Winbond Electronics Corporation W29N02KVSIAE TR

Overview

W29N02KVSIAE from Winbond is a 2G-bit (256MB) SLC NAND Flash memory IC operating at 2.7–3.6V, organized into 2,048 blocks × 64 pages × 2,176 bytes/page (2,048B main + 128B spare), with x8 multiplexed I/O bus, TSOP1-48 package, and industrial temperature range (−40°C to +85°C). It serves as nonvolatile storage for embedded boot code, firmware updates, and media data in space-constrained systems.

For engineers reviewing the W29N02KVSIAE datasheet, W29N02KVSIAE pinout, W29N02KVSIAE application, or W29N02KVSIAE equivalent, key selection criteria include its 25μs random read latency, 250μs typical page program time, 2ms block erase time, 60,000 P/E cycles with 8-bit/544-byte ECC, and ONFI-compatible command set supporting two-plane operations and copy-back.

Technical Context

This device implements a standard NAND Flash architecture with dedicated Command Latch Enable (CLE) and Address Latch Enable (ALE) signals for multiplexed command/address/data transfers over an 8-bit I/O bus. Its internal logic control block manages status register access, high-voltage generation for programming/erasing, and dual-plane addressing via A18.

It supports ONFI 1.0–compatible operations including two-plane read/program/erase, copy-back, and enhanced status reporting (78h), while requiring external ECC handling per JEDEC-compliant SLC NAND interface protocols. The RY/#BY open-drain output provides asynchronous operation status feedback without internal pull-up.

Key Specifications

Pinout & Package

W29N02KVSIAE is packaged in a 48-pin TSOP1 (12 mm × 20 mm, package code S), with all Vcc and Vss pins requiring external connection per datasheet requirement. DNU (Do Not Use) and N.C. (No Connect) pins must remain unconnected.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Compared with MT29F2G08ABAEAH4-IT:E and TC58NVG2S3ETA00, W29N02KVSIAE offers ONFI-aligned two-plane concurrency and copy-back without on-die ECC-making it optimal for cost-sensitive, firmware-centric designs where host-based ECC is already implemented and TSOP1 footprint is fixed.

Availability

W29N02KVSIAE is available at Aetrix Electronics and suitable for industrial HMI firmware storage, medical device boot memory, and smart meter data logging requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature performance.

Supply support for W29N02KVSIAE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, communications, and consumer markets.

The W29N02KV series targets embedded systems needing reliable, low-power, pin-efficient NAND Flash for code execution and data logging-designed specifically for space-constrained, thermally demanding applications with strict longevity requirements.

FAQ

What is the operating voltage range for W29N02KVSIAE?

W29N02KVSIAE operates across a single 2.7V to 3.6V supply, with full functionality and timing compliance guaranteed across this range. It draws 25mA typical during active read or program operations and only 10μA in CMOS standby mode, making it suitable for battery-backed or energy-harvesting systems where supply regulation margin is limited. This voltage range aligns with standard 3.3V logic interfaces without level-shifting.

Does W29N02KVSIAE support hardware write protection?

Yes, W29N02KVSIAE includes a dedicated #WP (Write Protect) pin that, when driven low, disables all program and erase operations-including page program, block erase, and copy-back-regardless of command sequence. This hardware lock prevents accidental firmware corruption during power transitions or software faults, and remains active even if the device is reset or reinitialized. The #WP function is independent of internal status registers.

How is the memory organized in W29N02KVSIAE?

W29N02KVSIAE organizes its 2G-bit array into 2,048 erasable blocks, each containing 64 programmable pages of 2,176 bytes (2,048B main + 128B spare). The spare area is reserved for ECC parity, bad-block markers, and logical-to-physical mapping metadata. Blocks are split into two planes (even/odd numbering), controlled by address bit A18, enabling concurrent operations across planes to improve effective throughput.

What command set does W29N02KVSIAE implement?

W29N02KVSIAE implements the standard NAND Flash command set (e.g., 00h read, 80h/10h program, 60h/D0h erase) plus ONFI 1.0–compatible extensions including two-plane operations (00h-00h-30h), copy-back (35h/85h), and enhanced status (78h). It also supports READ PARAMETER PAGE (ECh) for dynamic feature discovery. All commands are issued via the multiplexed I/O[7:0] bus using CLE/ALE control signals.

What is the endurance rating of W29N02KVSIAE and under what conditions?

W29N02KVSIAE guarantees 60,000 program/erase cycles per block when used with 8-bit error correction coding over 544-byte sectors, as specified in the datasheet. This endurance assumes proper wear-leveling algorithms in the host controller and adherence to recommended voltage, timing, and temperature limits. Endurance degrades outside the industrial temperature range or with insufficient ECC coverage, and is not rated for partial-page writes or uncorrectable bit errors.