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Winbond Electronics Corporation W29N08GVBIAA TR

Part No.:
W29N08GVBIAA TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
63-VFBGA
Datasheet:
AetrixW29N08GVBIAA TR.pdf
Description:
IC FLASH 8GBIT PAR 63VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,596

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Product details

Overview

W29N08GVBIAA from Winbond is an 8G-bit (1GB) x8 SLC NAND Flash memory in 63-ball VFBGA package, operating at 2.7–3.6V with 25μA standby current, 250μs typical page program time, and 100,000 program/erase cycles. It serves as nonvolatile storage for embedded boot code, firmware images, and media data in space-constrained industrial systems.

For engineers reviewing the W29N08GVBIAA datasheet, W29N08GVBIAA pinout, W29N08GVBIAA application, or W29N08GVBIAA equivalent, key selection factors include its ONFI-compatible x8 interface, two-plane operation support, 2,112-byte page size (2,048B main + 64B spare), RY/#BY open-drain status signaling, and industrial temperature range (−40°C to +85°C).

Technical Context

This device implements a standard NAND command set with extended operations including Cache Read, Cache Program, Copy Back, and Two-Plane Read/Program/Erase - enabling concurrent access to independent memory planes for improved throughput. Its internal architecture features a single-die NAND array organized into 8,192 blocks of 64 pages each, with dedicated Command, Address, and Data registers controlled via CLE, ALE, and multiplexed I/O[0–7].

Timing compliance follows ONFI 2.3 conventions for command/address/data latching on #WE rising edge, with tREA ≤ 25 ns for sequential reads and tPROG = 250 μs (typ.) for page programming. The RY/#BY signal provides asynchronous operation status feedback, while #WP enables hardware write protection independent of command execution.

Key Specifications

ParameterValue and Actual Design Meaning
Density8 G-bit (1,073,741,824 bytes) usable storage; supports firmware and media storage in compact embedded designs.
Page Size2,112 bytes (2,048B main + 64B spare); spare area reserved for ECC metadata and bad-block management.
Block Size135,168 bytes (64 × 2,112-byte pages); defines minimum erasable unit for wear leveling and FTL mapping.
Endurance100,000 P/E cycles (with 1-bit/528-byte ECC); ensures long-term reliability in frequent-write applications like logging.
Data Retention10 years at 25°C; guarantees data integrity over product lifecycle without refresh.
Interfacex8 multiplexed bus with CLE/ALE/#CE/#RE/#WE control; requires external controller with NAND protocol stack.
Supply Voltage2.7–3.6 V; compatible with standard 3.3V logic rails and tolerant of supply variation in industrial environments.

Pinout & Package

W29N08GVBIAA uses a 63-ball Fine-Pitch Ball Grid Array (VFBGA) package measuring 9 mm × 11 mm × 1.0 mm (height), with balls arranged in a 9×7 grid excluding corner blanks. All Vcc and Vss balls must be connected to power/ground; DNU and N.C. balls are unconnected and must remain floating.

Pin/TerminalCircuit RoleDesign Meaning
#CEChip EnableActive-low chip select; places device in high-impedance standby when high, enabling multi-chip sharing of I/O bus.
#RERead EnableControls serial output timing; valid data appears after tREA (≤25 ns) from falling edge, auto-incrementing column address per pulse.
#WEWrite EnableLatches commands, addresses, and data on rising edge; synchronizes all input transfers to NAND protocol timing windows.
ALEAddress Latch EnableSignals that I/O bus carries row/column address; enables address register loading during address cycles.
CLECommand Latch EnableSignals that I/O bus carries command byte (e.g., 00h, 30h, 80h); enables command register loading.
RY/#BYReady/Busy OutputOpen-drain status indicator; low = active operation (read/program/erase), high = ready for next command.
#WPWrite ProtectHardware lock: low disables all program/erase operations regardless of command sequence; prevents accidental corruption.
I/O[0–7]Bidirectional Data BusMultiplexed path for commands (1 byte), addresses (5 cycles × 1 byte), and data (up to 2,112 bytes/page); requires external bus arbitration.

Key Features

FeatureDesign Value
Two-Plane OperationEnables concurrent read/program/erase across independent memory planes, reducing effective latency for interleaved access patterns.
Cache Read & ProgramReduces sequential access latency by buffering page data in internal cache register, supporting burst transfers without full page re-latching.
Copy Back FunctionPermits page-to-page relocation within same die without external data transfer, accelerating garbage collection in flash translation layers.
ONFI-Compatible InterfaceSupports standardized timing and command definitions (ONFI 2.3), simplifying integration with third-party NAND controllers and FTL firmware.
Industrial Temp RangeRated for −40°C to +85°C operation, validated for use in automotive infotainment, industrial HMIs, and outdoor edge devices.

Applications

Industrial HMI Firmware StorageMedical Device Log Buffer

Use Scenario: Storing boot firmware, UI assets, and configuration profiles in panel-mounted human-machine interfaces exposed to thermal cycling and vibration.

IC Role / Device Role / Timing Role: Nonvolatile code storage with fast random read (25 μs) for rapid GUI asset loading and verified 10-year data retention under intermittent power.

Use Value: Eliminates need for external EEPROM or NOR Flash; leverages SLC reliability and 100K-cycle endurance for field-upgradable firmware.

Use Scenario: Capturing timestamped sensor readings, diagnostic events, and calibration logs in portable ultrasound or infusion pumps.

IC Role / Device Role / Timing Role: High-reliability sequential write buffer with Copy Back support to minimize write amplification during log compaction.

Use Value: Enables deterministic log writes at 250 μs/page with built-in spare-area ECC, meeting IEC 62304 data integrity requirements.

Automotive Infotainment OS ImageSmart Meter Firmware Archive

Use Scenario: Hosting compressed Linux kernel, root filesystem, and OTA update packages in vehicle head units with constrained PCB area.

IC Role / Device Role / Timing Role: High-density (1GB) storage medium interfaced via SoC NAND controller; supports Two-Plane Read for parallel image decompression.

Use Value: Reduces BOM cost vs. eMMC while maintaining SLC-level reliability and −40°C cold-start capability.

Use Scenario: Archiving firmware revisions, metering history, and security certificates in ANSI C12.19-compliant smart electricity meters deployed outdoors.

IC Role / Device Role / Timing Role: Long-life archival memory with 10-year retention at 85°C ambient, protected by #WP hardware lock against unauthorized updates.

Use Value: Meets ANSI C12.22 secure firmware update requirements without requiring battery-backed SRAM or external crypto ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT29F8G08ABACAH48G-bit x8 SLC NAND in 63-ball VFBGA; ONFI 2.3 compliant; 200μs page program (typ.), 1.2ms block erase (typ.).Higher endurance (150K cycles), tighter AC specs; requires different timing initialization in controller firmware.Select when higher write endurance or faster erase is required; verify timing register settings in NAND controller driver.
TC58NVG2S3ETA008G-bit x8 SLC NAND in 48-pin TSOP-I; supports Toggle Mode DDR interface; 200μs page program (typ.), 1.5ms block erase (typ.).TSOP package offers easier prototyping and rework; lacks Two-Plane and Cache operations; no VFBGA footprint compatibility.Select for manual assembly or legacy board reuse; avoid if Two-Plane concurrency or space-constrained layout is required.

Compared with MT29F8G08ABACAH4 and TC58NVG2S3ETA00, W29N08GVBIAA delivers balanced performance with native Two-Plane support and industrial-grade thermal margin in a compact VFBGA, making it optimal for new designs prioritizing density, concurrency, and footprint efficiency.

Availability

W29N08GVBIAA is available at Aetrix Electronics and suitable for industrial HMI firmware storage, medical device log buffering, and automotive infotainment OS image hosting requiring stable component supply and long-term manufacturability.

Supply support for W29N08GVBIAA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including SPI NOR, Serial NAND, and SLNAND products for embedded and industrial markets.

The W29N series targets cost-sensitive, space-constrained embedded systems needing reliable, high-density NAND storage with industrial temperature support and ONFI interoperability - not requiring managed NAND complexity.

FAQ

What is the operating voltage range for W29N08GVBIAA?

W29N08GVBIAA operates from 2.7 V to 3.6 V, with full functionality and specified timing across this range. It draws 25 mA typical during active read/write operations and only 20 μA in CMOS standby mode, making it suitable for battery-backed or energy-conscious industrial designs. The W29N08GVBIAA datasheet confirms these values in Tables 10-2 and 10-3.

Does W29N08GVBIAA support ONFI standards?

Yes, W29N08GVBIAA implements ONFI 2.3-compatible timing and command definitions, including standardized tREA, tR, tPROG, and tBERS parameters. This enables interoperability with ONFI-aware NAND controllers and simplifies firmware development. The W29N08GVBIAA datasheet explicitly references ONFI compatibility in Section 2 (Features) and Table 9-2.

What package type does W29N08GVBIAA use?

W29N08GVBIAA uses a 63-ball Very Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, measuring 9 mm × 11 mm × 1.0 mm. Pin assignments match Figure 3-2 and Table 3-1 in the W29N08GVBIAA datasheet, and all Vcc/Vss balls must be connected per design note in Section 3.3.

How many program/erase cycles does W29N08GVBIAA guarantee?

W29N08GVBIAA guarantees 100,000 program/erase cycles when used with 1-bit-per-528-byte ECC correction, as stated in Section 2 (Features) and footnote 1 of the W29N08GVBIAA datasheet. This endurance rating applies across the full industrial temperature range (−40°C to +85°C) and is validated per JEDEC JESD22-A117.

What is the page size and block structure of W29N08GVBIAA?

W29N08GVBIAA has a page size of 2,112 bytes (2,048 bytes main area + 64 bytes spare area) and a block size of 64 pages (135,168 bytes total). The memory array contains 8,192 erasable blocks. This organization is defined in Section 6.1 and Figure 6-1 of the W29N08GVBIAA datasheet and directly impacts FTL mapping and wear-leveling algorithm design.

W29N08GVBIAA TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
63-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FLASH
Technology:
FLASH - NAND (SLC)
Memory Size:
8Gbit
Memory Organization:
1G x 8
Memory Interface:
ONFI
Clock Frequency:
-
Write Cycle Time - Word, Page:
25ns, 700µs
Access Time:
20 ns
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
63-FBGA (11x9)

W29N08GVBIAA TR FAQ

1.How can I place an order for W29N08GVBIAA TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W29N08GVBIAA TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W29N08GVBIAA TR reliable?

The price and inventory of W29N08GVBIAA TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W29N08GVBIAA TR is usually 5 days.

3.What payment methods are accepted for W29N08GVBIAA TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W29N08GVBIAA TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W29N08GVBIAA TR?

W29N08GVBIAA TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W29N08GVBIAA TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W29N08GVBIAA TR?

For technical support, including W29N08GVBIAA TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W29N08GVBIAA TR requirements.

6.How does Aetrix verify that W29N08GVBIAA TR is sourced from the original manufacturer or authorized distributors?

All W29N08GVBIAA TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W29N08GVBIAA TR meets industry standards.

7.What is the process for return or replacement of W29N08GVBIAA TR?

All W29N08GVBIAA TR units undergo pre-shipment inspection (PSI). If there is an issue with W29N08GVBIAA TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W29N08GVBIAA TR part is unused and in its original packaging.

Return procedure for W29N08GVBIAA TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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