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Winbond Electronics Corporation W631GG6KB-12 TR
- Part No.:
- W631GG6KB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-TFBGA
- Datasheet:
-
W631GG6KB-12 TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 96WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,285
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Product details
Overview
W631GG6KB-12 TR from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1600 (11-11-11) speed grade with CAS Latency 6–11, CWL 5–8, and 96-ball WBGA (9×13 mm²) package. It operates at 1.5 V ±0.075 V, features on-die termination (ODT), ZQ calibration, and asynchronous RESET# for power-up initialization - deployed in embedded computing and industrial control systems requiring reliable high-bandwidth memory.
For engineers reviewing the W631GG6KB-12 TR datasheet, W631GG6KB-12 TR pinout, W631GG6KB-12 TR application, or W631GG6KB-12 TR equivalent, key selection considerations include supported CL/CWL combinations, industrial temperature range (0°C to 95°C), SSTL_15 interface compliance, and DDR3-1600 timing validation under burst read/write and self-refresh conditions.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL-aligned DQ/DQS timing ensures precise source-synchronous data capture, while programmable additive latency (AL = 0, CL−1, CL−2) optimizes command bus efficiency during posted CAS operations.
The device supports dynamic ODT (Rtt_WR), multi-purpose register (MPR)-assisted system calibration, write leveling for timing margin optimization, and partial array self-refresh (PASR) to reduce power in idle bank subsets. All control/address inputs are sampled at the CK/CK# differential crossing point, and I/Os comply with SSTL_15 voltage thresholds.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | DDR3-1600: 1600 MT/s (800 MHz clock, tCK = 1.25 ns min) |
| CAS Latency (CL) | 6, 7, 8, 9, 10, 11 - determines minimum tAA (13.75 ns min at CL=11) |
| CAS Write Latency (CWL) | 5–8 - sets write latency WL = AL + CWL; CWL=7 required for CL=10 |
| Supply Voltage | VDD/VDDQ = 1.5 V ±0.075 V - strict tolerance mandates stable low-noise regulation |
| Operating Temperature | 0°C ≤ TCASE ≤ 95°C - validated for industrial ambient without derating |
| Package | WBGA-96 (9×13 mm², RoHS-compliant, lead-free) |
| Interface Standard | SSTL_15 - requires matched 15 Ω driver impedance and 34 Ω ODT termination |
Pinout & Package
W631GG6KB-12 TR uses a 96-ball fine-pitch WBGA package (9 mm × 13 mm, 0.8 mm ball pitch) with perimeter-only ball layout and no center thermal pad. Ball assignment follows JEDEC-standard DDR3 SDRAM pinout, including dedicated DQS/DQS# pairs per byte lane, separate VDDQ/VSSQ for I/O power integrity, and dual reference voltage pins (VREFCA for commands, VREFDQ for data).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Samples all address/control on rising CK/falling CK# crossing; defines tCK period and timing reference |
| DQS / DQS# | Differential data strobe (bidirectional) | Source-synchronous edge-aligned with read data, center-aligned with write data; enables write leveling |
| RESET# | Asynchronous active-low reset | Triggers power-up initialization sequence; must be held low ≥200 ns after VDD/VDDQ stabilization |
| ODT | On-die termination control | Dynamic ODT activation via MR1/A1–A0; selects Rtt_NOM = 75/150/∞ Ω for DQ/DQS lines during writes |
| ZQ | Calibration reference terminal | Connects to 240 Ω ±1 % external resistor to ground; calibrates output driver strength and ODT values |
| VREFCA / VREFDQ | Reference voltage inputs | VREFCA = 0.5×VDD for command/address; VREFDQ = 0.5×VDDQ for data - must be stable before CKE assertion |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL=5–8 per frequency bin; enables precise write timing alignment independent of CL |
| Multi-Purpose Register (MPR) | Reads predefined calibration bit pattern (0x00000000) via DQ[7:0]; used for system-level timing margin verification |
| Write Leveling | Adjusts DQS launch delay relative to CK to compensate for board skew; required before normal operation |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor; corrects VDD/VDDQ and temperature drift in driver/ODT impedance |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks; cuts IDD6 from 14 mA to ~7 mA when 4 of 8 banks idle |
| Dynamic ODT (Rtt_WR) | Enables ODT during write bursts only; improves signal integrity on shared DQ bus without affecting read termination |
Applications
| Industrial HMI Controller | Network Edge Router |
|---|---|
Use Scenario: Real-time display rendering and touch response handling in factory-floor HMIs operating continuously at 70°C ambient. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-A9 SoC; provides burst-accessed frame buffers and application code storage. Use Value: DDR3-1600 bandwidth sustains 1080p UI refresh at 60 Hz; PASR reduces self-refresh power by 50% during display idle periods. |
Use Scenario: Packet buffering and forwarding table storage in fanless Layer 3 switches deployed in telecom cabinets. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by multiple traffic engines; supports simultaneous read/write via bank interleaving. Use Value: Eight independent banks enable >90% utilization under mixed traffic loads; dynamic ODT suppresses write-induced crosstalk on dense PCB layouts. |
| Medical Imaging Module | Automated Test Equipment (ATE) |
Use Scenario: On-board image reconstruction pipeline in portable ultrasound units requiring deterministic latency and EMI resilience. IC Role / Device Role / Timing Role: High-integrity frame store synchronized to FPGA-based processing engine; operates under strict jitter-controlled CK/CK#. Use Value: DLL-aligned DQ/DQS ensures <±50 ps data-eye centering; SSTL_15 interface meets IEC 60601-1 EMC immunity requirements. |
Use Scenario: Pattern memory for high-speed digital I/O channel calibration in semiconductor ATE platforms running 24/7. IC Role / Device Role / Timing Role: Storage for multi-gigabit test vectors; accessed via high-frequency parallel bus with tight setup/hold margins. Use Value: Write leveling and MPR calibration validate timing margins across 96-ball interconnect; -12 speed grade guarantees tAA ≤13.75 ns at 800 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16JT-125K | 1 G-bit DDR3L (1.35 V), same 96-ball FBGA, CL=11/CWL=7 at 800 MHz; lower IDD0 (105 mA vs 115 mA) | Requires DDR3L-compatible power delivery; not rated for 95°C case temperature | Select if system uses DDR3L voltage scaling and operates ≤85°C ambient. |
| IS43TR16128B-125KBL | 1 G-bit DDR3, identical 96-ball WBGA, CL=11/CWL=7 at 800 MHz; supports extended temp up to 105°C (12J variant) | Includes enhanced PASR modes and optional 1.25 V VDDQ option; wider ODT range (60–120 Ω) | Prefer for designs needing >95°C operation or tighter ODT tuning for high-speed routing. |
Compared with W631GG6KB-12 TR, MT41K128M16JT-125K reduces active power but lacks 95°C rating, while IS43TR16128B-125KBL extends temperature range and ODT flexibility at the cost of higher IDD6 in self-refresh.
Availability
W631GG6KB-12 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging modules, and automated test equipment requiring stable component supply across extended temperature and long-lifecycle programs.
Supply support for W631GG6KB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W631GG6KB-12 TR belongs to Winbond's DDR3 SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant performance with robust initialization and power management.
FAQ
What is the maximum operating frequency supported by W631GG6KB-12 TR?
W631GG6KB-12 TR supports DDR3-1600 operation at 800 MHz clock frequency (1600 MT/s data rate), with tCK(AVG) minimum of 1.25 ns. This is validated for CL=11/CWL=7 timing under 0°C to 95°C case temperature, per JEDEC JESD79-3F specification and Winbond's A10 revision datasheet.
Does W631GG6KB-12 TR require external termination resistors?
No, W631GG6KB-12 TR integrates programmable on-die termination (ODT) for DQ, DQS, and DM signals, eliminating need for external parallel resistors. External 240 Ω ±1 % ZQ resistor is required solely for calibration - not for signal termination - and connects between ZQ ball and ground.
How does the RESET# pin function during power-up of W631GG6KB-12 TR?
The RESET# pin on W631GG6KB-12 TR must be held low for ≥200 ns after VDD and VDDQ reach 90% of nominal voltage. This initiates mandatory power-up initialization, including ZQ calibration and mode register loading. Failure to assert RESET# correctly prevents reliable entry into operational state.
Can W631GG6KB-12 TR operate in self-refresh mode at 95°C case temperature?
Yes, W631GG6KB-12 TR is qualified for self-refresh operation up to 95°C case temperature. At TCASE >85°C, tREFI must be halved to 3.9 µS (double refresh rate), achieved either via Auto Self-Refresh (ASR) mode (MR2[7:6]=0b10) or Manual Self-Refresh with extended temperature capability.
What ball configuration does W631GG6KB-12 TR use, and is it JEDEC-compliant?
W631GG6KB-12 TR uses a 96-ball WBGA package (9×13 mm², 0.8 mm pitch) with JEDEC-standard DDR3 SDRAM ballout: CK/CK#, CKE, CS#, RAS#, CAS#, WE#, BA[2:0], A[12:0], DQ[15:0], DQS/DQS#, DM[1:0], VDD/VDDQ/VSS/VSSQ, VREFCA/VREFDQ, ZQ, ODT, and RESET#. Pinout matches JESD79-3F Annex A.
W631GG6KB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 85°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-WBGA (9x13)
W631GG6KB-12 TR FAQ
1.How can I place an order for W631GG6KB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG6KB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG6KB-12 TR reliable?
The price and inventory of W631GG6KB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG6KB-12 TR is usually 5 days.
3.What payment methods are accepted for W631GG6KB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG6KB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG6KB-12 TR?
W631GG6KB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG6KB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG6KB-12 TR?
For technical support, including W631GG6KB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG6KB-12 TR requirements.
6.How does Aetrix verify that W631GG6KB-12 TR is sourced from the original manufacturer or authorized distributors?
All W631GG6KB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG6KB-12 TR meets industry standards.
7.What is the process for return or replacement of W631GG6KB-12 TR?
All W631GG6KB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG6KB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG6KB-12 TR part is unused and in its original packaging.
Return procedure for W631GG6KB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG6KB-12 TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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