Winbond Electronics Corporation W631GG6MB-09

Overview

W631GG6MB-09 from Winbond Electronics is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-2133 (14-14-14) operation at 1066 MHz clock frequency with CAS Latency 14, VDD/VDDQ = 1.5 V ± 0.075 V, and packaged in a 96-ball VFBGA (7.5 × 13 mm, 1.0 mm height). It serves as main memory in embedded computing, industrial control, and networking equipment requiring high-bandwidth, low-latency DRAM with extended temperature support up to 95°C.

For engineers reviewing the W631GG6MB-09 datasheet, W631GG6MB-09 pinout, W631GG6MB-09 application, or W631GG6MB-09 equivalent, key selection considerations include its DDR3-2133 speed bin, CL14 timing, SSTL_15 interface compliance, on-die termination (ODT), ZQ calibration capability, and support for write leveling and multi-purpose register (MPR)-based system calibration.

Technical Context

This device implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS-to-clock timing, and source-synchronous differential strobe (DQS/DQS#) I/O. It supports programmable CAS Write Latency (CWL = 10), additive latency (AL = 0, CL−1, CL−2), and posted CAS for optimized command bus efficiency.

Functional features include asynchronous RESET# for power-up initialization, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), auto self-refresh (ASR), and bi-directional DQS edge/center alignment for read/write data capture. All commands are latched on CK rising/CK# falling crosspoint, and data masks (DM) enable byte-level write masking.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum height. Ball layout conforms to JEDEC MO-273 standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:E and IS43TR16128B-125KBL, the W631GG6MB-09 delivers 33% higher bandwidth and full DDR3-2133 feature set including write leveling and MPR, making it the only option for systems targeting 1066 MHz clock domains with JEDEC-compliant initialization.

Availability

W631GG6MB-09 is available at Aetrix Electronics and suitable for industrial HMI systems, network switch buffers, medical imaging controllers, and video surveillance NVRs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6MB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM, with ISO 9001 and IATF 16949 certified manufacturing.

The W631GG6MB-09 belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded applications demanding reliability, extended temperature operation, and JEDEC-compliant high-speed interface behavior.

FAQ

What is the maximum clock frequency supported by the W631GG6MB-09?

The W631GG6MB-09 supports a maximum clock frequency of 1066 MHz, enabling DDR3-2133 operation at 2133 MT/s. This is validated under specified conditions: VDD/VDDQ = 1.5 V ± 0.075 V, 0°C ≤ TCASE ≤ 95°C, and CL = 14. The device achieves tAA = 13.09 ns and tRCD = 13.09 ns at this speed, meeting JEDEC DDR3-2133 (14-14-14) timing requirements. Exceeding 1066 MHz violates AC specifications and may cause data corruption.

Does the W631GG6MB-09 support write leveling, and why is it required?

Yes, the W631GG6MB-09 supports write leveling per JEDEC DDR3 specification. This feature allows the memory controller to adjust DQS input delay per byte lane to compensate for PCB trace length mismatch. It is required before reliable DDR3-2133 operation because at 1066 MHz clock, even 50 ps skew exceeds setup/hold margins. The W631GG6MB-09 implements the full write leveling protocol including entry, training, and exit sequences defined in section 8.9 of its datasheet.

What is the purpose of the Multi-Purpose Register (MPR) in the W631GG6MB-09?

The MPR in the W631GG6MB-09 provides a predefined 128-bit read pattern (0x00000000 repeated) accessible via standard READ commands when MPR mode is enabled. Its primary use is system-level timing margin verification - allowing the controller to sample DQ eye diagrams without disturbing actual memory contents. This capability is essential for validating signal integrity during DDR3-2133 bring-up and is explicitly supported in the W631GG6MB-09's functional description (section 8.10).

How does the W631GG6MB-09 handle temperature-dependent refresh?

The W631GG6MB-09 implements temperature-compensated refresh via Auto Self-Refresh (ASR) and manual extended-range self-refresh modes. At 0–85°C, tREFI = 7.8 µS; above 85°C (up to 95°C), it requires tREFI = 3.9 µS - achieved by doubling refresh command frequency. This is enabled by setting MR2[A6]=1 (ASR) or MR2[A6]=0 & MR2[A7]=1 (manual extended mode). The W631GG6MB-09 datasheet specifies these configurations in section 8.3.3.3 and Table 4.

Is the W631GG6MB-09 pin-compatible with other Winbond DDR3 SDRAMs like the W631GG6KB series?

No, the W631GG6MB-09 is not pin-compatible with the W631GG6KB series. While both are 1 Gbit DDR3 SDRAMs in 96-ball VFBGA packages, the W631GG6KB uses a different ball map (e.g., different placement of VDDQ, ODT, and ZQ pins) and supports only DDR3-1600. Pin compatibility is not claimed in Winbond's order information or package drawings; substituting W631GG6KB for W631GG6MB-09 would require PCB redesign due to incompatible signal routing and power distribution.