Winbond Electronics Corporation W29N01HZSINF

Overview

W29N01HZSINF from Winbond is a 1G-bit (128MB) Single-Level Cell (SLC) NAND Flash memory operating at 1.7V–1.95V, organized into 1,024 erasable blocks of 135,168 bytes each, with 64 pages per block (2,112 bytes/page), supporting x8/x16 bus widths and used for code shadowing, embedded storage, and media data retention in space-constrained industrial systems.

For engineers reviewing the W29N01HZSINF datasheet, W29N01HZSINF pinout, W29N01HZSINF application, or W29N01HZSINF equivalent, key selection criteria include its 1.8V single-supply operation, 25μs random read latency, 250μs typical page program time, 2ms block erase time, and support for ONFI-compatible command set including Copy Back and Parameter Page read - all critical for boot code storage and firmware update reliability.

Technical Context

This SLC NAND device implements a multiplexed I/O interface with five dedicated control signals (#CE, #WE, #RE, CLE, ALE) to manage command, address, and data latching on shared pins. Its internal architecture includes a 2,112-byte data register, column/row decoders, high-voltage generator, and status register, enabling full compatibility with standard NAND controllers.

It supports both x8 and x16 configurations via package-specific pinouts, uses open-drain RY/#BY for asynchronous operation monitoring, and incorporates hardware write protection via #WP. The device complies with ONFI 1.0 timing and command definitions, including ECh (Parameter Page) and 70h (Read Status), with defined invalid block management and ECC-ready spare area layout (64-byte spare per 2,048-byte page).

Key Specifications

Pinout & Package

W29N01HZSINF is packaged in a 48-pin TSOP1 (package code S), 12 mm × 20 mm footprint, with all Vcc and Vss pins requiring connection per datasheet requirement. DNU (Do Not Use) pins must remain unconnected; N.C. (No Connect) pins are internally unused and may be left floating or tied to ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND flash memory applications.

Compared with W29N01HZSINF, MT29F1G08ABAEAH4 requires level-shifting and lacks standardized parameter discovery, while TC58NVG1S3ETA00 trades 10 μs read latency and 1 ms erase overhead for broader ONFI revision support - making W29N01HZSINF optimal for cost-sensitive, timing-critical 1.8V TSOP1 designs.

Availability

W29N01HZSINF is available at Aetrix Electronics and suitable for industrial HMI boot storage, medical device firmware archive, and smart meter firmware update applications requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for W29N01HZSINF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.

W29N01HZSINF belongs to Winbond's W29NxxHZ family of SLC NAND Flash devices designed specifically for embedded code storage and firmware update applications where reliability, low voltage operation, and standardized ONFI interoperability are mandatory.

FAQ

What is the operating voltage range for W29N01HZSINF?

W29N01HZSINF operates from 1.7 V to 1.95 V, with 1.8 V as the nominal supply voltage. This narrow range enables compatibility with modern low-power SoCs and eliminates need for dual-voltage I/O buffers. All DC and AC specifications in the datasheet are characterized at 1.8 V, and operation outside this range may violate absolute maximum ratings or cause functional failure. W29N01HZSINF does not support 3.3 V operation.

Does W29N01HZSINF support x16 bus width in the TSOP1 package?

No, W29N01HZSINF in the 48-pin TSOP1 package (S-code) supports x8 bus width only, as confirmed by pin assignment diagrams and I/O[0–7] signal allocation in Figures 3-1 and Table 3.1. The x16 configuration is available only in 48-ball and 63-ball VFBGA packages (D- and B-codes), where I/O[8–15] are physically present and functional. Using x16 mode with W29N01HZSINF is not possible due to missing pins and internal routing.

What is the purpose of the 64-byte spare area in each 2,112-byte page of W29N01HZSINF?

The 64-byte spare area in each page of W29N01HZSINF is reserved for metadata including ECC syndromes (typically 4-bit/528-byte BCH), bad-block markers, logical-to-physical mapping entries, and wear-leveling counters. It is not user-accessible for general data storage and must be managed by the host controller or flash translation layer. This layout aligns with ONFI specification requirements and enables robust error correction essential for 100,000-cycle SLC endurance.

How does the Copy Back feature work in W29N01HZSINF?

W29N01HZSINF supports Copy Back via two-phase command sequence: first, READ for COPY BACK (00h-35h) loads a source page into the internal data register; second, PROGRAM for COPY BACK (85h-10h) writes that data to a destination page without transferring it through the host. This reduces host I/O bandwidth usage and accelerates wear-leveling operations. Copy Back is limited to pages within the same plane and cannot cross block boundaries.

Is W29N01HZSINF compatible with ONFI 2.0 or later standards?

W29N01HZSINF implements ONFI 1.0 command definitions and timing parameters, including ECh (Parameter Page) and 70h (Read Status), but does not support ONFI 2.0+ features such as NV-DDR interface, enhanced reset behavior, or extended parameter page fields. Host controllers must use ONFI 1.0-compliant initialization sequences and avoid issuing ONFI 2.0+ commands, which are undefined and may cause unpredictable behavior in W29N01HZSINF.