Winbond Electronics Corporation W29N01HZDINF TR

Overview

W29N01HZDINF TR from Winbond is a 1G-bit (128MB) Single-Level Cell (SLC) NAND Flash memory operating at 1.7–1.95V, organized into 1,024 erasable blocks of 135,168 bytes each (64 pages × 2,112 bytes), with 2,048-byte main data + 64-byte spare area per page. It supports x8/x16 bus width, delivers 25ns sequential read cycle time and 250μs typical page program time, and is used in embedded boot storage, industrial logging, and firmware code shadowing.

For engineers reviewing the W29N01HZDINF TR datasheet, W29N01HZDINF TR pinout, W29N01HZDINF TR application, or W29N01HZDINF TR equivalent, this page provides verified pin functions, timing-critical AC/DC specifications, NAND command set compliance (including COPY BACK and READ PARAMETER PAGE), and validated alternatives for SLC NAND replacement in space-constrained 1.8V systems.

Technical Context

The W29N01HZDINF TR implements standard ONFI-compatible NAND interface logic with multiplexed I/O bus, using CLE/ALE control to latch commands, addresses, and data on rising #WE edges. Its internal architecture includes a 2,112-byte data register, column/row decoders, high-voltage generator, and status register accessible via READ STATUS (70h) command.

It supports full command set including PAGE READ (00h–30h), PAGE PROGRAM (80h–10h), BLOCK ERASE (60h–D0h), COPY BACK (00h–35h / 85h–10h), and READ PARAMETER PAGE (ECh), with RY/#BY open-drain output indicating operation progress and #WP enabling hardware write protection during active or standby states.

Key Specifications

Pinout & Package

W29N01HZDINF TR is supplied in a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package (Package Code D), 6.0 mm × 8.0 mm footprint, 0.5 mm ball pitch, with balls arranged in 6×8 array. All Vcc and Vss balls must be connected; DNU balls are not bonded and must remain unconnected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SLC NAND flash memory applications.

Compared with MT29F1G08ABAEAH4-IT:E, W29N01HZDINF TR eliminates level-shifters and saves board area via 48-ball VFBGA; versus TC58CVG1S3HRAIJ, it retains identical pinout and timing while reducing ball count by 15 - lowering routing complexity and assembly cost in high-volume metering or PLC designs.

Availability

W29N01HZDINF TR is available at Aetrix Electronics and suitable for industrial PLC firmware storage, automotive ADAS log buffering, and medical infusion pump boot memory requiring stable component supply across extended temperature ranges and multi-year production cycles.

Supply support for W29N01HZDINF TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.

The W29N series targets high-reliability embedded NAND applications, emphasizing SLC endurance, wide temperature operation, and ONFI-standardized command compatibility for seamless integration with mainstream NAND controllers.

FAQ

What is the operating voltage range for W29N01HZDINF TR?

The W29N01HZDINF TR operates across 1.7 V to 1.95 V, making it compatible with 1.8 V I/O domains without external regulation or level shifting. This range is validated per DC Electrical Characteristics Table 10.2, with all timing and endurance specs guaranteed within this window. The W29N01HZDINF TR draws only 13 mA typical during active read, supporting low-power embedded host designs.

Does W29N01HZDINF TR support ONFI standard commands?

Yes, W29N01HZDINF TR supports ONFI 2.3–compatible commands including READ PARAMETER PAGE (ECh), which returns standardized device geometry and timing data. It also implements mandatory ONFI operations like PAGE READ (00h–30h), BLOCK ERASE (60h–D0h), and READ STATUS (70h). The W29N01HZDINF TR datasheet confirms ONFI identifying codes in Table 9.2, ensuring interoperability with ONFI-aware controllers.

What package type is used for W29N01HZDINF TR?

W29N01HZDINF TR uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package (Package Code D), measuring 6.0 mm × 8.0 mm with 0.5 mm ball pitch. Pin assignments match Figure 3-2 (x8 mode) and are detailed in Table 3.1. This compact VFBGA enables high-density PCB layouts in space-constrained applications such as portable medical devices and automotive ECUs where the W29N01HZDINF TR is commonly deployed.

How many program/erase cycles is W29N01HZDINF TR rated for?

W29N01HZDINF TR is rated for 100,000 program/erase cycles when used with 4-bit-per-528-byte ECC, as specified in Section 2 FEATURES and Table 10.7. This endurance is measured per block and validated under industrial plus conditions (–40°C to +105°C). The W29N01HZDINF TR achieves this via Single-Level Cell architecture and robust oxide quality control, making it suitable for frequent firmware update or logging workloads.

What is the purpose of the RY/#BY pin on W29N01HZDINF TR?

The RY/#BY pin on W29N01HZDINF TR is an open-drain output that signals device readiness: low indicates active internal operation (read, program, or erase), and high confirms completion. Host systems must provide an external pull-up resistor. This pin replaces polling the status register (70h command) for latency-sensitive applications, enabling efficient interrupt-driven operation. The W29N01HZDINF TR specification defines RY/#BY timing in Figure 11-6 and Table 10.8.