Winbond Electronics Corporation W29N08GZBIBF

Overview

W29N08GZBIBF from Winbond is an 8G-bit (1GB) single-supply 1.8V SLC NAND Flash memory in 63-ball VFBGA package, organized as 8,192 blocks × 64 pages × 2,112 bytes/page (2,048B main + 64B spare), supporting x8/x16 bus width, two-plane operations, and Copy Back for embedded storage in space-constrained systems.

For engineers reviewing the W29N08GZBIBF datasheet, W29N08GZBIBF pinout, W29N08GZBIBF application, or W29N08GZBIBF equivalent, key selection criteria include 1.8V operation, 25μs random read latency, 250μs typical page program time, 2ms block erase time, 100,000 P/E cycles with 4-bit/528-byte ECC, and industrial temperature support (–40°C to +85°C).

Technical Context

This device implements a standard ONFI-compatible NAND interface with multiplexed command/address/data on I/O[0–7], controlled by CLE, ALE, #CE, #WE, and #RE signals. Its internal architecture includes dual-plane memory array, cache register, and high-voltage generator enabling concurrent operations across planes.

It supports full command set compliance including Read ID (90h), Read Parameter Page (ECh), Read Status (70h/78h), Page Program (80h-10h), Two-Plane Page Program, Block Erase (60h-D0h), Copy Back (00h-35h/85h-10h), and SET/GET FEATURES (EFh/EEh) for configurable timing and protection modes.

Key Specifications

Pinout & Package

W29N08GZBIBF uses a 63-ball Very Fine Pitch Ball Grid Array (VFBGA) package (package code B), footprint 9 mm × 11 mm × 1.0 mm, suitable for high-density PCB layouts in portable and industrial modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND flash memory applications.

Compared with MT29F8G08ABACAWP-AIT and TC58NVG2S3ETA00, W29N08GZBIBF delivers higher endurance (100K vs. 50K/30K cycles), integrated Copy Back for efficient FTL, and guaranteed two-plane concurrency-making it optimal for long-life, high-reliability embedded storage requiring minimal host overhead.

Availability

W29N08GZBIBF is available at Aetrix Electronics and suitable for embedded boot storage, firmware logging, media buffering, and secure configuration storage requiring stable component supply across industrial temperature ranges and multi-year production cycles.

Supply support for W29N08GZBIBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.

W29N08GZBIBF belongs to Winbond's W29N08GW/Z family of SLC NAND Flash devices engineered for robust, low-power embedded storage in space- and power-constrained systems demanding high reliability and long-term data integrity.

FAQ

What is the operating voltage range for W29N08GZBIBF?

W29N08GZBIBF operates from 1.7 V to 1.95 V, with nominal 1.8 V supply. This narrow range simplifies power delivery design and improves noise immunity compared to wider-tolerance NAND devices. All DC and AC specifications-including 13 mA typical active current and 20 μA standby-are validated across this full range. The W29N08GZBIBF datasheet specifies absolute maximum ratings up to 2.2 V, but sustained operation outside 1.7–1.95 V voids performance guarantees.

Does W29N08GZBIBF support both x8 and x16 bus widths?

Yes, W29N08GZBIBF supports both x8 and x16 configurations. In x8 mode, I/O[0–7] carry all commands, addresses, and data. In x16 mode, I/O[0–15] are used, requiring the 63-ball VFBGA package variant with extended pin mapping (as shown in Figure 3-3). Mode selection is determined by hardware strap or initialization sequence-not software configuration-and must be fixed at power-on. The W29N08GZBIBF pinout differs between modes, so PCB layout must match the selected bus width.

What is the purpose of the RY/#BY pin on W29N08GZBIBF?

The RY/#BY pin on W29N08GZBIBF is an open-drain Ready/Busy status indicator. It asserts low during active operations-including page read, page program, block erase, and Copy Back-and returns high upon completion. Host controllers use this signal for polling or interrupt-driven operation instead of command-status register reads, reducing bus traffic and improving real-time responsiveness. The W29N08GZBIBF specification defines tRHZ (max 100 ns) for high-to-low transition and tRLZ (max 100 ns) for low-to-high transition timing.

How does the Copy Back feature work in W29N08GZBIBF?

W29N08GZBIBF implements Copy Back as a two-phase internal operation: first, a source page is read into the cache register (using 00h-35h command sequence); second, that cached data is written to a destination page (using 85h-10h). No external data transfer occurs-the entire move happens inside the die. This reduces host CPU load and DDR bandwidth usage in wear-leveling and garbage collection. The W29N08GZBIBF supports both single-plane and two-plane Copy Back, with the latter enabling concurrent moves across planes.

Is W29N08GZBIBF compatible with ONFI standards?

W29N08GZBIBF is ONFI 2.3-compliant, supporting mandatory commands (e.g., Read ID, Read Parameter Page ECh), timing definitions, and electrical interface requirements. Its parameter page (address 00h–FFh) reports ONFI identifying codes in byte 20h, and the W29N08GZBIBF datasheet references ONFI timing measurement conditions (Table 10-4). However, it does not implement optional ONFI features like NV-DDR2 or deep power-down, remaining a synchronous, asynchronous-command NAND device.