Winbond Electronics Corporation W631GG6MB11I TR

Overview

W631GG6MB11I TR from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency, with industrial temperature range (–40°C to +95°C), VDD/VDDQ = 1.5 V ± 0.075 V, and SSTL_15 interface - deployed in embedded computing, network edge routers, and industrial HMIs requiring reliable high-bandwidth memory.

For engineers reviewing the W631GG6MB11I TR datasheet, W631GG6MB11I TR pinout, W631GG6MB11I TR application, or W631GG6MB11I TR equivalent, key selection considerations include CAS Latency support (CL = 5–13), programmable CWL (5–7), ZQ calibration capability, on-die termination (RTT_NOM/RTT_WR), and industrial-grade thermal reliability across full JEDEC AC/DC specs.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization during burst transfers.

Functional features include asynchronous RESET#, dynamic ODT for write termination, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and partial array self-refresh (PASR) to reduce power in idle bank subsets - all compliant with JEDEC DDR3 standard JESD79-3F.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free finish. Ball layout optimized for DDR3 routing constraints including adjacent VSS/VDD pairs and dedicated DQ/DQS groups.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W631GG6MB11I TR, IS43TR16128B-125KBL offers lower voltage operation but lacks industrial +95°C rating, while MT41K128M16HA-125:E provides AEC-Q200 qualification at DDR3-1600 speed - making W631GG6MB11I TR the optimal balance of industrial thermal range, DDR3-1866 performance, and cost-sensitive volume procurement.

Availability

W631GG6MB11I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, embedded vision controllers, and medical diagnostic terminals requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6MB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, JEDEC compliance, and long-term supply stability without feature obsolescence.

FAQ

What is the maximum operating frequency supported by W631GG6MB11I TR?

W631GG6MB11I TR supports DDR3-1866 operation with a maximum clock frequency (f_CK) of 933 MHz, corresponding to 1866 MT/s data rate. This is validated across the full industrial temperature range (–40°C to +95°C) and meets JEDEC JESD79-3F timing specifications for tRCD, tRP, and tAA at CL=13 and CWL=7.

Does W631GG6MB11I TR support on-die termination (ODT)?

Yes, W631GG6MB11I TR supports programmable on-die termination via mode registers MR1 and MR2. It offers RTT_NOM values of 60 Ω, 120 Ω, or 240 Ω for reads, and RTT_WR values of 60 Ω or 120 Ω for writes - eliminating need for external termination resistors and improving signal integrity on high-speed DDR3 buses.

What is the purpose of the ZQ pin on W631GG6MB11I TR?

The ZQ pin on W631GG6MB11I TR connects to a 240 Ω ±1% external reference resistor to ground and enables factory and runtime calibration of output driver impedance and ODT resistance. This ensures consistent 34 Ω drive strength and accurate termination across voltage and temperature variations - critical for maintaining signal integrity at 1866 MT/s.

Can W631GG6MB11I TR operate in self-refresh mode at its maximum temperature rating?

Yes, W631GG6MB11I TR supports normal temperature self-refresh (IDD6 ≤ 10 mA) across its full industrial range (–40°C to +95°C). At +95°C case temperature, Auto Self-Refresh (ASR) must be enabled (MR2 A6 = 1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0b, A7 = 1b) activated to maintain refresh interval compliance per JEDEC.

How does write leveling function in W631GG6MB11I TR?

W631GG6MB11I TR implements hardware-assisted write leveling where the memory controller issues a special MRS command to enter write leveling mode. The DRAM then outputs a known pattern on DQS, allowing the controller to adjust DQ launch timing relative to DQS edge - compensating for board-level skew and ensuring robust write setup/hold margins at 1866 MT/s.