Winbond Electronics Corporation W29N02KVBIAE

Overview

W29N02KVBIAE from Winbond is a 2G-bit (256MB) SLC NAND Flash memory IC operating on a single 2.7V–3.6V supply, organized into 2,048 erasable blocks of 139,264 bytes each, with 64 pages per block and 2,176-byte pages (2,048B main + 128B spare). It supports standard NAND command set, two-plane operations, and Copy Back, targeting embedded code storage and media data buffering in space-constrained industrial systems.

For engineers reviewing the W29N02KVBIAE datasheet, W29N02KVBIAE pinout, W29N02KVBIAE application, or W29N02KVBIAE equivalent, key selection criteria include its x8 multiplexed I/O interface, 25μs random read latency, 250μs typical page program time, 60,000 P/E cycle endurance with 8-bit/544-byte ECC, and support for ONFI-compatible control signals (CLE/ALE/#CE/#WE/#RE).

Technical Context

This device implements a standard NAND architecture with dual-plane operation enabling concurrent read/write/erase across even- and odd-numbered block planes. Its command-latch protocol uses CLE and ALE to distinguish command, address, and data phases on the shared 8-bit I/O bus.

The internal logic control block manages status register access (70h/78h), parameter page reads (ECh), unique ID retrieval (EDh), and feature configuration (EEh/EFh), while the high-voltage generator enables reliable program/erase without external charge pumps.

Key Specifications

Pinout & Package

W29N02KVBIAE is packaged in a 48-ball VFBGA (package code D, 6mm × 8mm, 0.8mm ball pitch), compatible with high-density PCB layouts and automated assembly. All Vcc and Vss pins must be connected; DNU pins are unconnected, NC pins are not internally bonded.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND flash memory applications.

Compared with MT29F2G08ABAEAH4 and TC58NVG2S3HTAI0, W29N02KVBIAE offers superior feature integration-specifically two-plane operation, Copy Back, OTP, and Block Lock-within the same 48-ball VFBGA footprint, making it optimal for secure, high-efficiency embedded storage where firmware integrity and garbage collection efficiency are critical.

Availability

W29N02KVBIAE is available at Aetrix Electronics and suitable for industrial HMI storage, medical device firmware, network edge router boot, and automotive infotainment cache requiring stable component supply, long-term lifecycle support, and guaranteed SLC reliability.

Supply support for W29N02KVBIAE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, communications, and consumer markets since 1987.

The W29N02KV family targets cost-sensitive, space-constrained embedded systems needing robust, long-life nonvolatile storage with advanced NAND management features-designed specifically for industrial temperature operation and firmware-centric use cases.

FAQ

What is the operating voltage range for W29N02KVBIAE?

W29N02KVBIAE operates across a single 2.7V to 3.6V supply range, supporting wide-input industrial power rails. This allows direct connection to common 3.3V LDO outputs without level-shifting, and maintains full functionality-including 25μs random read and 250μs page program-across the entire voltage window. The device's DC characteristics are fully specified at 3.0V and 3.3V per its datasheet Tables 10-2 and 10-3.

Does W29N02KVBIAE support ONFI compliance?

Yes, W29N02KVBIAE supports ONFI 2.3-compatible signaling and timing, as confirmed by its pin definitions (CLE/ALE/#CE/#WE/#RE), command set alignment, and AC timing specifications in Tables 10-5 and 10-6. While not certified as an ONFI member product, its interface behavior matches ONFI 2.3 for command/address/data latching, enabling interoperability with standard NAND controllers designed for ONFI-compliant devices like W29N02KVBIAE.

How many program/erase cycles does W29N02KVBIAE guarantee?

W29N02KVBIAE guarantees 60,000 program/erase cycles per block when used with 8-bit/544-byte ECC correction, as stated in Section 2 Features and Table 10-7. This endurance rating assumes proper wear-leveling firmware and adherence to datasheet timing and voltage limits; exceeding the specified 250μs program or 2ms erase times may reduce actual cycle life.

What package type is used for W29N02KVBIAE?

W29N02KVBIAE uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package, identified by package code D and measuring 6mm × 8mm with 0.8mm ball pitch. This package is documented in Figure 3-2 and Section 13.2 of the datasheet, and is distinct from the 48-pin TSOP1 (code S) and 63-ball VFBGA (code B) variants in the same family.

Can W29N02KVBIAE perform concurrent operations across memory planes?

Yes, W29N02KVBIAE supports true two-plane operation: it can execute independent read, program, or erase commands simultaneously on even- and odd-numbered block planes. This capability-documented in Sections 9.1.2, 9.2.4, and 9.4.2-is enabled via plane-address bit A18 and verified in timing diagrams Figure 9-2 and Figure 9-11, delivering measurable throughput gains in garbage collection and firmware update scenarios.