Winbond Electronics Corporation W29N02KZDIBF TR
- Part No.:
- W29N02KZDIBF TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 48-VFBGA
- Datasheet:
-
W29N02KZDIBF TR.pdf
- Description:
- IC FLASH 2GBIT 48-VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W29N02KZDIBF TR from Winbond is a 2G-bit (256MB) single-level cell (SLC) NAND Flash memory operating at 1.7–1.95V, organized into 2,048 blocks of 64 pages each (2,176 bytes/page, x8 bus), with 128-byte spare area per page for ECC and metadata. It supports standard NAND command set including Copy Back and Two-Plane operations, and targets embedded storage in space-constrained, low-power systems such as industrial controllers and boot media.
For engineers reviewing the W29N02KZDIBF TR datasheet, W29N02KZDIBF TR pinout, W29N02KZDIBF TR application, or W29N02KZDIBF TR equivalent, key selection considerations include its 48-ball VFBGA (x8) package, 25μs random read latency, 250μs typical page program time, 2ms block erase time, and ONFI-compatible control interface with CLE/ALE/#CE/#WE/#RE/RY-BY signaling.
Technical Context
This device implements a multiplexed 8-bit I/O bus with dedicated command (CLE), address (ALE), and control signals (#CE, #WE, #RE, RY/#BY, #WP) to manage NAND protocol timing - including tREA (25ns), tR (35ns), tPROG (250μs typ.), and tBERS (2ms typ.). Its SLC architecture delivers 60,000 program/erase cycles and 10-year data retention under industrial temperature (-40°C to +85°C).
The W29N02KZDIBF TR uses a fixed 2,048-byte main + 128-byte spare page layout, supports two-plane concurrent operations to halve effective program/erase latency, and includes hardware-based write protection and ready/busy status reporting - all compliant with ONFI 2.3 timing conventions for interoperability with standard NAND controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 2G-bit / 256MB total capacity; enables compact firmware and log storage without external expansion. |
| Bus Width | x8 parallel interface; uses shared I/O[0–7] pins for commands, addresses, and data - reduces PCB trace count. |
| Page Size | 2,176 bytes (2,048B main + 128B spare); spare area holds ECC syndromes and metadata for error management. |
| Block Size | 64 pages × 2,176 bytes = 139,264 bytes; defines minimum erasable unit for wear leveling and bad-block handling. |
| Random Read | 25μs max latency; determines responsiveness for small code/data fetches during boot or runtime execution. |
| Page Program | 250μs typical time; impacts firmware update speed and logging throughput in real-time systems. |
| Block Erase | 2ms typical time; governs background maintenance overhead and flash translation layer efficiency. |
| Endurance | 60,000 P/E cycles (with 4-bit/544-byte ECC); sets usable lifetime for high-write industrial logging applications. |
Pinout & Package
W29N02KZDIBF TR is packaged in a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) with 0.5mm pitch, footprint 8.0mm × 9.0mm, and x8 bus configuration (Package Code D). All Vcc and Vss balls must be connected; DNU and N.C. balls are unconnected and must remain floating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| #CE | Chip Enable input | Active-low global enable; places device in standby (10μA) when high, enabling power gating in idle states. |
| #WE | Write Enable input | Rising-edge latch for commands, addresses, and data; synchronizes all write-side bus transactions. |
| #RE | Read Enable input | Falling-edge triggered serial output; controls data valid window (tREA = 25ns) and auto-increments column address. |
| ALE | Address Latch Enable input | High pulse enables I/O bus to load row/column addresses into internal registers during command sequences. |
| CLE | Command Latch Enable input | High pulse enables I/O bus to load command codes (e.g., 00h, 80h, 60h) into command register. |
| RY/#BY | Ready/Busy output | Open-drain active-low signal; indicates ongoing program/erase operation; used for polling or interrupt-driven flow control. |
| #WP | Write Protect input | Hardware lock preventing accidental program/erase; overrides software commands when asserted low. |
| I/O[0–7] | Multiplexed bidirectional data bus | Shared path for command, address, and data transfer; requires external bus controller sequencing per ONFI timing. |
| Vcc | Power supply | 1.7–1.95V core supply; all Vcc balls must be decoupled locally to meet AC noise and transient current requirements. |
| Vss | Ground | Reference for all I/O and internal logic; all Vss balls require low-impedance connection to system ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Two-Plane Operation | Enables concurrent program/erase across two independent planes, reducing effective latency by up to 50% in burst workloads. |
| Copy Back Command | Permits internal page-to-page data movement without host I/O, accelerating wear leveling and garbage collection. |
| ONFI 2.3 Timing Compliance | Guarantees interoperability with standard NAND controllers and avoids custom timing firmware development. |
| Hardware Write Protection | Physical #WP pin prevents unintended writes during power transitions or firmware faults - critical for boot-critical sectors. |
| Industrial Temperature Range | -40°C to +85°C operation ensures reliability in uncontrolled environments like factory automation and outdoor edge nodes. |
| SLC Architecture | Delivers deterministic latency, higher endurance, and simpler ECC requirements (4-bit/544-byte) vs. MLC/TLC alternatives. |
Applications
| Industrial PLC Firmware Storage | Medical Device Boot Media |
|---|---|
|
Use Scenario: Storing firmware images and configuration data in programmable logic controllers deployed in factory-floor environments with wide temperature swings and EMI exposure. IC Role / Device Role / Timing Role: Nonvolatile boot memory providing fast, deterministic access to bootloader and RTOS kernel during cold start and failover recovery. Use Value: 25μs random read and 250μs page program enable sub-100ms boot times; SLC endurance supports 10+ years of field updates without degradation. |
Use Scenario: Holding certified diagnostic firmware and calibration tables in portable ultrasound and infusion pumps requiring regulatory-compliant data integrity. IC Role / Device Role / Timing Role: Secure, tamper-resistant storage for FDA/IEC 62304-compliant code and runtime parameters with hardware write protection. Use Value: #WP pin and 10-year data retention ensure firmware immutability between recalibrations; 60,000 P/E cycles accommodate periodic safety audits and version upgrades. |
| Smart Meter Data Logging | Network Edge Router Boot Flash |
|
Use Scenario: Capturing time-stamped energy consumption logs in ANSI C12.22-compliant smart meters operating continuously for 15+ years. IC Role / Device Role / Timing Role: High-reliability data logger using spare-area ECC and invalid block management to sustain long-term write cycling. Use Value: 2ms block erase and Two-Plane operation allow background log compaction without interrupting metering accuracy or communication latency. |
Use Scenario: Hosting bootloaders and minimal Linux kernels in carrier-grade edge routers where firmware corruption must be prevented during power loss events. IC Role / Device Role / Timing Role: Primary boot device interfacing directly with ARM Cortex-A series SoCs via standard NAND controller IP. Use Value: ONFI 2.3 compliance eliminates driver porting effort; 1.8V operation matches SoC I/O voltage, simplifying level-shifting design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NAND Flash memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT29F2G08ABAEAH4-IT:E | 2G-bit x8 SLC NAND, 48-ball VFBGA, 1.7–1.95V, but uses Toggle Mode DDR interface (vs. asynchronous ONFI in W29N02KZDIBF TR). | Requires DDR-capable controller; not drop-in compatible with legacy ONFI-only designs. | Select only if migrating to higher bandwidth and controller supports Toggle DDR timing. |
| TC58NVG2S3HTAI0 | 2G-bit x8 SLC NAND, 48-ball VFBGA, 2.7–3.6V supply - incompatible voltage range; no 1.8V support. | Not suitable for 1.8V systems; requires level-shifting or redesign of power delivery network. | Use only in legacy 3.3V industrial platforms where voltage compatibility is confirmed. |
Compared with MT29F2G08ABAEAH4-IT:E and TC58NVG2S3HTAI0, the W29N02KZDIBF TR offers direct ONFI 2.3 asynchronous compatibility, 1.8V operation, and proven integration with widely deployed NAND controllers - making it optimal for cost-sensitive, power-constrained embedded boot and logging applications without DDR infrastructure.
Availability
W29N02KZDIBF TR is available at Aetrix Electronics and suitable for industrial PLC firmware storage, medical device boot media, and smart meter data logging requiring stable component supply, long-lifecycle support, and guaranteed traceability.
Supply support for W29N02KZDIBF TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash and SRAM, with over 30 years of manufacturing experience and ISO/TS 16949 certification.
The W29N02KZDIBF TR belongs to Winbond's W29N02KZ/W family of SLC NAND Flash devices designed specifically for embedded systems demanding high reliability, low voltage operation, and space-efficient packaging in industrial and medical applications.
FAQ
What is the operating voltage range for the W29N02KZDIBF TR?
The W29N02KZDIBF TR operates from 1.7V to 1.95V - a tightly regulated 1.8V nominal supply. This range ensures compatibility with modern low-power SoCs and eliminates need for external level shifters. All Vcc pins must be supplied within this window; exceeding 1.95V may cause permanent damage, while sub-1.7V operation results in undefined behavior or failure to execute commands. The W29N02KZDIBF TR draws only 13mA during active read, supporting battery-backed or energy-harvesting designs.
Does the W29N02KZDIBF TR support ONFI standards?
Yes, the W29N02KZDIBF TR complies with ONFI 2.3 timing specifications for asynchronous NAND Flash, including tREA (25ns), tR (35ns), and command protocol sequences. It does not implement ONFI's optional features like NV-DDR or parameter page auto-detection, but its timing margins and pin definitions align fully with standard ONFI 2.3 controllers. This allows plug-and-play integration with common ARM/Linux NAND drivers without custom timing tuning. The W29N02KZDIBF TR uses CLE/ALE/#CE/#WE/#RE signaling identical to ONFI-specified waveforms.
What package type is used by the W29N02KZDIBF TR?
The W29N02KZDIBF TR uses a 48-ball Very Fine-Pitch Ball Grid Array (VFBGA) with 0.5mm pitch and 8.0mm × 9.0mm body size (Package Code D). It is configured for x8 bus operation, with I/O[0–7], control signals, and dual Vcc/Vss pairs arranged per Winbond's standard ball map. This package supports automated reflow assembly and provides superior thermal performance over TSOP1 for dense industrial PCBs. The W29N02KZDIBF TR's footprint matches industry-standard 48-ball VFBGA land patterns, easing layout reuse.
How many program/erase cycles does the W29N02KZDIBF TR guarantee?
The W29N02KZDIBF TR guarantees 60,000 program/erase (P/E) cycles per block when used with 4-bit-per-544-byte ECC correction - a requirement enforced by Winbond's characterization and documented in the datasheet's endurance specification. This rating assumes proper wear leveling in the host FTL and adherence to recommended voltage/temperature conditions. Without adequate ECC, endurance drops significantly. The W29N02KZDIBF TR's SLC architecture inherently delivers higher cycle life than MLC or TLC NAND, making it suitable for applications with frequent firmware updates or cyclic logging.
What is the page and block structure of the W29N02KZDIBF TR?
The W29N02KZDIBF TR organizes memory into 2,048 blocks, each containing 64 pages of 2,176 bytes (2,048B main + 128B spare). Total capacity is 285,212,672 bytes (256MB). The spare area stores ECC parity, logical-to-physical mapping, and bad-block markers - essential for robust FTL implementation. Block erase clears all 64 pages simultaneously in ~2ms (typical), while page program writes one 2,048B sector plus associated metadata in ~250μs (typical). The W29N02KZDIBF TR's fixed geometry simplifies driver development and avoids variable-page complications found in newer NAND generations.
W29N02KZDIBF TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FLASH
- Technology:
- FLASH - NAND (SLC)
- Memory Size:
- 2Gbit
- Memory Organization:
- 256M x 8
- Memory Interface:
- -
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 25ns
- Access Time:
- 22 ns
- Voltage - Supply:
- 1.7V ~ 1.95V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (8x6.5)
W29N02KZDIBF TR FAQ
1.How can I place an order for W29N02KZDIBF TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W29N02KZDIBF TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W29N02KZDIBF TR reliable?
The price and inventory of W29N02KZDIBF TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N02KZDIBF TR is usually 5 days.
3.What payment methods are accepted for W29N02KZDIBF TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N02KZDIBF TR transactions.
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4.How is shipping managed for W29N02KZDIBF TR?
W29N02KZDIBF TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W29N02KZDIBF TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W29N02KZDIBF TR?
For technical support, including W29N02KZDIBF TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N02KZDIBF TR requirements.
6.How does Aetrix verify that W29N02KZDIBF TR is sourced from the original manufacturer or authorized distributors?
All W29N02KZDIBF TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N02KZDIBF TR meets industry standards.
7.What is the process for return or replacement of W29N02KZDIBF TR?
All W29N02KZDIBF TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N02KZDIBF TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W29N02KZDIBF TR part is unused and in its original packaging.
Return procedure for W29N02KZDIBF TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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