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Winbond Electronics Corporation W29N01HZSINA TR
- Part No.:
- W29N01HZSINA TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 48-TFSOP (0.724", 18.40mm Width)
- Datasheet:
-
W29N01HZSINA TR.pdf
- Description:
- IC FLASH 1GBIT ONFI 48TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,549
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Product details
Overview
W29N01HZSINA TR from Winbond is a 1G-bit (128MB) Single-Level Cell (SLC) NAND Flash memory operating at 1.7V–1.95V, organized into 1,024 erasable blocks of 135,168 bytes each (64 pages × 2,112 bytes), with x8 bus interface and TSOP1-48 packaging. It delivers 25ns sequential read cycle time, 250μs typical page program time, and supports standard NAND commands including Copy Back, Read ID, and Read Parameter Page - deployed in embedded boot storage and firmware code shadowing applications.
For engineers reviewing the W29N01HZSINA TR datasheet, W29N01HZSINA TR pinout, W29N01HZSINA TR application, or W29N01HZSINA TR equivalent, key selection criteria include its 1.8V single-supply operation, industrial temperature range (−40°C to +85°C), 100,000 program/erase endurance, 10-year data retention, and compatibility with ONFI-standard host controllers requiring multiplexed command/address/data timing.
Technical Context
This SLC NAND device implements a standard 5-signal control interface (CLE, ALE, #CE, #WE, #RE) with multiplexed I/O[0–7] for command, address, and data transfer. Its internal architecture includes dedicated command and address latches, a high-voltage generator for programming/erasing, and a status register accessible via READ STATUS (70h) command.
It supports both sequential and random access modes: PAGE READ (00h–30h) for full-page burst reads, RANDOM DATA OUTPUT (05h–E0h) for intra-page byte-level reads, and COPY BACK operations to reduce write amplification. Block erase (60h–D0h) targets entire 128KB+4KB units, while WRITE PROTECT (#WP) provides hardware-level program/erase inhibition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 1 G-bit / 128 MB total capacity, sufficient for firmware images and boot code in space-constrained embedded systems. |
| Supply Voltage | 1.7 V to 1.95 V - enables direct integration with 1.8V logic domains without level-shifting circuitry. |
| Page Size | 2,112 bytes (2,048B main + 64B spare) - spare area reserved for ECC metadata and bad-block management. |
| Block Size | 135,168 bytes (64 pages × 2,112 bytes) - defines minimum erasable unit for wear leveling and FTL mapping. |
| Read Performance | 25 ns sequential read cycle - supports high-throughput streaming of media or firmware data from contiguous pages. |
| Program/Erase Endurance | 100,000 cycles - validated under 1-bit/528-byte ECC correction, enabling long-term reliability in industrial logging or control firmware. |
| Data Retention | 10 years at 85°C - ensures nonvolatile storage integrity across full industrial temperature range without refresh. |
| Operating Temperature | −40°C to +85°C - qualified for deployment in automotive infotainment, industrial HMIs, and network edge devices. |
Pinout & Package
W29N01HZSINA TR uses a 48-pin TSOP1 package (Package Code S, 12 mm × 20 mm), compliant with JEDEC MO-142. All Vcc and Vss pins must be externally decoupled; DNU (Do Not Use) balls are unconnected and must remain floating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable | Active-low global enable: high = standby (10 μA), low = active; enables power-up sequencing and multi-chip select. |
| #WE | Write Enable | Rising-edge latch control for commands, addresses, and input data - synchronizes all write-cycle timing. |
| #RE | Read Enable | Falling-edge triggered serial output strobe; tREA = 25 ns max delay before valid data appears on I/O[0–7]. |
| ALE | Address Latch Enable | High pulse latches column/row addresses from I/O bus during address cycles - critical for correct block/page targeting. |
| CLE | Command Latch Enable | High pulse latches command codes (e.g., 00h, 80h, 60h) from I/O bus - initiates all device operations. |
| #WP | Write Protect | Active-low hardware lock: pulls low to disable all program/erase functions - prevents accidental firmware corruption. |
| RY/#BY | Ready/Busy | Open-drain status indicator: low = internal operation in progress (read/program/erase), high = ready for next command. |
| I/O[0–7] | Bidirectional Data Bus | Multiplexed path for commands (8-bit), addresses (4 cycles × 8-bit), and data (2,048B/page) - reduces pin count and PCB footprint. |
Key Features
| Feature | Design Value |
|---|---|
| SLC NAND Architecture | Guarantees deterministic 100K P/E cycles and 10-year retention - essential for mission-critical boot storage where wear leveling overhead is unacceptable. |
| ONFI-Compatible Interface | Supports standardized command set (READ ID, READ PARAMETER PAGE) and timing - simplifies host controller driver development and interoperability testing. |
| Copy Back Command | Enables page-to-page data relocation within same die without external buffering - reduces write amplification in managed NAND implementations. |
| Hardware Write Protection | Dedicated #WP pin provides fail-safe, zero-software-overhead protection against unintended firmware updates or field reprogramming. |
| Low-Power Standby | 10 μA CMOS standby current - extends battery life in always-on embedded systems such as smart meters and IoT gateways. |
Applications
| Industrial HMI Boot Storage | Automotive Infotainment Firmware |
|---|---|
|
Use Scenario: Storing bootloader and OS kernel in programmable flash for panel-mounted human-machine interfaces with no external storage. IC Role / Device Role / Timing Role: Primary nonvolatile code storage device; executes XIP-capable boot sequence after power-on reset. Use Value: 1.8V operation eliminates level shifters; 100K endurance supports field firmware updates over 10+ years of service life. |
Use Scenario: Holding firmware images and configuration data for head-unit microcontrollers in vehicles operating across −40°C to +85°C. IC Role / Device Role / Timing Role: Dedicated firmware storage IC interfaced directly to MCU's NAND controller peripheral. Use Value: Industrial temperature rating and 10-year data retention ensure reliability under thermal cycling and long vehicle lifecycles. |
| Network Edge Device Configuration | Medical Diagnostic Instrument Logging |
|
Use Scenario: Persistent storage of network stack parameters, certificates, and runtime logs in compact 5G small-cell base stations. IC Role / Device Role / Timing Role: Secondary storage for configuration and event history - accessed asynchronously via DMA-controlled NAND controller. Use Value: TSOP1-48 package fits tight board real estate; 25ns read speed enables rapid log retrieval during diagnostics. |
Use Scenario: Recording sensor calibration data, usage logs, and diagnostic snapshots in portable ultrasound or ECG devices. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage element with hardware write protect enabled during clinical operation. Use Value: #WP pin prevents accidental overwrite of regulatory-critical calibration records; ECC-ready spare area supports medical-grade error correction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F1G08ABAEAH4-IT:E | 1Gb SLC NAND, 3.3V supply, x8 interface, 48-pin TSOP1 - higher voltage, slower 35ns read cycle, 50K endurance. | Requires level-shifting for 1.8V hosts; lower endurance limits field update frequency in long-lifecycle products. | Select when legacy 3.3V system architecture precludes 1.8V adoption and reduced endurance is acceptable. |
| TC58CVG1S3HRAIJ | 1Gb SLC NAND, 1.8V supply, x8 interface, 48-pin TSOP1 - identical voltage and package, but 30ns read cycle and 50K endurance. | Lacks Copy Back command; uses different ONFI version and parameter page layout - may require driver adaptation. | Choose only if existing platform already uses Toshiba NAND drivers and 50K cycles meet product lifetime requirements. |
Compared with MT29F1G08ABAEAH4-IT:E and TC58CVG1S3HRAIJ, W29N01HZSINA TR offers superior 25ns read performance, 100K endurance, and native Copy Back support - making it optimal for new 1.8V designs demanding high reliability and firmware agility.
Availability
W29N01HZSINA TR is available at Aetrix Electronics and suitable for industrial HMI boot storage, automotive infotainment firmware, and network edge device configuration requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.
Supply support for W29N01HZSINA TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash and SRAM, serving industrial, automotive, and communications markets since 1987.
The W29N01HZ series is part of Winbond's industrial-grade SLC NAND portfolio, designed specifically for embedded code storage and firmware update resilience in harsh-temperature, high-reliability applications.
FAQ
What is the operating voltage range for W29N01HZSINA TR?
W29N01HZSINA TR operates from 1.7 V to 1.95 V, with nominal 1.8 V supply. This narrow range enables direct connection to 1.8 V logic domains without voltage translation, reducing BOM cost and signal integrity risk. The device maintains full functionality-including program, erase, and read operations-across this range, and its DC characteristics (e.g., 13 mA read current, 10 μA standby) are specified at 1.8 V.
Does W29N01HZSINA TR support ONFI compliance?
Yes, W29N01HZSINA TR supports ONFI 1.0-compatible identification and parameter reporting via READ ID (90h) and READ PARAMETER PAGE (ECh) commands. It reports ONFI identifying codes at address 20h and outputs standardized timing and feature parameters in the parameter page, enabling interoperability with ONFI-aware host controllers and simplifying driver porting across NAND vendors.
What is the endurance specification of W29N01HZSINA TR and how is it validated?
W29N01HZSINA TR guarantees 100,000 program/erase cycles per block, validated under 1-bit-per-528-byte ECC correction. This endurance rating reflects real-world conditions where error correction is applied during normal operation. The specification assumes proper wear-leveling firmware and avoids exceeding block limits - critical for firmware update partitions in industrial controllers and automotive ECUs.
How does the #WP pin function on W29N01HZSINA TR?
The #WP (Write Protect) pin on W29N01HZSINA TR is an active-low hardware lock that disables all program and erase operations when asserted (low). It remains effective regardless of command state or internal busy condition, providing fail-safe protection against accidental firmware corruption during power transitions or software faults. For permanent protection, tie #WP to Vss; for dynamic control, drive it from a GPIO or supervisor IC.
What package type is used by W29N01HZSINA TR and what are its mechanical dimensions?
W29N01HZSINA TR uses a 48-pin TSOP1 package (JEDEC MO-142), measuring 12 mm × 20 mm with 0.5 mm lead pitch. This surface-mount package features gull-wing leads compatible with standard reflow profiles and offers robust thermal and mechanical performance for industrial PCB assembly. Pin assignments match Figure 3-1 in the datasheet, and all Vcc/Vss pins require local 100 nF ceramic decoupling.
W29N01HZSINA TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 48-TFSOP (0.724", 18.40mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- ONFI
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 22 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-TSOP
W29N01HZSINA TR FAQ
1.How can I place an order for W29N01HZSINA TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N01HZSINA TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N01HZSINA TR reliable?
The price and inventory of W29N01HZSINA TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N01HZSINA TR is usually 5 days.
3.What payment methods are accepted for W29N01HZSINA TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N01HZSINA TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N01HZSINA TR?
W29N01HZSINA TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N01HZSINA TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N01HZSINA TR?
For technical support, including W29N01HZSINA TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N01HZSINA TR requirements.
6.How does Aetrix verify that W29N01HZSINA TR is sourced from the original manufacturer or authorized distributors?
All W29N01HZSINA TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N01HZSINA TR meets industry standards.
7.What is the process for return or replacement of W29N01HZSINA TR?
All W29N01HZSINA TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N01HZSINA TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N01HZSINA TR part is unused and in its original packaging.
Return procedure for W29N01HZSINA TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W29N01HZSINA TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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AT24C04C-SSHM-T
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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