Winbond Electronics Corporation W631GG6MB11I

Overview

W631GG6MB11I from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, programmable CWL=7, and industrial temperature range (−40°C to +95°C). It features on-die termination (ODT), ZQ calibration, write leveling, multi-purpose register (MPR), and asynchronous RESET# for robust memory subsystems in networking and industrial control.

For engineers reviewing the W631GG6MB11I datasheet, W631GG6MB11I pinout, W631GG6MB11I application, or W631GG6MB11I equivalent, this page delivers verified timing parameters, ball configuration, ODT configuration options, thermal operating limits, and JEDEC-compliant DDR3-1866 functional behavior - all specific to the W631GG6MB11I industrial-grade variant.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3 architecture synchronized to differential CK/CK# inputs and source-synchronous DQS/DQS# strobes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization and precise read/write timing alignment via DLL-controlled DQ–DQS skew compensation.

W631GG6MB11I provides full DDR3-1866 compliance including dynamic ODT (Rtt_WR), partial array self-refresh (PASR), auto self-refresh (ASR), and ZQ calibration using a 240 Ω external reference resistor. Its SSTL_15 I/O interface operates at VDD = VDDQ = 1.5 V ± 0.075 V with bi-directional DQS edge/center alignment per JEDEC JESD79-3F.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. Ball layout follows JEDEC MO-245AC standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16HA-125:E and IS43TR16128B-125KBL, W631GG6MB11I uniquely delivers DDR3-1866 performance with full JEDEC-compliant write leveling, MPR, and PASR in a single industrial-grade package - critical for high-bandwidth, thermally constrained embedded systems requiring runtime calibration and fine-grained power control.

Availability

W631GG6MB11I is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6MB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W631GG6MB11I belongs to Winbond's W631GG6MB DDR3 SDRAM product line, designed specifically for high-reliability embedded systems demanding industrial temperature operation, JEDEC-compliant DDR3-1866 performance, and advanced signal integrity features like write leveling and ZQ calibration.

FAQ

What is the maximum clock frequency supported by W631GG6MB11I?

W631GG6MB11I supports a maximum clock frequency of 933 MHz, enabling DDR3-1866 operation at 1866 MT/s. This is validated under industrial temperature conditions (−40°C to +95°C) with CL=13 and CWL=7, per JEDEC JESD79-3F specification and Winbond's published AC timing table for the -11I speed grade.

Does W631GG6MB11I support write leveling, and how is it enabled?

Yes, W631GG6MB11I supports hardware-assisted write leveling. It is enabled by setting MR3[A0] = 1 via mode register set (MRS) command. Once activated, the DRAM outputs a predefined pattern on DQ pins synchronized to DQS edges, allowing the memory controller to calibrate DQ-to-DQS timing offsets per byte lane - a feature confirmed in Section 8.9 of the W631GG6MB datasheet Revision A02.

What is the purpose of the ZQ pin on W631GG6MB11I, and what external component is required?

The ZQ pin on W631GG6MB11I serves as the reference node for factory and runtime calibration of output driver impedance and on-die termination (ODT) values. It must be connected to a precision 240 Ω ±1 % resistor tied to ground, as specified in Section 8.18 and Table 10.18.3 of the datasheet. This enables ZQ calibration to maintain ±10 % impedance accuracy across voltage and temperature variations.

Can W631GG6MB11I operate in self-refresh mode at +95°C, and what refresh adjustment is needed?

Yes, W631GG6MB11I supports self-refresh at +95°C, but requires doubled refresh rate: tREFI must be reduced from 7.8 µs to 3.9 µs. This is achieved either by enabling Auto Self-Refresh (ASR) via MR2[A6]=1 or by entering Manual Self-Refresh with Extended Temperature Range (MR2[A6]=0, MR2[A7]=1), as mandated in Note 4 of Section 4 (KEY PARAMETERS) of the datasheet.

What are the supported CAS Latency and CAS Write Latency settings for W631GG6MB11I at DDR3-1866 speed?

At DDR3-1866 speed, W631GG6MB11I supports CAS Latency (CL) = 13 as the primary setting (tAA min = 13.91 ns), with additional support for CL = 5, 6, 8, 10, and 13. CAS Write Latency (CWL) is fixed at 7 for DDR3-1866 operation, as defined in the "Supported CWL Settings" row of Section 4's KEY PARAMETERS table and confirmed in Section 8.3.3.2 (CWL programming).