Winbond Electronics Corporation W631GG6KB15I TR

Overview

W631GG6KB15I TR from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3-1333 (9-9-9) operation at 667 MHz clock frequency with CAS Latency 9, industrial temperature range (–40°C to +95°C), and 96-ball WBGA package. It serves as main system memory in embedded controllers, networking processors, and industrial HMIs requiring reliable high-density DRAM with ZQ calibration and dynamic ODT.

For engineers reviewing the W631GG6KB15I TR datasheet, W631GG6KB15I TR pinout, W631GG6KB15I TR application, or W631GG6KB15I TR equivalent, key selection criteria include its –40°C to +95°C industrial rating, DDR3-1333 timing compliance (tRCD/tRP = 9 ns), 1.5 V ± 0.075 V supply, SSTL_15 interface, and support for write leveling and multi-purpose register (MPR) calibration.

Technical Context

This DDR3 SDRAM implements an 8-bank architecture with 8-bit prefetch, synchronous differential clocking (CK/CK#), and source-synchronous DQS/DQS# strobes aligned to data edges. It supports programmable CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

Functional features include asynchronous RESET#, on-die termination (ODT) with RTT_NOM/RTT_WR settings, ZQ calibration using external 240 Ω resistor, partial array self-refresh (PASR), auto self-refresh (ASR), and bi-directional DM masking. All control inputs are sampled at CK/CK# crossing points, and I/Os meet JEDEC DDR3L-1333 AC/DC specifications.

Key Specifications

Pinout & Package

W631GG6KB15I TR uses a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. The package supports fine-pitch routing and thermal performance suitable for industrial PCB stacks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W631GG6KB15I TR, the Micron part requires 1.35 V operation and offers higher speed headroom but demands DDR3L-specific power design, while the ISSI part matches voltage, speed, and temperature exactly but may differ in ZQ calibration convergence time and MPR pattern behavior.

Availability

W631GG6KB15I TR is available at Aetrix Electronics and suitable for industrial HMI, networking infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W631GG6KB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and computing markets.

The W631GG6KB series is part of Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, JEDEC compliance, and robust signal integrity features like write leveling and dynamic ODT.

FAQ

What is the maximum clock frequency supported by the W631GG6KB15I TR?

The W631GG6KB15I TR supports a maximum clock frequency of 667 MHz, corresponding to DDR3-1333 data rates (1333 MT/s). This is validated under industrial temperature conditions (–40°C to +95°C) with tRCD/tRP = 9 ns and CL = 9. The device does not support higher-speed bins such as DDR3-1600 or DDR3-1866; those require different speed-grade suffixes (e.g., -12 or -11).

Does the W631GG6KB15I TR support ZQ calibration, and what external component is required?

Yes, the W631GG6KB15I TR supports ZQ calibration for output driver and on-die termination impedance tuning. It requires a single 240 Ω ±1 % external resistor connected between the ZQ ball and ground. This resistor must be placed within 5 mm of the ZQ pad with minimal trace inductance to ensure accurate calibration across voltage and temperature variations.

What are the supported CAS Latency and CAS Write Latency settings for W631GG6KB15I TR?

The W631GG6KB15I TR supports CAS Latency (CL) values of 6, 7, 8, 9, 10, and optionally 11 depending on configuration, with CL = 9 being the default for DDR3-1333 operation. CAS Write Latency (CWL) is programmable to 5, 6, or 7, where CWL = 5 is used with CL = 6, CWL = 6 with CL = 8/10, and CWL = 7 with CL = 9/11 - all defined in MR2 and MR3 mode registers.

How does the W631GG6KB15I TR handle refresh in extended temperature ranges above 85°C?

At case temperatures above 85°C up to +95°C, the W631GG6KB15I TR requires doubling the auto-refresh command rate to maintain tREFI = 3.9 µS (vs. 7.8 µS at ≤85°C). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 bit A6 = 1, or by using Manual Self-Refresh with Extended Temperature Range mode (MR2 A6 = 0, A7 = 1), both of which are fully supported in the W631GG6KB15I TR.

Is the W631GG6KB15I TR pin-compatible with other Winbond DDR3 SDRAMs in the same package?

Yes, the W631GG6KB15I TR shares identical 96-ball WBGA pinout and ball assignment with other members of the W631GG6KB family (e.g., W631GG6KB12I, W631GG6KB11I), including CK/CK#, DQS/DQS#, RESET#, ZQ, and ODT signals. This allows direct substitution within the same speed grade group when board layout accommodates thermal and power requirements.