Winbond Electronics Corporation W631GG6KB-15

Overview

W631GG6KB-15 from Winbond is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, compliant with JEDEC DDR3-1333 (9-9-9) timing, operating at 667 MHz clock frequency with 1.5 V supply, and packaged in 96-ball WBGA (9×13 mm²). It supports CAS Latency 6/8/9/10, programmable CWL, on-die termination (ODT), ZQ calibration, and asynchronous RESET#-used in embedded computing, industrial controllers, and network edge devices requiring cost-optimized, temperature-stable memory.

For engineers reviewing the W631GG6KB-15 datasheet, W631GG6KB-15 pinout, W631GG6KB-15 application, or W631GG6KB-15 equivalent, key selection considerations include DDR3-1333 speed bin compliance, industrial-grade 0°C to 95°C operation, 96-ball WBGA mechanical compatibility, and support for PASR, ASR, and write leveling for signal integrity tuning in high-density PCB layouts.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# and DQS/DQS# interfaces synchronized to SSTL_15 I/O standards, and DLL-based alignment of data strobes to clock edges. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and bi-directional DQS center-aligned on writes and edge-aligned on reads.

Functional features include programmable mode registers (MR0–MR3) for CAS Latency, CWL, ODT RTT values, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), auto self-refresh (ASR), and multi-purpose register (MPR) readout for system-level timing calibration-enabling precise write leveling and impedance matching without external test equipment.

Key Specifications

Pinout & Package

W631GG6KB-15 uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package with 0.8 mm ball pitch, 9×13 mm body size, and RoHS-compliant lead-free finish. Pin assignments follow JEDEC-standard DDR3 ballout for 16-bit x8-bank configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16JT-125:K and IS43TR16128B-15KBL, W631GG6KB-15 uniquely delivers ASR and PASR within the DDR3-1333/95°C envelope - enabling autonomous thermal adaptation and 40% lower self-refresh power - while maintaining full JEDEC-compliant pinout and timing for drop-in replacement in existing DDR3-1333 designs.

Availability

W631GG6KB-15 is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, and medical imaging terminals requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6KB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GG6KB-15 belongs to Winbond's W63 series of DDR3 SDRAMs, designed specifically for cost-sensitive, thermally demanding embedded applications where reliability across 0–95°C and feature-rich JEDEC compliance (ASR, PASR, write leveling) are mandatory.

FAQ

What DDR3 speed bin and timing parameters apply to W631GG6KB-15?

W631GG6KB-15 is rated for DDR3-1333 operation with 9-9-9 timing (tRCD/tRP/tRAS = 9 ns each at 667 MHz), supporting CAS Latency 6, 8, 9, and 10. Its maximum clock frequency is 667 MHz (tCK = 1.5 ns min), and it guarantees full JEDEC AC/DC specifications across 0°C to 95°C case temperature. The -15 suffix explicitly denotes this speed and temperature grade.

Does W631GG6KB-15 support Auto Self-Refresh (ASR) and Partial Array Self-Refresh (PASR)?

Yes, W631GG6KB-15 supports both ASR and PASR. ASR (enabled via MR2[7:6] = 10b or 11b) automatically triggers self-refresh when case temperature exceeds 85°C. PASR (configured via MR2[5:3]) allows selective refresh of 1/2/1/4/1/8 of memory array, reducing self-refresh current by up to 50% - confirmed in Section 8.3.3.1 and Table 4 of the datasheet.

What package type and ball count does W631GG6KB-15 use?

W631GG6KB-15 uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. This matches JEDEC MO-270AC standard for DDR3 SDRAMs and is mechanically identical to other 1 Gbit DDR3 parts in the same density class - verified in Section 11 "Package Specification" and Ball Configuration diagram (Page 8).

How is ZQ calibration implemented on W631GG6KB-15?

W631GG6KB-15 performs ZQ calibration using an external 240 Ω ±1% resistor connected to the ZQ pin (Ball H1). The device executes ZQCL (ZQ Calibration Long) after power-up and ZQCS (ZQ Calibration Short) periodically during operation to adjust output driver strength and ODT resistance. Calibration accuracy is ±10% over voltage/temperature - detailed in Sections 8.18 and 10.9.

Is W631GG6KB-15 pin-compatible with other Winbond DDR3 SDRAMs like W631GG6KB-12 or W631GG6KB-11?

Yes, all W631GG6KB-x variants share identical 96-ball WBGA pinout, electrical interface, and command set. Differences are limited to speed bin (DDR3-1333 vs. DDR3-1600 vs. DDR3-1866), supported CAS Latency/CWL combinations, and temperature grading - confirmed in Sections 3 (Order Information) and 5 (Ball Configuration). No PCB changes are required when upgrading within the W631GG6KB family.