family, but differs in block count and timing parameters. Direct substitution requires validation of command set compatibility, timing margins, and ECC requirements - it is not a drop-in replacement for higher-density variants.

W29N01HZDINF Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 48-VFBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FLASH

Technology:: FLASH - NAND (SLC)

Memory Size:: 1Gbit

Memory Organization:: 128M x 8

Memory Interface:: -

Clock Frequency:: -

Write Cycle Time - Word, Page:: 25ns

Access Time:: 25 ns

Voltage - Supply:: 1.7V ~ 1.95V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 48-VFBGA (8x6.5)

W29N01HZDINF FAQ

1.How can I place an order for W29N01HZDINF through Aetrix?

Please submit a Request for Quotation (RFQ) for W29N01HZDINF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W29N01HZDINF reliable?

The price and inventory of W29N01HZDINF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HZDINF is usually 5 days.

3.What payment methods are accepted for W29N01HZDINF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HZDINF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W29N01HZDINF?

W29N01HZDINF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W29N01HZDINF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W29N01HZDINF?

For technical support, including W29N01HZDINF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HZDINF requirements.

6.How does Aetrix verify that W29N01HZDINF is sourced from the original manufacturer or authorized distributors?

All W29N01HZDINF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HZDINF meets industry standards.

7.What is the process for return or replacement of W29N01HZDINF?

All W29N01HZDINF units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HZDINF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W29N01HZDINF part is unused and in its original packaging.

Return procedure for W29N01HZDINF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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