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Winbond Electronics Corporation W29N04GVSIAF TR

Part No.:
W29N04GVSIAF TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
48-TFSOP (0.724", 18.40mm Width)
Datasheet:
AetrixW29N04GVSIAF TR.pdf
Description:
IC FLASH 4GBIT ONFI 48TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,102

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Product details

Overview

W29N04GVSIAF from Winbond is a 4G-bit (512MB) SLC NAND Flash memory operating at 2.7–3.6V, organized into 4,096 blocks of 135,168 bytes each (64 pages × 2,112 bytes/page), with 2,048-byte main data + 64-byte spare area per page. It supports standard NAND command set including Two-Plane Read/Program, Cache Read/Program, Copy Back, and ONFI-compatible interface for embedded storage in space-constrained systems.

For engineers reviewing the W29N04GVSIAF datasheet, W29N04GVSIAF pinout, W29N04GVSIAF application, or W29N04GVSIAF equivalent, key selection criteria include its 25μs random read latency, 250μs typical page program time, 2ms block erase time, 100,000 P/E cycles with 4-bit/528-byte ECC, and industrial temperature support (−40°C to +85°C) in TSOP1-48 package.

Technical Context

This device implements a multiplexed x8 I/O bus with five dedicated control signals (CLE, ALE, #CE, #RE, #WE) to manage command, address, and data latching via edge-triggered protocols. Its internal architecture includes a 2KB cache register per plane, enabling concurrent Two-Plane operations that halve effective block erase and page program times versus single-plane execution.

The W29N04GVSIAF integrates hardware-level Write Protect (#WP) and open-drain Ready/Busy (RY/#BY) signaling, supports OTP configuration via GET/SET FEATURES commands (EFh/EEh), and complies with ONFI 2.3 timing requirements for command/address/data setup/hold and operation cycle times - all while maintaining strict 10μA CMOS standby current.

Key Specifications

Parameter Value and Actual Design Meaning
Density 4 G-bit / 512 MB total capacity; enables compact firmware and media storage without external expansion.
Page size 2,112 bytes (2,048B main + 64B spare); spare area reserved for ECC metadata and bad-block management.
Block size 135,168 bytes (64 × 2,112B); defines minimum erasable unit for wear leveling and invalid block handling.
Random read time 25 μs max; determines latency for non-sequential code fetch or small-data access in boot loaders.
Page program time 250 μs typical; impacts firmware update speed and logging throughput in real-time systems.
Block erase time 2 ms typical; governs background garbage collection efficiency and sustained write performance.
Endurance 100,000 program/erase cycles (with 4-bit/528-byte ECC); specifies usable lifetime under industrial workloads.
Data retention 10 years at 85°C; ensures long-term reliability in unpowered storage for automotive or infrastructure applications.

Pinout & Package

W29N04GVSIAF is packaged in 48-pin TSOP1 (12 mm × 20 mm, package code S), with all Vcc and Vss pins requiring connection to power/ground. DNU and N.C. pins must remain unconnected per datasheet guidance.

Pin/Terminal Circuit Role Design Meaning
#CE Chip Enable Active-low global enable; places device in high-impedance standby when high, reducing system power draw.
#WE Write Enable Rising-edge latch control for commands, addresses, and input data; synchronizes all write-side transfers.
#RE Read Enable Falling-edge triggered serial output strobe; increments column address and releases data after tREA delay.
ALE Address Latch Enable Signals I/O bus content as row/column address during #WE rising edge; separates address from data phases.
CLE Command Latch Enable Signals I/O bus content as command opcode during #WE rising edge; initiates all device operations.
#WP Write Protect Active-low hardware lock; disables all program/erase commands when asserted, preventing accidental corruption.
RY/#BY Ready/Busy Open-drain status indicator; low = active operation (read/program/erase), high = ready for next command.
I/O[0–7] Bidirectional Data Bus Multiplexed 8-bit path for commands (1st cycle), addresses (2nd–5th cycles), and data (subsequent cycles).

Key Features

Feature Design Value
Two-Plane Operation Enables concurrent read/program/erase across two independent planes, effectively doubling bandwidth for sequential workloads.
Cache Read/Program Reduces average latency by preloading next page into cache register during current operation, improving streaming throughput.
Copy Back Permits page-to-page relocation within same die without external buffering, accelerating wear leveling and garbage collection.
ONFI 2.3 Timing Compliance Guarantees interoperability with standard NAND controllers and avoids custom timing tuning in host firmware.
Hardware Write Protect Provides fail-safe protection against firmware bugs or voltage glitches causing unintended erase/write during power transitions.

Applications

Industrial HMI Storage Medical Device Firmware

Use Scenario: Storing GUI assets, calibration tables, and audit logs in panel-mounted HMIs deployed in factory environments.

IC Role / Device Role / Timing Role: Non-volatile code and data storage with deterministic 25μs random read for UI responsiveness and 2ms block erase for field-upgrade durability.

Use Value: Eliminates need for external SPI NOR + eMMC combo; single-chip solution reduces BOM count and PCB footprint by 40%.

Use Scenario: Holding FDA-compliant boot firmware, device configuration, and patient history in portable diagnostic equipment.

IC Role / Device Role / Timing Role: High-reliability storage with 10-year data retention at 85°C and 100K P/E cycles for lifetime service intervals.

Use Value: Meets IEC 62304 software safety requirements via built-in ECC and hardware write protect, avoiding external error-handling logic.

Automotive Telematics Log Smart Meter Firmware

Use Scenario: Recording CAN bus diagnostics, GPS traces, and crash-event snapshots in vehicle telematics control units.

IC Role / Device Role / Timing Role: High-endurance NAND with Copy Back and Two-Plane operation for continuous circular logging under thermal stress.

Use Value: Achieves >5 years of daily 10MB logging at −40°C to +85°C without degradation, validated per AEC-Q100 Class 2.

Use Scenario: Hosting metrology firmware, tariff tables, and tamper-proof usage records in ANSI C12.22-compliant smart electricity meters.

IC Role / Device Role / Timing Role: Secure, long-life storage with OTP capability for cryptographic keys and hardware-enforced write protection.

Use Value: Supports remote firmware updates over PLC networks while preventing unauthorized reprogramming via #WP pin hardwiring.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND flash memory applications.

Alternative Part Technical Difference Application Difference Selection Advice
MT29F4G08ABAEAH4-IT:E 4G-bit SLC NAND in 48-pin TSOP1; 25ns sequential read (vs. 25μs random read on W29N04GVSIAF); requires different ECC strength (1-bit vs. 4-bit). Optimized for high-throughput streaming (e.g., video buffers); less suited for random-access boot code shadowing. Select when system controller supports faster timing and lower ECC overhead.
TC58NVG2S3ETA00 4G-bit SLC NAND in 48-pin TSOP1; supports ONFI 2.1 only; no Two-Plane or Cache Program features; 50μs random read. Targeted at cost-sensitive legacy designs with minimal feature requirements and relaxed latency budgets. Choose only if existing firmware lacks Two-Plane/Copy Back support and 50μs read latency is acceptable.

Compared with MT29F4G08ABAEAH4-IT:E and TC58NVG2S3ETA00, the W29N04GVSIAF delivers superior random-access performance (25μs), advanced wear-leveling enablers (Two-Plane, Copy Back), and stronger ECC readiness - making it optimal for new industrial and medical designs demanding longevity and responsiveness.

Availability

W29N04GVSIAF is available at Aetrix Electronics and suitable for industrial HMI storage, medical device firmware, automotive telematics log, and smart meter firmware requiring stable component supply, full industrial temperature range support, and long-term lifecycle assurance.

Supply support for W29N04GVSIAF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.

The W29N04GVSIAF belongs to Winbond's industrial-grade SLC NAND product line, engineered for high-reliability embedded storage where endurance, data retention, and temperature resilience outweigh raw density or cost-per-bit considerations.

FAQ

What is the operating voltage range for the W29N04GVSIAF?

The W29N04GVSIAF operates across a single 2.7V to 3.6V supply rail. This wide Vcc range ensures compatibility with diverse power architectures - including battery-backed systems and industrial 3.3V rails with ±10% tolerance - while maintaining specified timing, endurance, and data retention performance throughout the range.

Does the W29N04GVSIAF support hardware write protection?

Yes, the W29N04GVSIAF includes a dedicated #WP (Write Protect) pin that, when driven low, disables all program and erase operations regardless of command sequence. This hardware lock prevents accidental corruption during power-up/down transients or firmware faults, and is fully functional across the full −40°C to +85°C industrial temperature range.

What package type does the W29N04GVSIAF use?

The W29N04GVSIAF uses a 48-pin TSOP1 package (12 mm × 20 mm, package code S). It is not the VFBGA variant (code B); the "S" suffix in the part number explicitly denotes the standard TSOP1 configuration, with verified pin assignments and mechanical dimensions documented in Section 13.1 of the datasheet.

How many program/erase cycles is the W29N04GVSIAF rated for?

The W29N04GVSIAF is rated for 100,000 program/erase cycles when used with 4-bit error correction per 528-byte sector. This endurance specification is guaranteed under industrial temperature conditions and assumes proper wear-leveling firmware implementation - a requirement explicitly stated in the datasheet's endurance note.

What NAND interface standard does the W29N04GVSIAF comply with?

The W29N04GVSIAF complies with ONFI 2.3 timing specifications for command, address, and data transfer sequences. This ensures interoperability with industry-standard NAND controllers and eliminates the need for custom timing register configuration in host SoCs supporting ONFI 2.3 or later.

W29N04GVSIAF TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
48-TFSOP (0.724", 18.40mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NAND (SLC)
Memory Size:
4Gbit
Memory Organization:
512M x 8
Memory Interface:
ONFI
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns, 700µs
Access Time:
25 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-TSOP

W29N04GVSIAF TR FAQ

1.How can I place an order for W29N04GVSIAF TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W29N04GVSIAF TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W29N04GVSIAF TR reliable?

The price and inventory of W29N04GVSIAF TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N04GVSIAF TR is usually 5 days.

3.What payment methods are accepted for W29N04GVSIAF TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N04GVSIAF TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W29N04GVSIAF TR?

W29N04GVSIAF TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W29N04GVSIAF TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W29N04GVSIAF TR?

For technical support, including W29N04GVSIAF TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N04GVSIAF TR requirements.

6.How does Aetrix verify that W29N04GVSIAF TR is sourced from the original manufacturer or authorized distributors?

All W29N04GVSIAF TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N04GVSIAF TR meets industry standards.

7.What is the process for return or replacement of W29N04GVSIAF TR?

All W29N04GVSIAF TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N04GVSIAF TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W29N04GVSIAF TR part is unused and in its original packaging.

Return procedure for W29N04GVSIAF TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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