Winbond Electronics Corporation W631GG6KB-11

Overview

W631GG6KB-11 from Winbond is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) speed grade with CAS Latency 13, tAA = 13.91 ns, and operating temperature range 0°C ≤ TCASE ≤ 95°C. It features on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for power-up initialization in embedded computing and industrial control memory subsystems.

For engineers reviewing the W631GG6KB-11 datasheet, W631GG6KB-11 pinout, W631GG6KB-11 application, or W631GG6KB-11 equivalent, key selection criteria include DDR3-1866 timing compliance, 96-ball WBGA package compatibility, SSTL_15 interface voltage, and support for write leveling, MPR-based calibration, and dynamic ODT during burst writes.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3 architecture synchronized to differential CK/CK# inputs, with all commands latched at the crossing of CK rising and CK# falling edges. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling optimized command bus efficiency in high-speed memory controllers.

Internal timing is governed by programmable mode registers MR0–MR3, defining CAS Latency (CL = 6, 8, 10, 13), CAS Write Latency (CWL = 5, 6, 7, 9), partial array self-refresh (PASR), and dynamic ODT (Rtt_WR). DLL alignment ensures DQ/DQS edge-centering relative to CK, while ZQ calibration maintains 34 Ω output driver and ODT impedance accuracy across voltage and temperature.

Key Specifications

Pinout & Package

W631GG6KB-11 uses a 96-ball WBGA package with 0.8 mm ball pitch, arranged in a 9×13 grid. Ball assignment follows JEDEC-standard DDR3 layout with dedicated differential clock (CK/CK#), strobe (DQS/DQS#), address/control (A0–A12, BA0–BA2, RAS#/CAS#/WE#), data (DQ0–DQ15), mask (DMU/DML), and calibration (ZQ) terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W631GG6KB-11, both alternatives operate at lower data rates (1600 MT/s vs. 1866 MT/s), omit write leveling and MPR-based calibration, and lack PASR-making them unsuitable for thermally constrained or high-margin timing applications requiring DDR3-1866 compliance.

Availability

W631GG6KB-11 is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging workstations, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6KB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6KB-11 belongs to Winbond's high-reliability DDR3 SDRAM product line, designed specifically for industrial and embedded applications demanding extended temperature operation, robust signal integrity features (write leveling, dynamic ODT), and JEDEC-compliant DDR3-1866 performance.

FAQ

What is the maximum supported CAS Latency for W631GG6KB-11?

W631GG6KB-11 supports CAS Latency settings of 6, 8, 10, and 13. At its rated DDR3-1866 speed grade, it operates with CL = 13 (tAA = 13.91 ns). CL = 10 and CL = 8 are also valid for down-binned operation, but CL = 13 is the default and fully characterized setting for 1866 MT/s compliance per JEDEC specification.

Does W631GG6KB-11 support write leveling, and how is it implemented?

Yes, W631GG6KB-11 supports write leveling as defined in JEDEC DDR3 standard. It uses the Multi-Purpose Register (MPR) to output a predefined 128-bit pattern during READ commands. The memory controller adjusts per-lane DQS delay until the pattern is correctly captured, calibrating DQS-to-CK skew. This function is mandatory for reliable operation above 1600 MT/s and is enabled via MR3 configuration.

What is the purpose of the ZQ pin on W631GG6KB-11, and what external component is required?

The ZQ pin on W631GG6KB-11 serves as the reference terminal for factory-trimmed 34 Ω output driver and on-die termination (ODT) calibration. It must be connected to a single 240 Ω ±1 % precision resistor tied to ground. This external resistor enables ZQ calibration commands (ZQCL and ZQCS) to adjust internal impedance over voltage and temperature, maintaining signal integrity without manual layout tuning.

Can W631GG6KB-11 operate in Partial Array Self-Refresh (PASR) mode, and how is it configured?

Yes, W631GG6KB-11 supports Partial Array Self-Refresh (PASR) to reduce IDD6 current during low-activity periods. PASR is configured via Mode Register MR2 (bits A2–A0), allowing refresh of ¼, ½, or full array. When enabled, only banks specified in the MR2 setting are refreshed, cutting self-refresh power by up to 40 %-critical for fanless industrial systems operating at 95°C.

What is the function of the RESET# pin on W631GG6KB-11, and when must it be asserted?

The RESET# pin on W631GG6KB-11 provides asynchronous reset for power-up initialization and functional recovery. It must be held LOW for ≥200 ns after VDD/VDDQ stabilize and before the first CKE HIGH assertion. During normal operation, RESET# can be pulsed LOW to reinitialize the DLL and clear internal state-required after clock frequency changes or loss of lock conditions. W631GG6KB-11 will not accept commands until RESET# is released and tINIT ≥ 200 µs elapses.