Winbond Electronics Corporation W29N08GZSIBA TR

Overview

W29N08GZSIBA TR from Winbond is an 8G-bit (1GB) single-supply 1.8V SLC NAND Flash memory in 63-ball VFBGA package, organized as 8,192 blocks × 64 pages × 2,112 bytes/page (2,048B main + 64B spare), supporting x8/x16 bus width, two-plane operations, and Copy Back for embedded storage in space-constrained industrial systems.

For engineers reviewing the W29N08GZSIBA TR datasheet, W29N08GZSIBA TR pinout, W29N08GZSIBA TR application, or W29N08GZSIBA TR equivalent, key selection considerations include 1.8V operation, 25μs random read latency, 250μs typical page program time, 2ms block erase time, 100,000 P/E cycles with 1-bit/528-byte ECC, and ONFI-compatible command set including Read ID (90h), Read Parameter Page (ECh), and SET/GET FEATURES (EFh/EEh).

Technical Context

This device implements a standard NAND interface with multiplexed I/O bus and five dedicated control signals (CLE, ALE, #CE, #RE, #WE) to manage command, address, and data latching via edge-triggered protocols. It uses Single-Level Cell (SLC) technology with fixed 2,112-byte page size and 135,168-byte block size (64 pages), enabling deterministic timing for embedded firmware storage and media buffering.

Two-plane architecture allows concurrent operations across even- and odd-numbered block planes-e.g., simultaneous page read in one plane while programming in another-reducing effective latency in high-throughput applications. Ready/Busy (RY/#BY) open-drain output and Write Protect (#WP) provide real-time status monitoring and hardware-level write inhibition.

Key Specifications

Pinout & Package

W29N08GZSIBA TR is packaged in a 63-ball Very Fine Pitch Ball Grid Array (VFBGA), footprint 9mm × 11mm, pitch 0.8mm, suitable for high-density PCB layouts. Pin assignments support both x8 and x16 bus configurations; this variant uses x8 I/O mapping per datasheet Figure 3-2.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Compared with MT29F8G08ABACAWP-AITX and TC58NVG2S3ETA00, W29N08GZSIBA TR delivers superior 1.8V integration, smaller VFBGA footprint, faster random read (25μs), and unique Copy Back capability-making it optimal for space-constrained, high-reliability embedded systems requiring in-field data resilience.

Availability

W29N08GZSIBA TR is available at Aetrix Electronics and suitable for industrial HMI storage, medical device firmware, and automotive telematics requiring stable component supply, long-lifecycle support, and guaranteed industrial-plus temperature grade (-40°C to +105°C).

Supply support for W29N08GZSIBA TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets since 1987.

W29N08GZSIBA TR belongs to Winbond's W29N08GW/Z series of SLC NAND Flash devices designed specifically for high-reliability embedded storage where endurance, data retention, and compact packaging outweigh raw density or cost-per-bit concerns.

FAQ

What is the operating voltage range for W29N08GZSIBA TR?

W29N08GZSIBA TR operates from 1.7V to 1.95V, with typical performance specified at 1.8V. This narrow 1.8V supply range eliminates need for external voltage regulators in modern low-power SoC designs and ensures compatibility with 1.8V I/O domains without level shifters. All DC and AC timing parameters-including 25μs random read and 250μs page program-are validated across this full range.

Does W29N08GZSIBA TR support ONFI standards?

Yes, W29N08GZSIBA TR supports ONFI 2.3-compliant commands including Read Parameter Page (ECh), GET FEATURES (EEh), and SET FEATURES (EFh), enabling interoperability with ONFI-aware controllers. Its pinout and timing adhere to ONFI specifications for x8 mode, and Winbond confirms ONFI compatibility in the datasheet's Feature section and Pin Descriptions note.

What package type is used for W29N08GZSIBA TR?

W29N08GZSIBA TR uses a 63-ball Very Fine Pitch Ball Grid Array (VFBGA) package, code B, with 0.8mm ball pitch and 9mm × 11mm body size. This package supports both x8 and x16 bus widths; W29N08GZSIBA TR is configured for x8 operation per datasheet Figure 3-2 and ordering information Table 15-1.

How many program/erase cycles does W29N08GZSIBA TR guarantee?

W29N08GZSIBA TR guarantees 100,000 program/erase cycles when used with 1-bit-per-528-byte ECC correction, as specified in the Features section and confirmed in Table 10-7 (Program and Erase Characteristics). This endurance rating applies across the full industrial-plus temperature range (-40°C to +105°C) and is integral to its qualification for long-life embedded applications.

What is the purpose of the spare area in each page of W29N08GZSIBA TR?

Each 2,112-byte page of W29N08GZSIBA TR contains a 64-byte spare area used exclusively for error management-primarily storing ECC parity bits, logical-to-physical block mapping, and bad-block flags. This dedicated space enables robust on-the-fly correction and wear-leveling algorithms without consuming main-array capacity, and is required for achieving the rated 100,000-cycle endurance and 10-year data retention.