My Inquiry
My Account
Winbond Electronics Corporation W631GG6KB15I
- Part No.:
- W631GG6KB15I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-TFBGA
- Datasheet:
-
W631GG6KB15I.pdf
- Description:
- IC DRAM 1GBIT PAR 96WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,340
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W631GG6KB15I from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1333 (9-9-9) speed grade with CAS Latency 9, CWL 7, and tCK(AVG) = 1.5 ns. It operates across -40°C to +95°C, features on-die termination (ODT), ZQ calibration, and asynchronous RESET# for industrial embedded systems requiring reliable memory in extended temperature environments.
For engineers reviewing the W631GG6KB15I datasheet, W631GG6KB15I pinout, W631GG6KB15I application, or W631GG6KB15I equivalent, key selection considerations include its industrial temperature range, DDR3-1333 timing compliance, 96-ball WBGA package, SSTL_15 interface compatibility, and support for PASR, ASR, and write leveling for system-level signal integrity.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its DLL aligns DQ/DQS transitions to CK/CK#, and it supports programmable additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency.
The device uses differential clock inputs (CK/CK#) and bidirectional differential strobes (DQS/DQS#), with all inputs sampled at the CK rising / CK# falling crossover point. It supports synchronous ODT, dynamic ODT (Rtt_WR), and ZQ calibration using an external 240 Ω resistor to ground for output driver and termination impedance tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8M words × 8 banks × 16 bits) |
| Data Rate | DDR3-1333: 1333 Mb/s/pin (667 MHz clock) |
| CAS Latency (CL) | 9 cycles - determines minimum read access latency under specified timing |
| CAS Write Latency (CWL) | 7 cycles - sets write-to-strobe alignment for accurate data capture |
| Operating Temperature | -40°C to +95°C case temperature - validated for industrial-grade thermal reliability |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - matches JEDEC SSTL_15 interface requirements |
| Package | 96-ball WBGA (9 mm × 13 mm, RoHS-compliant, lead-free) |
| Refresh Interval | 7.8 µs at ≤85°C; 3.9 µs at 85–95°C - requires ASR or manual self-refresh above 85°C |
Pinout & Package
W631GG6KB15I is packaged in a 96-ball WBGA (9 mm × 13 mm) with 0.8 mm ball pitch, RoHS-compliant and lead-free. Ball layout follows JEDEC-standard DDR3 SDRAM footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential Clock Input | Samples all address/control inputs at crossing point; defines timing reference for all operations |
| CKE | Clock Enable | Asynchronous control for power-down entry/exit and self-refresh activation |
| RESET# | Asynchronous Reset | Initiates power-up initialization sequence; resets internal state without power cycle |
| ODT | On-Die Termination Control | Enables/disables programmable termination resistances (Rtt_Nom, Rtt_WR) on DQ/DQS/DM lines |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω resistor to ground for factory-trimmed output driver and ODT impedance calibration |
| VREFCA / VREFDQ | Reference Voltage Inputs | Provide stable mid-supply references for command/address and data input receivers (SSTL_15) |
| DQS / DQS# | Differential Data Strobe | Source-synchronous strobe for read/write data; center-aligned on write, edge-aligned on read |
| DMU / DML | Data Mask (Upper/Lower) | Byte-wise write masking for 16-bit data bus - suppresses selected nibbles during write bursts |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | CWL = 7 at DDR3-1333 ensures precise DQS-to-data alignment for robust write capture |
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during writes only - improves signal integrity without affecting read paths |
| Write Leveling Support | Calibrates DQS-to-CK skew per byte lane via MPR-read pattern - essential for high-speed DDR3 timing closure |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - extends battery life in portable industrial devices |
| Auto Self Refresh (ASR) | Automatically doubles refresh rate above 85°C - eliminates host firmware intervention for thermal management |
| Posted CAS with Additive Latency | AL = 0, CL−1, or CL−2 allows pipelined command issuance - increases command bus utilization in burst-heavy workloads |
Applications
| Industrial HMI Controllers | Medical Imaging Edge Processors |
|---|---|
Use Scenario: Touchscreen-based human-machine interface running real-time Linux with graphics overlay and local data logging. IC Role / Device Role / Timing Role: Main system memory providing low-latency, deterministic access to GUI frame buffers and application code. Use Value: -40°C to +95°C operation ensures uninterrupted function in uncontrolled cabinet environments; DDR3-1333 bandwidth meets 720p display refresh and logging throughput. |
Use Scenario: Portable ultrasound or X-ray edge processor performing real-time image reconstruction and DICOM packet assembly. IC Role / Device Role / Timing Role: High-reliability working memory buffering raw sensor data and reconstructed frames before transmission. Use Value: PASR and ASR reduce power consumption during idle imaging phases while maintaining data integrity across wide ambient temperature swings. |
| Ruggedized Network Gateways | Smart Energy Metering Systems |
Use Scenario: DIN-rail mounted industrial gateway aggregating Modbus, CAN, and Ethernet traffic with local protocol translation and TLS encryption. IC Role / Device Role / Timing Role: System DRAM supporting multi-threaded packet processing, crypto acceleration, and secure boot verification. Use Value: Write leveling and ZQ calibration ensure signal integrity across long PCB traces in noisy factory-floor EMI environments. |
Use Scenario: ANSI C12.22-compliant smart meter with tamper detection, load profiling, and wireless mesh backhaul. IC Role / Device Role / Timing Role: Non-volatile-capable working memory for time-stamped energy samples and firmware update staging. Use Value: Industrial temperature rating and low IDD6 (14 mA self-refresh) enable battery-backed operation over 15+ year field lifetime without thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-15KBLI | Same density (1G-bit), 96-ball WBGA, DDR3-1333, -40°C to +95°C; differs in ODT configuration (RTT_Nom only) and lacks PASR | No partial array self-refresh - higher self-refresh current in battery-powered use cases | Select when ODT simplicity and vendor consolidation outweigh PASR/ASR benefits |
| MT41K128M16HA-125:E | Higher speed grade (DDR3L-1600), 1.35 V operation, same 96-ball FBGA; not pin-compatible due to different ball mapping and VREFDQ placement | Requires voltage rail redesign and layout revision; unsuitable for drop-in replacement | Consider only for new designs targeting lower power and higher bandwidth - not a functional substitute for W631GG6KB15I |
Compared with IS43TR16128B-15KBLI, W631GG6KB15I offers lower self-refresh current and advanced power management (PASR/ASR); compared with MT41K128M16HA-125:E, it maintains 1.5 V compatibility and proven industrial thermal stability without requiring board re-spin.
Availability
W631GG6KB15I is available at Aetrix Electronics and suitable for industrial HMI controllers, medical imaging edge processors, and ruggedized network gateways requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GG6KB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
W631GG6KB15I belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, low-power self-refresh, and JEDEC-compliant signal integrity in harsh environments.
FAQ
What is the maximum operating frequency of the W631GG6KB15I?
The W631GG6KB15I is rated for DDR3-1333 operation, corresponding to a maximum clock frequency of 667 MHz (1333 MT/s data rate). Its tCK(AVG) specification is 1.5 ns minimum for CL=9/CWL=7 operation, and it supports full JEDEC AC/DC parameters across -40°C to +95°C case temperature. Frequency scaling beyond this bin is not guaranteed or characterized.
Does the W631GG6KB15I support on-die termination (ODT)?
Yes, the W631GG6KB15I supports both synchronous and dynamic ODT modes. It provides programmable termination impedances (Rtt_Nom and Rtt_WR) for DQ, DQS/DQS#, and DM signals via mode registers MR1 and MR2. Dynamic ODT (Rtt_WR) activates automatically during write operations to improve signal integrity without affecting read paths.
What is the purpose of the ZQ pin on the W631GG6KB15I?
The ZQ pin on the W631GG6KB15I connects to an external 240 Ω precision resistor to ground and enables factory-trimmed calibration of output driver strength and on-die termination (ODT) impedances. This calibration compensates for process, voltage, and temperature variations, ensuring consistent signal integrity across operating conditions.
How does the W631GG6KB15I handle refresh at elevated temperatures?
Above 85°C case temperature, the W631GG6KB15I requires either Auto Self Refresh (ASR) mode (enabled via MR2 bit A6) or manual self-refresh with extended temperature capability (MR2 A6=0, A7=1). In both cases, the refresh interval must be halved to 3.9 µs (vs. 7.8 µs at ≤85°C), doubling the refresh command rate to maintain data retention reliability.
Is the W631GG6KB15I pin-compatible with other DDR3 SDRAMs in the same package?
No - the W631GG6KB15I uses a JEDEC-standard 96-ball WBGA layout, but pin assignments (e.g., VREFCA/VREFDQ placement, RESET# location, and ODT functionality) are specific to Winbond's implementation. Direct substitution with other vendors' 96-ball DDR3 parts requires validation of ball mapping, timing behavior, and mode register compatibility; it is not guaranteed.
W631GG6KB15I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-WBGA (9x13)
W631GG6KB15I FAQ
1.How can I place an order for W631GG6KB15I through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG6KB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG6KB15I reliable?
The price and inventory of W631GG6KB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG6KB15I is usually 5 days.
3.What payment methods are accepted for W631GG6KB15I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG6KB15I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG6KB15I?
W631GG6KB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG6KB15I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG6KB15I?
For technical support, including W631GG6KB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG6KB15I requirements.
6.How does Aetrix verify that W631GG6KB15I is sourced from the original manufacturer or authorized distributors?
All W631GG6KB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG6KB15I meets industry standards.
7.What is the process for return or replacement of W631GG6KB15I?
All W631GG6KB15I units undergo pre-shipment inspection (PSI). If there is an issue with W631GG6KB15I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG6KB15I part is unused and in its original packaging.
Return procedure for W631GG6KB15I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG6KB15I Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
