Winbond Electronics Corporation W29N08GZSIBF TR

Overview

W29N08GZSIBF from Winbond is an 8G-bit (1GB) single-supply 1.8V SLC NAND Flash memory in 63-ball VFBGA package, supporting x8/x16 bus width, two-plane operations, and Copy Back command. It delivers 25 µs random read access, 250 µs typical page program time, and 2 ms typical block erase time for embedded storage in space-constrained industrial systems.

For engineers reviewing the W29N08GZSIBF datasheet, W29N08GZSIBF pinout, W29N08GZSIBF application, or W29N08GZSIBF equivalent, key selection considerations include its 1.7–1.95 V operating range, ONFI-compatible interface, 100,000 program/erase cycles with 4-bit/528-byte ECC, and support for RY/#BY status monitoring and hardware write protection via #WP.

Technical Context

This device implements a standard NAND Flash architecture with multiplexed I/O bus, five dedicated control signals (CLE, ALE, #CE, #RE, #WE), and open-drain RY/#BY for asynchronous operation status feedback. Its dual-plane capability enables concurrent read/write/erase across even- and odd-numbered block groups to improve throughput.

The memory array is organized into 8,192 erasable blocks (64 pages × 135,168 bytes each), with each page containing 2,048 bytes main area + 64 bytes spare area for ECC and metadata. Command execution follows ONFI-compliant timing, including GET/SET FEATURES (EEh/EFh) for configurable parameters like read retry and cache settings.

Key Specifications

Pinout & Package

W29N08GZSIBF uses a 63-ball Very Fine Pitch Ball Grid Array (VFBGA) package (package code B), footprint-optimized for high-density PCB layouts. Pin assignments support both x8 and x16 configurations; ball layout matches Figure 3-2 (x8) and Figure 3-3 (x16) in the datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NAND Flash memory applications.

Compared with W29N08GZSIBF, MT29F8G08ABABH4-12IT:B demands voltage translation and forfeits concurrent-plane efficiency, while TC58NVG2S3HTAI0 trades endurance and retention for TSOP compatibility-making W29N08GZSIBF optimal for new 1.8V industrial designs requiring longevity and feature-rich operation.

Availability

W29N08GZSIBF is available at Aetrix Electronics and suitable for industrial HMI storage, embedded boot memory, smart meter firmware, and medical device log storage requiring stable component supply, long-lifecycle assurance, and guaranteed traceable sourcing.

Supply support for W29N08GZSIBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and mobile DRAM, serving industrial, automotive, and consumer markets.

W29N08GZSIBF belongs to Winbond's W29N08GW/Z family of SLC NAND Flash devices designed for high-reliability embedded storage where endurance, data retention, and ONFI interoperability are critical.

FAQ

What is the operating temperature range for W29N08GZSIBF?

W29N08GZSIBF is rated for Industrial Plus temperature operation from –40°C to +105°C. This extended range supports deployment in harsh environments such as factory automation controllers, outdoor smart meters, and transportation infrastructure equipment where ambient temperatures exceed standard industrial limits. The 10-year data retention specification applies across this full range.

Does W29N08GZSIBF support ONFI standards?

Yes, W29N08GZSIBF implements ONFI-compliant command sets and timing, including GET FEATURES (EEh) and SET FEATURES (EFh), enabling plug-and-play integration with ONFI-aware NAND controllers. Its interface adheres to ONFI 2.3 timing parameters for command, address, and data transfers, ensuring compatibility without custom driver development.

What package type does W29N08GZSIBF use?

W29N08GZSIBF uses a 63-ball Very Fine Pitch Ball Grid Array (VFBGA) package with 0.5 mm pitch and 9 mm × 11 mm body size. This compact footprint supports high-density PCB layouts in space-constrained applications such as handheld medical devices and modular PLCs, and is compatible with standard reflow profiles for lead-free assembly.

How many program/erase cycles does W29N08GZSIBF guarantee?

W29N08GZSIBF guarantees 100,000 program/erase cycles when used with 4-bit/528-byte ECC correction, as specified in the datasheet. This endurance rating is validated under worst-case conditions (85°C, full block cycling) and enables reliable operation in applications requiring frequent firmware updates or cyclic logging, such as industrial gateways and telemetry recorders.

What is the purpose of the RY/#BY pin on W29N08GZSIBF?

The RY/#BY pin on W29N08GZSIBF is an open-drain output indicating real-time device status: it asserts low during active read, program, or erase operations and returns high upon completion. This signal allows the host controller to poll asynchronously-eliminating fixed delay loops-and synchronize data transfers without CPU overhead, improving system efficiency in resource-constrained microcontrollers.