Winbond Electronics Corporation W631GG6KB12I TR

Overview

W631GG6KB12I TR from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3-1600 (11-11-11) speed grade with CAS Latency 6–11, CWL 5–8, and industrial temperature range (−40°C to +95°C). It features on-die termination (ODT), ZQ calibration, programmable additive latency, and asynchronous RESET# for robust system initialization in embedded and industrial memory subsystems.

For engineers reviewing the W631GG6KB12I TR datasheet, W631GG6KB12I TR pinout, W631GG6KB12I TR application, or W631GG6KB12I TR equivalent, key selection considerations include its 96-ball WBGA package, SSTL_15 interface compliance, 2K-byte page size, support for dynamic ODT and write leveling, and JEDEC DDR3-1600 timing at industrial temperature.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL aligns DQ/DQS transitions to CK/CK#, while bi-directional differential DQS/DQS# strobes are edge-aligned on reads and center-aligned on writes.

It supports programmable mode registers (MR0–MR3) for CAS Latency, CWL, ODT RTT values, PASR, ASR, and MPR-based timing calibration. The device uses asynchronous RESET# for power-up initialization and supports both synchronous and dynamic ODT modes with configurable termination impedances for data, DM, and DQS pairs.

Key Specifications

Pinout & Package

W631GG6KB12I TR is packaged in a 96-ball WBGA (9 mm × 13 mm) with 0.8 mm ball pitch. Ball layout follows JEDEC-standard DDR3 SDRAM pinout for 16-bit x8-bank configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16HA-125:E and IS43TR16128B-125KBL, W631GG6KB12I TR uniquely combines industrial temperature support, ZQ calibration, and pin-compatible DDR3-1600 performance in a single 96-ball WBGA package-enabling drop-in replacement in thermally demanding embedded systems without sacrificing signal integrity or calibration flexibility.

Availability

W631GG6KB12I TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging subsystems, and railway signaling gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6KB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6KB series targets high-reliability embedded systems requiring JEDEC-compliant DDR3 operation with extended temperature support, ZQ calibration, and advanced power management features like PASR and dynamic ODT.

FAQ

What is the maximum supported CAS Latency for W631GG6KB12I TR at DDR3-1600 speed?

W631GG6KB12I TR supports CAS Latency settings of 6, 7, 8, 9, 10, and 11 at DDR3-1600 speed. The maximum CL is 11, corresponding to a tAA of 13.75 ns minimum (CL × tCK = 11 × 1.25 ns). This setting is validated across the full industrial temperature range (−40°C to +95°C) and meets JEDEC DDR3-1600 (11-11-11) timing specifications.

Does W631GG6KB12I TR require an external ZQ reference resistor, and what value is specified?

Yes, W631GG6KB12I TR requires a 240 Ω ±1 % external precision resistor connected between the ZQ pin and ground. This resistor serves as the calibration reference for both output driver impedance (RTT_PU/RTT_PD) and on-die termination (ODT) settings, ensuring consistent signal integrity across voltage and temperature variations per JEDEC specification.

How does the asynchronous RESET# pin function in W631GG6KB12I TR during power-up?

The asynchronous RESET# pin in W631GG6KB12I TR initiates the power-up initialization sequence independently of clock stability. When asserted low after VDD/VDDQ reach regulation, it resets internal state machines and triggers the mandatory 200 µs delay before issuing the ZQ calibration command - enabling reliable boot in systems with slow-ramping or noisy power supplies.

Can W631GG6KB12I TR operate in Partial Array Self-Refresh (PASR) mode, and how is it configured?

Yes, W631GG6KB12I TR supports PASR to reduce self-refresh current by refreshing only selected banks. It is configured via MR2 bits A1–A0 (PASR[1:0]), with options for ¼, ½, or full-array refresh. Activation requires issuing a PRECHARGE ALL command followed by MRS to MR2, and is especially valuable in battery-backed industrial applications where power budget is constrained.

What is the purpose of the Multi-Purpose Register (MPR) in W631GG6KB12I TR, and how is it accessed?

The MPR in W631GG6KB12I TR provides a predefined 128-bit calibration pattern (0x00000000) used for system-level timing validation. It is accessed by setting MR3 A0 = 1, then issuing a READ command to address 0. Unlike normal reads, MPR readout does not require row activation and avoids disturbing stored data - making it ideal for runtime signal integrity verification.