Winbond Electronics Corporation W631GG6MB-11

Overview

W631GG6MB-11 from Winbond Electronics is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency options of 5–13 and programmable CAS Write Latency (CWL) of 5–7. It features on-die termination (ODT), ZQ calibration, asynchronous RESET#, and operates across 0°C to 95°C case temperature for industrial computing and embedded systems requiring high-bandwidth memory.

For engineers reviewing the W631GG6MB-11 datasheet, W631GG6MB-11 pinout, W631GG6MB-11 application, or W631GG6MB-11 equivalent, key selection considerations include its DDR3-1866 timing compliance, VFBGA-96 package with SSTL_15 interface, support for dynamic ODT and write leveling, and compatibility with JEDEC-standard DDR3 controllers in networking, storage, and multimedia SoC platforms.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3 architecture with differential CK/CK# and DQS/DQS# signaling, DLL-aligned data strobes, and posted CAS with additive latency (AL = 0, CL−1, CL−2). It supports auto-precharge, burst lengths of 8 (BL8) or 4 (BC4), and programmable read burst ordering (interleaved or nibble sequential).

Power management includes precharged and active power-down modes, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR). Calibration features include ZQ calibration for output driver and ODT impedance tuning, plus write leveling and multi-purpose register (MPR) support for system-level timing alignment.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch, RoHS-compliant and lead-free. Ball layout follows JEDEC MO-271AC standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K256M16HA-125:A and IS43TR16128B-125KBL, W631GG6MB-11 delivers higher bandwidth (1866 vs. 1600 MT/s), broader CL/CWL flexibility, and industrial-temperature support - making it optimal for performance-critical, thermally demanding embedded systems requiring JEDEC-compliant DDR3-1866 timing.

Availability

W631GG6MB-11 is available at Aetrix Electronics and suitable for networking equipment, industrial HMI systems, video surveillance DVR/NVR, and medical imaging edge devices requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1866 performance.

Supply support for W631GG6MB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, robust power management, and JEDEC-compliant high-speed interface reliability.

FAQ

What is the maximum clock frequency supported by W631GG6MB-11?

W631GG6MB-11 supports a maximum clock frequency of 933 MHz, enabling DDR3-1866 operation (1866 MT/s). This is validated under JEDEC conditions with CL=13 and tCK(AVG) ≤ 1.07 ns. The device achieves this while maintaining tRCD/tRP/tRC timing parameters at 13.91 ns minimum, ensuring compatibility with high-performance DDR3 controllers in networking and multimedia SoCs.

Does W631GG6MB-11 support write leveling and how is it implemented?

Yes, W631GG6MB-11 supports write leveling through dedicated command sequences and DQS-DQS# phase adjustment logic. During write leveling mode, the DRAM returns a known pattern on DQ pins synchronized to DQS edges, allowing the memory controller to calibrate DQS-to-CK delay per byte lane. This feature is essential for achieving timing closure at 933 MHz clock rates and is documented in Section 8.9 of the W631GG6MB-11 datasheet.

What are the supported CAS Latency (CL) and CAS Write Latency (CWL) values for W631GG6MB-11?

W631GG6MB-11 supports CAS Latency (CL) values of 5, 6, 8, 10, and 13, and CAS Write Latency (CWL) values of 5, 6, and 7. These are programmable via Mode Registers MR0 and MR2 respectively. CL and CWL combinations must satisfy WL = AL + CWL and RL = AL + CL relationships, with additive latency (AL) configurable as 0, CL−1, or CL−2 to optimize command bus efficiency.

How does the ZQ calibration function work on W631GG6MB-11?

W631GG6MB-11 uses its ZQ pin to connect to a 240 Ω ±1 % external resistor to VSS, enabling on-chip calibration of both output driver impedance and on-die termination (ODT) resistors. A ZQ calibration command triggers internal current sources to match the external reference, adjusting driver strength and RTT values to maintain 34 Ω output and 60/120/240 Ω ODT accuracy across voltage and temperature variations - critical for signal integrity at DDR3-1866 speeds.

Is W631GG6MB-11 compatible with standard DDR3 controllers and what interface standard does it use?

Yes, W631GG6MB-11 is fully JEDEC-compliant with standard DDR3 controllers such as those in NXP i.MX6, TI Sitara AM57x, and Intel Atom E3900 families. It uses the SSTL_15 interface standard with differential CK/CK# and DQS/DQS# signaling, supports all mandatory DDR3 commands (ACT, READ, WRITE, PRE, REF, ZQCAL), and meets AC timing requirements for DDR3-1866 (13-13-13) operation as defined in JESD79-3F.