My Inquiry
My Account
Winbond Electronics Corporation W29N02KZDIBF
- Part No.:
- W29N02KZDIBF
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
W29N02KZDIBF.pdf
- Description:
- IC FLASH 2GBIT 48-VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,359
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W29N02KZDIBF from Winbond is a 2G-bit (256MB) single-level cell (SLC) NAND Flash memory operating at 1.7V–1.95V, organized into 2,048 blocks of 64 pages each (2,176 bytes/page, x8 bus), with 128-byte spare area per page for ECC and metadata. It supports standard NAND commands including two-plane read/program, copy-back, and ONFI-compatible timing, targeting embedded storage in space-constrained industrial systems.
For engineers reviewing the W29N02KZDIBF datasheet, W29N02KZDIBF pinout, W29N02KZDIBF application, or W29N02KZDIBF equivalent, key selection considerations include its 48-ball VFBGA (x8) package, 25μs random read latency, 250μs typical page program time, 2ms block erase time, and 60,000 P/E cycle endurance under 4-bit/544-byte ECC correction.
Technical Context
This device implements a multiplexed x8 parallel interface with five dedicated control signals (#CE, #WE, #RE, CLE, ALE) and one status signal (RY/#BY), enabling command/address/data sharing over the same I/O[0–7] pins. Its architecture supports two-plane operations to halve effective read/write latency by interleaving access across independent memory planes.
Internal organization includes a 285,212,672-byte array (256MB total), with each 139,264-byte block containing 64 pages of 2,176 bytes (2,048B main + 128B spare). The spare area is explicitly allocated for error management functions, and endurance is specified only with 4-bit/544-byte ECC support.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 2G-bit / 256MB total capacity; enables compact code shadowing and media storage without external expansion. |
| Bus Width | x8 interface (I/O[0–7]); reduces PCB trace count vs. x16, simplifying routing in dense embedded layouts. |
| Page Size | 2,176 bytes (2,048B main + 128B spare); spare area reserved for ECC parity and bad-block markers. |
| Block Size | 139,264 bytes (64 × 2,176B); defines minimum erasable unit - impacts wear leveling granularity and firmware overhead. |
| Random Read | 25μs max latency; determines responsiveness for small-file or metadata access in boot loaders and file systems. |
| Page Program | 250μs typical time; sets write throughput ceiling for logging, configuration updates, and firmware patches. |
| Block Erase | 2ms typical time; governs background garbage collection speed and sustained write performance. |
| Endurance | 60,000 program/erase cycles (with 4-bit/544-byte ECC); defines usable lifetime under real-world ECC correction. |
Pinout & Package
W29N02KZDIBF uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) package (package code D), 8mm × 9mm footprint, 0.5mm ball pitch, compliant with JEDEC MO-245. All Vcc and Vss balls must be connected; DNU balls are unconnected, NC balls may be left floating or tied.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable input | Active-low global enable: high = standby (10μA), low = active; enables power-state transitions and multi-chip select. |
| #WE | Write Enable input | Rising-edge latch for commands, addresses, and data; controls timing of all write-cycle setup and hold windows. |
| #RE | Read Enable input | Falling-edge trigger for serial data output; tREA delay defines minimum read access time to valid I/O data. |
| ALE | Address Latch Enable input | High pulse latches column/row addresses via I/O bus; separates address phase from command/data phases. |
| CLE | Command Latch Enable input | High pulse latches command codes (e.g., 00h, 80h, 60h) via I/O bus; isolates command decoding from other bus traffic. |
| RY/#BY | Ready/Busy output | Open-drain active-low status flag: low = operation in progress (e.g., program/erase), high = ready for next command. |
| #WP | Write Protect input | Hardware lock: low = disable program/erase; prevents accidental corruption during power transients or firmware faults. |
| I/O[0–7] | Multiplexed data/address/command bus | Shared 8-bit bidirectional path: carries commands (CLE=H), addresses (ALE=H), or data (CLE=ALE=L); requires precise timing control. |
| Vcc | Power supply | 1.7V–1.95V core supply; all Vcc balls must be decoupled locally to meet AC noise and current-surge requirements. |
| Vss | Ground | Reference return for all signals; multiple Vss balls require low-inductance connection to minimize ground bounce. |
Key Features
| Feature | Design Value |
|---|---|
| Two-plane operation | Enables concurrent read/program across independent memory planes, reducing effective latency by up to 50% for sequential access patterns. |
| Copy-back programming | Allows internal page-to-page data movement without host RAM buffering, minimizing system bandwidth usage during wear leveling. |
| ONFI-compatible timing | Supports standardized timing parameters (e.g., tREA, tR, tWB) for interoperability with ONFI-compliant controllers and reference designs. |
| 128-byte spare area per page | Dedicated space for ECC syndromes, logical-to-physical mapping, and bad-block flags - essential for robust flash translation layer (FTL) implementation. |
| 63-ball VFBGA option (x8/x16) | Provides pin-compatible scalability: same logic interface as 48-ball variant but with additional I/O or power/ground balls for higher reliability or future-proofing. |
Applications
| Industrial HMI Storage | Medical Device Firmware |
|---|---|
|
Use Scenario: Storing GUI assets, calibration tables, and audit logs in panel-mounted HMIs operating continuously in factory environments. IC Role / Device Role / Timing Role: Non-volatile code and data storage with deterministic read latency and guaranteed 10-year data retention at 85°C. Use Value: Eliminates need for external EEPROM + SRAM combo; 60,000 P/E cycles ensure >10 years of daily firmware updates under industrial temperature stress. |
Use Scenario: Holding FDA-compliant boot firmware, device configuration, and patient history buffers in portable diagnostic equipment. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage with hardware write protection (#WP) and ECC-managed reliability. Use Value: #WP pin prevents unauthorized reprogramming during field service; 128-byte spare area accommodates cryptographic signature storage and revision tracking. |
| Edge Gateway Boot Media | Automotive Infotainment Cache |
|
Use Scenario: Hosting Linux kernel, rootfs, and OTA update staging area in cellular-connected edge gateways deployed outdoors. IC Role / Device Role / Timing Role: High-reliability NAND with two-plane read acceleration for fast boot and rapid update application. Use Value: Two-plane operation cuts boot time by ~40% vs. single-plane NAND; 25μs random read enables responsive CLI and diagnostics. |
Use Scenario: Caching map tiles, voice assistant models, and UI assets in automotive infotainment head units with thermal cycling exposure. IC Role / Device Role / Timing Role: Temperature-hardened (–40°C to +85°C) SLC NAND delivering consistent latency across vehicle lifecycle. Use Value: SLC architecture ensures stable 25μs read and 250μs program times after 10,000 thermal cycles - critical for ASIL-B adjacent subsystems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F2G08ABAEAH4-IT:E | 2G-bit x8 SLC NAND, 3.3V Vcc, 48-pin TSOP1 package; slower random read (30μs) and lower endurance (100,000 cycles). | Requires level-shifting for 1.8V systems; better suited for legacy 3.3V controller designs with larger board area. | Select when migrating from 3.3V platforms or when TSOP1 mechanical compatibility is mandatory. |
| TC58CVG2S0HRAIJ | 2G-bit x8 SLC NAND, 1.8V Vcc, 48-ball VFBGA; identical timing but lacks two-plane and copy-back commands. | No hardware-accelerated interleaving or internal page move - increases host CPU load for FTL maintenance. | Choose when two-plane operation is unnecessary and cost sensitivity outweighs advanced command benefits. |
Compared with MT29F2G08ABAEAH4-IT:E and TC58CVG2S0HRAIJ, W29N02KZDIBF delivers superior 1.8V efficiency, two-plane latency reduction, and copy-back capability - making it optimal for new 1.8V embedded designs requiring high-speed, low-power NAND with advanced management features.
Availability
W29N02KZDIBF is available at Aetrix Electronics and suitable for industrial HMI storage, medical device firmware, edge gateway boot media, and automotive infotainment cache requiring stable component supply, long-term lifecycle support, and guaranteed SLC NAND reliability.
Supply support for W29N02KZDIBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.
W29N02KZDIBF belongs to Winbond's W29N02KZ/W series of SLC NAND Flash devices designed specifically for embedded systems with strict power, space, and reliability constraints - emphasizing low-voltage operation, high endurance, and ONFI-aligned timing.
FAQ
What is the operating voltage range for W29N02KZDIBF?
W29N02KZDIBF operates from 1.7V to 1.95V - a tightly regulated 1.8V nominal supply. This narrow range ensures compatibility with modern low-power SoCs and PMICs while maintaining SLC NAND performance and endurance. Operation outside this window risks data corruption or premature wear; design must include tight-tolerance regulation and bypass capacitors on all Vcc balls.
Does W29N02KZDIBF support ONFI timing standards?
Yes, W29N02KZDIBF supports ONFI-compatible timing parameters including tREA (25μs), tR (25ns), and tWB (100ns), enabling plug-and-play integration with ONFI-compliant controllers. However, it is not ONFI-certified - full compliance requires validation against ONFI 2.3 spec, and certain advanced ONFI features (e.g., NV-DDR2) are not implemented in W29N02KZDIBF.
What package type does W29N02KZDIBF use, and what are its mechanical dimensions?
W29N02KZDIBF uses a 48-ball VFBGA package (code D), measuring 8mm × 9mm with 0.5mm ball pitch. It conforms to JEDEC MO-245 and features 22 signal balls (including 8 I/O), 6 Vcc, 6 Vss, and 8 NC/DNU balls. Board layout must follow Winbond's recommended pad stack, solder mask clearance, and reflow profile to ensure reliable interconnect.
How many program/erase cycles is W29N02KZDIBF rated for?
W29N02KZDIBF is rated for 60,000 program/erase cycles - but this specification assumes use of 4-bit/544-byte ECC correction as defined in the datasheet. Without adequate ECC, endurance drops significantly. Real-world field life depends on FTL wear-leveling efficiency and the quality of the ECC engine in the host controller.
What is the purpose of the 128-byte spare area in each page of W29N02KZDIBF?
The 128-byte spare area in each 2,176-byte page of W29N02KZDIBF is reserved exclusively for error management: storing ECC parity bits, logical-to-physical address mapping metadata, bad-block flags, and wear-leveling counters. It is not user-accessible for general data storage and must be managed by the flash translation layer (FTL) or host controller firmware.
W29N02KZDIBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 22 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (8x6.5)
W29N02KZDIBF FAQ
1.How can I place an order for W29N02KZDIBF through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N02KZDIBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N02KZDIBF reliable?
The price and inventory of W29N02KZDIBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N02KZDIBF is usually 5 days.
3.What payment methods are accepted for W29N02KZDIBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N02KZDIBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W29N02KZDIBF?
W29N02KZDIBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N02KZDIBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N02KZDIBF?
For technical support, including W29N02KZDIBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N02KZDIBF requirements.
6.How does Aetrix verify that W29N02KZDIBF is sourced from the original manufacturer or authorized distributors?
All W29N02KZDIBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N02KZDIBF meets industry standards.
7.What is the process for return or replacement of W29N02KZDIBF?
All W29N02KZDIBF units undergo pre-shipment inspection (PSI). If there is an issue with W29N02KZDIBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N02KZDIBF part is unused and in its original packaging.
Return procedure for W29N02KZDIBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W29N02KZDIBF Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
