Winbond Electronics Corporation W631GG6KB-12

Overview

W631GG6KB-12 from Winbond Electronics is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1600 (11-11-11) speed grade with CAS Latency options of 6, 7, 8, 9, 10, and 11, CWL of 5–8, and operating temperature range 0°C ≤ TCASE ≤ 95°C. It delivers 1600 Mb/sec/pin data rates in high-density memory subsystems for embedded computing and industrial controllers.

For engineers reviewing the W631GG6KB-12 datasheet, W631GG6KB-12 pinout, W631GG6KB-12 application, or W631GG6KB-12 equivalent, key selection considerations include its SSTL_15 interface compliance, programmable ODT (RTT_NOM/RTT_WR), ZQ calibration support, asynchronous RESET# pin, and 96-ball WBGA package with 9 mm × 13 mm footprint.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL aligns DQ and DQS transitions to CK/CK#, supports posted CAS with additive latency (AL = 0, CL−1, CL−2), and enables system-level timing calibration via write leveling and MPR read patterns.

The device supports synchronous and dynamic ODT modes, Auto Self-Refresh (ASR), Partial Array Self-Refresh (PASR), and dual power-down modes (Precharge and Active). It requires ZQ calibration using an external 240 Ω resistor and operates under JEDEC-compliant SSTL_15 signaling with differential CK/CK# and DQS/DQS# pairs.

Key Specifications

Pinout & Package

W631GG6KB-12 uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package with 0.8 mm ball pitch and 9 mm × 13 mm body size. Pinout follows JEDEC-standard DDR3 ball assignment for 16-bit x8-bank configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16JT-125:K and IS43TR16128B-125KBL, W631GG6KB-12 uniquely combines industrial temperature range (0°C–95°C), full DDR3 feature set (PASR, ASR, write leveling, MPR), and 1.5 V operation in a standard WBGA package-enabling robust, calibrated memory subsystems without voltage scaling or external calibration logic.

Availability

W631GG6KB-12 is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, medical imaging front-ends, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6KB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based global supplier of specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM, serving automotive, industrial, and communications markets since 1987.

The W631GG6KB-12 belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, JEDEC compliance, and advanced power management features like PASR and ASR.

FAQ

What is the maximum clock frequency supported by W631GG6KB-12?

W631GG6KB-12 supports a maximum clock frequency of 800 MHz, corresponding to DDR3-1600 operation (1600 Mb/sec/pin). This is confirmed by its speed grade designation "-12" and the datasheet's fCKMAX specification of 800 MHz under DDR3-1600 (11-11-11) timing. The device achieves this with CL settings of 6–11 and CWL of 5–8, subject to valid tAA, tRCD, and tRP constraints.

Does W631GG6KB-12 support on-die termination (ODT)?

Yes, W631GG6KB-12 supports both synchronous and dynamic ODT modes. It provides programmable termination impedances (RTT_NOM = 60/120/240 Ω; RTT_WR = 60/120 Ω) on DQ, DQS, and DM pins via mode registers MR1 and MR2. Dynamic ODT allows runtime switching of termination during write operations to improve signal integrity without affecting read paths.

What package type and dimensions does W631GG6KB-12 use?

W631GG6KB-12 uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. This compact, RoHS-compliant lead-free package is optimized for high-density PCB layouts in space-constrained industrial and networking applications, and matches JEDEC MO-270AB mechanical standards.

Can W631GG6KB-12 operate in partial array self-refresh (PASR) mode?

Yes, W631GG6KB-12 supports Partial Array Self-Refresh (PASR) as defined in MR2. PASR allows selective refresh of only active memory banks, reducing self-refresh current by up to 50 % compared to full-array refresh. This feature is especially valuable in battery-powered or thermally constrained systems where power efficiency is critical.

Is write leveling supported on W631GG6KB-12?

Yes, W631GG6KB-12 fully supports write leveling per JEDEC DDR3 specification. The feature uses the DQS strobe to calibrate DQS-to-CK skew during initialization, ensuring accurate write capture timing at high data rates. Write leveling is enabled via MR1 and requires MPR readback for verification - a capability explicitly documented in the W631GG6KB datasheet sections 8.9 and 8.10.