Winbond Electronics Corporation W29N04KZSIBG TR

Overview

W29N04KZSIBG TR from Winbond is a 4G-bit (512MB) single-level cell (SLC) NAND Flash memory operating at 1.7–1.95V, organized into 2,048 blocks of 64 pages each (4,352 bytes/page), with x8/x16 bus interface and standard NAND command set. It delivers 25 µs random read access and 250 µs typical page program time, supporting code shadowing, media storage, and embedded solid-state applications.

For engineers reviewing the W29N04KZSIBG TR datasheet, W29N04KZSIBG TR pinout, W29N04KZSIBG TR application, or W29N04KZSIBG TR equivalent, key selection criteria include industrial temperature support (–40°C to +85°C), ONFI-compatible control interface (CLE/ALE/#CE/#WE/#RE), 60,000 program/erase cycles, and VFBGA-63 (x8) package compatibility for space-constrained designs.

Technical Context

The W29N04KZSIBG TR implements a standard NAND architecture with multiplexed I/O bus handling commands, addresses, and data via CLE and ALE strobes. Its internal logic includes dedicated Command and Address Registers, High-Voltage Generator, and Data Register synchronized to #WE and #RE edges.

It supports full ONFI 2.3–compatible operations including PAGE READ (00h–30h), PAGE PROGRAM (80h–10h), BLOCK ERASE (60h–D0h), COPY BACK, and GET/SET FEATURES (EEh/EFh). The device uses open-drain RY/#BY for status monitoring and features hardware write protection via active-low #WP.

Key Specifications

Pinout & Package

W29N04KZSIBG TR is packaged in a 63-ball Very Fine-Pitch Ball Grid Array (VFBGA) with 0.5 mm pitch, footprint 9.0 × 11.0 mm, suitable for high-density PCB layouts. Pin assignments are defined for x8 bus configuration per Figure 3-2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SLC NAND flash memory applications.

Compared with MT29F4G08ABAEAH4-IT:E and TC58NVG2S3ETA00, W29N04KZSIBG TR offers superior 10-year data retention and 60,000-cycle endurance at 1.8V, making it optimal for industrial firmware storage where long-term bit integrity and thermal stability are mandatory.

Availability

W29N04KZSIBG TR is available at Aetrix Electronics and suitable for industrial HMI storage, embedded boot media, medical data logging, and smart meter firmware archive applications requiring stable component supply, long-lifecycle assurance, and qualified SLC NAND performance.

Supply support for W29N04KZSIBG TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and communications markets.

The W29N series targets high-reliability embedded systems needing SLC NAND with industrial temperature support, ONFI compliance, and robust ECC-ready architecture for firmware and data storage.

FAQ

What is the operating voltage range for W29N04KZSIBG TR?

W29N04KZSIBG TR operates from 1.7 V to 1.95 V, optimized for low-power 1.8 V system interfaces. This narrow range ensures stable NAND array operation while minimizing I/O voltage translation complexity in modern SoC designs. The device's DC characteristics-including 13 mA typical active read current and 10 µA standby-are fully specified across this range per Table 10-2.

Does W29N04KZSIBG TR support ONFI commands?

Yes, W29N04KZSIBG TR supports ONFI 2.3–compliant commands including GET FEATURES (EEh) and SET FEATURES (EFh), as documented in Section 9.6 of the datasheet. These enable dynamic configuration of timing parameters, ECC modes, and vendor-specific features-critical for interoperability with standardized NAND controllers.

What package type is used for W29N04KZSIBG TR?

W29N04KZSIBG TR uses a 63-ball Very Fine-Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch and 9.0 × 11.0 mm body size (Package Code B). Pin assignments are defined for x8 bus operation per Figure 3-2, and the package supports automated reflow assembly per JEDEC J-STD-020.

How many program/erase cycles does W29N04KZSIBG TR guarantee?

W29N04KZSIBG TR guarantees 60,000 program/erase cycles when used with 8-bit/544-byte ECC, as stated in Section 2 Features and Table 10-7. This endurance rating is validated under industrial temperature conditions and forms the basis for wear-leveling algorithm design in host firmware.

What is the page and block structure of W29N04KZSIBG TR?

W29N04KZSIBG TR organizes memory into 2,048 erasable blocks, each containing 64 programmable pages of 4,352 bytes (4,096 main + 256 spare). This yields 512 MB total capacity. The spare area is reserved for ECC, bad-block markers, and logical-to-physical mapping metadata-enabling robust data integrity in embedded applications.