Winbond Electronics Corporation W29N04KZBIBF TR

Overview

W29N04KZBIBF from Winbond is a 4G-bit (512MB) single-level cell (SLC) NAND Flash memory operating at 1.7V–1.95V, organized into 4,096 erasable blocks of 139,264 bytes each, with 2,176-byte pages (2,048B main + 128B spare), supporting x8/x16 bus widths and ONFI-compatible command set for embedded code shadowing, solid-state storage, and media data retention in space-constrained industrial systems.

For engineers reviewing the W29N04KZBIBF datasheet, W29N04KZBIBF pinout, W29N04KZBIBF application, or W29N04KZBIBF equivalent, key selection considerations include its 25μs random read latency, 250μs typical page program time, 60,000 P/E cycle endurance with 4-bit/544-byte ECC, 10-year data retention, and dual-plane operation support for concurrent read/write across physical block planes.

Technical Context

This SLC NAND device implements a multiplexed I/O interface with five dedicated control signals (CLE, ALE, #CE, #RE, #WE), open-drain RY/#BY status output, and #WP write protection - enabling standard NAND protocol execution without external address latches. Its internal architecture includes a high-voltage generator, row/column decoders, and a 2,176-byte data register to support sequential and random access modes.

It supports two-plane operations (simultaneous read/program/erase on even- and odd-numbered block groups), copy-back programming (on-die data relocation without host I/O), and enhanced status reporting (78h command), all compliant with ONFI 2.3 timing and command definitions for interoperability with standard NAND controllers.

Key Specifications

Pinout & Package

W29N04KZBIBF is packaged in a 63-ball VFBGA (package code B), footprint-optimized for high-density PCB layouts. Ball pitch is 0.8mm; body size is 9mm × 11mm × 1.0mm max. All Vcc and Vss balls must be connected per datasheet requirement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Compared with MT29F4G08ABAEAH4-IT:E and TC58NVG2S3ETA00, W29N04KZBIBF offers ONFI 2.3 compliance for plug-and-play controller integration, 1.8V operation for ultra-low-power systems, and VFBGA packaging for space-constrained layouts - making it optimal for new industrial and automotive designs requiring standardized NAND interfaces.

Availability

W29N04KZBIBF is available at Aetrix Electronics and suitable for industrial HMI storage, medical device firmware, automotive infotainment, and industrial PLC log buffer applications requiring stable component supply, long-term lifecycle assurance, and guaranteed traceable sourcing.

Supply support for W29N04KZBIBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.

The W29N series targets embedded systems needing reliable, low-voltage, high-endurance NAND Flash with ONFI-standardized interfaces - designed specifically for code storage, firmware updates, and mission-critical data logging where NOR density or cost is prohibitive.

FAQ

What is the operating voltage range for W29N04KZBIBF?

W29N04KZBIBF operates from 1.7V to 1.95V, with typical performance characterized at 1.8V. This narrow 1.8V supply range enables ultra-low-power system design and eliminates need for voltage translation in modern 1.8V SoC platforms. The device does not support 3.3V or dual-voltage operation - using outside this range may cause functional failure or reduced endurance.

Does W29N04KZBIBF support ONFI-compliant timing and commands?

Yes, W29N04KZBIBF fully complies with ONFI 2.3 specifications for command set, timing parameters, and electrical interface. It supports standard commands (00h, 30h, 80h, 10h, 60h, D0h), timing diagrams (tREA, tR, tPROG), and features like Get/Set Features (EEh/EFh). This ensures interoperability with off-the-shelf ONFI NAND controllers without custom timing tuning.

What package type is used for W29N04KZBIBF?

W29N04KZBIBF uses a 63-ball Very Fine-Pitch Ball Grid Array (VFBGA) package with 0.8mm ball pitch and 9mm × 11mm body size. This package is optimized for high-density PCB layouts and supports both x8 and x16 configurations - though W29N04KZBIBF is configured for x8 operation. Pin assignments match Figure 3-2 in the official datasheet.

How many program/erase cycles does W29N04KZBIBF guarantee?

W29N04KZBIBF guarantees 60,000 program/erase cycles when used with 4-bit/544-byte ECC correction, as specified in the datasheet. This endurance rating assumes proper wear-leveling firmware and adherence to recommended voltage/timing margins. Without ECC, endurance drops significantly - system-level error correction is mandatory for sustained operation.

What is the purpose of the RY/#BY pin on W29N04KZBIBF?

The RY/#BY pin on W29N04KZBIBF is an open-drain Ready/Busy output that signals active internal operations: low indicates ongoing read, program, or erase; high confirms completion. It enables efficient polling or interrupt-driven host control - critical for deterministic timing in real-time embedded systems. Pull-up resistor (typically 10kΩ) is required externally per datasheet guidelines.